SBIR Phase I: In-Situ Spectral Ellipsometry Feedback Control Instrument for Metal Organic Chemical Vapor Deposition (MOCVD) of Complex Oxides

这个小型企业创新研究（SBIR）一期项目为开发和实施金属有机化学气相沉积（MOCVD）复杂氧化物的原位反馈控制仪器奠定了基础。如果成功，该项目将产生实时的现场反馈监测，解决由复杂氧化物MOCVD工具沉积的实际膜的质量，用于工艺开发和生产。该计划特别关注用于非易失性铁电随机存取存储器（FRAM）制造的钛酸铅锆（PZT），但最终技术将适用于其他氧化物。该项目将开发一个实时的原位光谱椭偏薄膜分析工具，该工具可以反馈到过程控制中。具体来说，开发的技术将监测光学常数、厚度、成分和表面/界面形态。第一阶段将侧重于开发非原位样本数据库（根据物理测量校准）并改进工具设计。在第二阶段，一个薄膜分析装置将与现有的中试生产反应器相匹配。将实施该单元，完善数据库，开发反馈控制软件和硬件。第三阶段商业化将包括销售完整的氧化物MOCVD系统，该系统带有基于光谱椭偏仪的现场过程监视器，可以实时反馈沉积膜的质量控制。这将使基于复杂材料的设备（如非易失性存储器和红外探测器等）的高产量经济制造成为可能，其水平远高于目前的水平。

This Small Business Innovation Research (SBIR) Phase I project lays the foundation for developing and implementing an in-situ feedback control instrument for Metal Organic Chemical Vapor Deposition (MOCVD) of complex oxides. If successful, the project will result in real time in-situ feedback monitors addressing the quality of the actual film being deposited by a complex oxide MOCVD tool for process development and for production. The program is specifically focused on lead zirconium titanate (PZT) for non-volatile ferroelectric random access memory (FRAM) fabrication, but the resulting technology will be applicable to other oxides. This project will develop a real-time in-situ Spectral Ellipsometry film analysis tool that can feedback into process control. Specifically, the developed technology will monitor the optical constants, thickness, composition and surface/interface morphology. Phase I will focus on development of ex-situ sample-data libraries (calibrated to physical measurements) and refine the tool design. In Phase II, a film analysis unit will be mated to an existing pilot production reactor. The unit will be implemented, data libraries refined, and feedback control software and hardware developed. Phase III commercialization will consist of marketing complete oxide MOCVD systems with Spectral Ellipsometer based in-situ process monitors that enable real time feedback for quality control of deposited films. This will enable high yield economical manufacture of complex material based devices such as non-volatile memories and infrared detectors, among others, at levels far above those now possible.