SBIR Phase I: Development of Transparent Diodes

SBIR 第一阶段：透明二极管的开发

• 批准号: 9860239
• 负责人: Gary Tompa
• 金额: $ 10万
• 依托单位: NEI CORPORATION
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-01-01 至 1999-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9860239&HistoricalAwards=false
• 关键词: SBIR; Phase; Development; Transparent; Diodes

9860239 This Phase I Small Business Innovation Research Phase I project from Structured Materials Industries Inc., will show proof-of-principle that the firm can make transparent Diodes (p-type ZnO by, PE-MOCVD). Japanese researchres recently announced that they had succeeded in forming nitrogen doped room temperature p-type ZnO transparent and conductive thin films. Heretofore, transparent (wide bandgap) conductive oxides have almost exclusively been n-type. We have been highly successful in producing a variety of n-type highly conductive. highly luminescent and near epitaxial ZnO based films. If stable p-type transparent oxides can be repeatedly and economically reproduced then a great variety of new and enhanced ,wholly transparent device applications become available. Applications include: diodes, transistors, photovoltaics, sensors, p-type semiconductor contact layers, LEDs, OLEDs, among other devices. Based upon our capabilities, we are strongly positioned to investigate and develop p-type ZnO based films and devices. We propose, in Phase I, to perform a rapid proof-of-principle p-type ZnO materials deposition and characterization study, and for the first time, demonstrate a transparent oxide solid state p-n junction diode. The films and diodes will be characterized and material and device theory will be developed. In Phase II. SMI will focus on refining materials and processes and produce commercializable transparent p-n diode devices. Development of wide bandgap p-type transparent conductive oxides, combined with our existing n-type transparent conductive oxides could expand and generate several markets, including those of diode. transistors, wholly transparent displays. UV/blue emitters and detectors, and so on. Market leadership will result from materials capabilities.

9860239 这个第一阶段的小企业创新研究第一阶段项目从结构材料工业公司，将证明该公司可以制造透明二极管（p型ZnO，PE-MOCVD）的原理。日本研究人员最近宣布，他们已经成功地制备了氮掺杂的室温p型ZnO透明导电薄膜。因此，透明（宽带隙）导电氧化物几乎全部是n型的。我们已经非常成功地生产了各种n型高导电性。高发光和近外延ZnO基薄膜。如果稳定的p型透明氧化物可以重复和经济地再生，那么各种新的和增强的完全透明的器件应用变得可用。应用包括：二极管、晶体管、光电器件、传感器、p型半导体接触层、LED、OLED以及其他器件。基于我们的能力，我们在研究和开发p型ZnO基薄膜和器件方面处于有利地位。我们建议，在第一阶段，进行一个快速的原理证明p型ZnO材料的沉积和表征研究，并首次展示了一个透明的氧化物固态p-n结二极管。薄膜和二极管的特点和材料和器件的理论将得到发展。在第二阶段。SMI将专注于改进材料和工艺，并生产可商业化的透明p-n二极管器件。 宽带隙p型透明导电氧化物的开发，结合我们现有的n型透明导电氧化物，可以扩大和产生几个市场，包括二极管的市场。晶体管，全透明显示器。紫外/蓝光发射器和探测器等。市场领导地位将来自材料能力。