SBIR Phase I: Stable High Volume Cu Precursor Evaporation Module

SBIR 第一阶段：稳定的高容量铜前驱体蒸发模块

• 批准号: 0109525
• 负责人: Gary Tompa
• 金额: $ 10万
• 依托单位: STRUCTURED MATERIALS INDUSTRIES, INC.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-07-01 至 2001-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0109525&HistoricalAwards=false
• 关键词: SBIR; Phase; Stable; Volume; Cu

This Small Business Innovation Research (SBIR) Phase I project will address development of an advanced precursor evaporation module with a specific focus application to copper metalization. Rapid large area CVD is required for the copper seed layer or, preferably, for deposition of the full contact layer. CVD equipment manufacturers have responded to the deposition tool need; as have developers of the copper precursors to enable Cu CVD. However, the copper precursor of choice, Cupra Select TM (a liquid), has a relatively low vapor transport rate because of its low vapor pressure, compounded by a narrow temperature operating range (vapor pressure equals 0.4 Torr at 43 C and beyond ~ 45 C this precursor begins to decompose). Flash Evaporation is not a solution because of the low decomposition temperature. The limited vapor transport hinders high speed large area growth. This has led to the development of a multistep-multimachine copper metalization process (CVD seed layer followed by electrochemical deposition of the whole layer). This is tolerable but highly inefficient and hence costly. SMI proposes to create a patentable high volume liquid vaporization source. Our proposed source offers at minimum a 5 fold increase in available Cu vapor transport and is expected to allow CVD to replace the present two-step process. If successfully developed, SMI's source will be made available commercially. This effort will help accelerate the large scale manufacturing of ICs with Cu interconnects, and may apply to any other CVD process utilizing low volatility liquid precursors. An improved liquid vaporization source will find immediate use on all Cu CVD systems and hence be a strategic SMI component product. The unit will also find applications to similar temperature sensitive, low volatility liquids and well meets SMI's CVD components sales thrusts.

这个小型企业创新研究(SBIR)第一阶段项目将致力于开发先进的前体蒸发模块，重点应用于铜的金属化。快速大面积CVD是铜种子层所需的，或者最好是用于全接触层的沉积。CVD设备制造商已经满足了沉积工具的需求；铜前驱体的开发商也做出了回应，以实现铜CVD。然而，所选择的铜前驱体Cupra Select TM(液体)具有相对较低的蒸汽传输率，因为它的蒸汽压较低，再加上较窄的工作温度范围(43℃时的蒸汽压等于0.4 Torr，超过约45℃，该前体开始分解)。闪蒸不是一种解决方案，因为它的分解温度低。有限的水蒸气输运阻碍了高速大面积生长。这导致了多步多机铜金属化工艺的发展(CVD种子层，然后是整个层的电化学沉积)。这是可以容忍的，但效率非常低，因此代价高昂。SMI建议创造一种可申请专利的大容量液体汽化来源。我们建议的来源提供至少5倍的可用铜蒸气传输增加，并有望允许CVD取代目前的两步法。如果开发成功，SMI的信号源将投入商业使用。这一努力将有助于加快铜互连集成电路的大规模制造，并可能适用于任何其他使用低挥发性液体前体的CVD工艺。改进的液体汽化源将立即在所有铜CVD系统上使用，因此是一种战略性的SMI组件产品。该装置还将应用于类似的温度敏感型、低挥发性液体，并很好地满足SMI的CVD元件销售推动力。