SBIR Phase I: Production Halide-CVD System for Bulk SiC Crystal Growth

这一小型企业创新研究(SBIR)第一阶段研究项目将为直径达6英寸的商业级块状碳化硅衬底带来低拥有成本的生产系统。建议开发、测试和实施一套基于高温卤化物化学气相沉积(HCVD)的高纯块体碳化硅晶体生长生产系统。与目前的制造技术相比，这种方法的优势是多方面的：HCVD晶体生长过程可以获得更高纯度的衬底，它可以更好地控制材料的化学计量比，它还可以为导电和半绝缘衬底提供高精度的杂质控制。碳化硅(SIC)是一种宽禁带材料，是继砷化硅和砷化镓之后的下一代高功率、高频和辐射硬器件应用的关键促进剂。由于其独特的材料和电子性能，与硅和砷化镓产品相比，碳化硅器件可以在更高的额定功率以及更高的频率和温度下工作。出于这个原因，这些高性能设备在商业和军事设备应用中都受到了强烈的追捧。然而，到目前为止，由于缺乏高纯度外延薄膜和衬底的生产能力，其商业潜力一直受到限制。

This Small Business Innovation Research (SBIR) Phase I research project will result in a low cost-of-ownership production system for commercial grade bulk SiC substrates up to 6" in diameter. It proposes to develop, test and implement a production system for high purity, bulk SiC crystal growth based on high temperature Halide Chemical Vapor Deposition (HCVD). The advantages of this approach over current manufacturing technology are multifold: HCVD crystal growth processes yield substrates of higher purity, it offers better control over the material stoichiometry and it offers the advantage of highly accurate impurity control for conductive and semi-insulating substrates. Silicon carbide (SiC) is a wide bandgap material that is the proven key enabler of the next-generation high power, high-frequency and radiation hard device applications succeeding silicon and gallium arsenide. Due to its unique materials and electronic properties, SiC devices can function under higher power ratings as well as higher frequency and temperatures compared to Si and GaAs products. For that reason, these high-performance devices are intensely sought after for both commercial and military device applications. To date, however, its commercial potential has been limited by a lack of production capacity for high purity epitaxial films and substrates.