1.3um VCSELs using InGaAs/GaPAsSb Type-II Quantum Wells Grown on GaAs

使用在 GaAs 上生长的 InGaAs/GaPAsSb II 型量子阱的 1.3um VCSEL

• 批准号: 0070125
• 负责人: Yong-Hang Zhang
• 金额: $ 21万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-08-01 至 2004-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0070125&HistoricalAwards=false
• 关键词: 1.3um; VCSELs; using; InGaAs; GaPAsSb

1.3-mm vertical-cavity surface-emitting laser (VCSEL) is an enabling device for future optical 10Gbit Ethernet and local area network. In the present proposal, we propose a novel approach to make 1.3 mm VCSELs on GaAs substrates with a single step epitaxial growth. The basic idea is to use an InxGa1-xAs/GaPyAszSb1-y-z/InxGa1-xAs type-II quantum well (QW) structure as the active region. Our preliminary theoretical and experimental studies of the proposed type-II QW structure have shown that the idea is feasible. A detailed theoretical model has been used to calculate the transition energies, overlaps between electron and hole wavefunctions, and gain spectra for the type-II QW structures. The results show that a gain of 8000 cm-1 can be reached under an electric injection of 10.1018 cm-3. Based on the theoretical design, several test samples for photoluminescence and LED structures have been grown by a specially configured molecular beam epitaxy (MBE) machine. TEM images clearly show well-defined QW structures. Strong room temperature photoluminescence from the QW samples and electroluminescence from the LEDs have been clearly observed. In the present proposed program, we will focus on three major tasks: 1) Further detailed theoretical modeling of gain spectra and optimized device structures of different variation of the proposed InGaAs/GaPAsSb type-II QWs; 2) MBE growth and materials characterization of the new QW structures to understand various growth related issues and find the optimized growth conditions for the VCSELs; 3) Detailed physics study of the carrier life time and optical properties of the InGaAs/GaPAsSb type-II QWs using low temperature cw and time resolved photoluminescence spectroscopy; 4) Device demonstration of cw VCSELs.In the proposed program, 2 PhD students will be supported. There will be also several undergraduate students to be involved in part of the program through their senior design projects.

1.3mm垂直腔面发射激光器（VCSEL）是未来光10 Gbit以太网和局域网的一种使能器件。在本建议中，我们提出了一种新的方法，使1.3毫米垂直腔面发射激光器的GaAs衬底上的一个单一的步骤外延生长。基本思想是使用InxGa 1-xAs/GaPyAszSb 1-y-z/InxGa 1-xAs II型量子阱（QW）结构作为有源区。我们对所提出的第二类量子阱结构的初步理论和实验研究表明，这一想法是可行的。使用详细的理论模型计算了II型量子阱结构的跃迁能、电子和空穴波函数之间的重叠以及增益谱。结果表明，在注入电流为10.1018cm-3时，增益可达8000 cm-1。在理论设计的基础上，利用分子束外延（MBE）装置生长了几种用于光致发光和LED结构的测试样品。 TEM图像清楚地显示了明确的量子阱结构。 强的室温光致发光的量子阱样品和发光二极管的电致发光已经清楚地观察到。在本研究计划中，我们将着重于三个主要的工作：1）对所提出的InGaAs/GaPAsSb Ⅱ型量子阱的增益谱和优化器件结构进行更详细的理论建模; 2）对新量子阱结构进行分子束外延生长和材料表征，以了解各种与生长相关的问题，并找到VCSEL的最佳生长条件; 3）利用低温连续波和时间分辨光致发光光谱对InGaAs/GaPAsSb II型量子阱的载流子寿命和光学特性进行详细的物理研究; 4）连续波VCSEL器件演示。 也将有几个本科生通过他们的高级设计项目参与部分计划。