InAs/InP 1.5 um quantum dot/dash VCSELs for optical/wireless access networks

用于光纤/无线接入网络的 InAs/InP 1.5 um 量子点/划线 VCSEL

• 批准号: 572128-2022
• 负责人: Zhang, JohnXiupuJX
• 金额: $ 1.6万
• 依托单位: Concordia University
• 依托单位国家: 加拿大
• 项目类别: Alliance Grants
• 财政年份: 2022
• 资助国家: 加拿大
• 起止时间: 2022-01-01 至 2023-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=752000
• 关键词: InAs; InP; 1.5; um; quantum

Recent advance in InP quantum well (QW) vertical cavity surface-emitting laser (VCSEL) emitting at 1.5 um has promoted its applications for optical access networks, thanks to their advantages of smaller footprint, wafer-scale testing, lower power consumption and in particular much lower cost compared with conventional edge-emitting counterparts. Corresponding to QW, quantum dot/dash (QD) introduces a reduction of dimensionality of the carrier confinement from 2-D to 0/1-D, resulting in the formation of a discrete energy level structure, thus QDs would induce improvements in temperature dependence of threshold current and output power, lower threshold current density and increased material gain, high differential gain, and small linewidth enhancement factor for QD lasers. InP QD combined with vertical cavity, i.e. InP QD VCSEL, would lead to better performances in addition to low cost. Indeed, one research work was reported so far, and it was shown that InP QD VCSEL does have a much lower threshold current, i.e. lower power consumption. FONEX is a supplier of optical transceivers for optical access networks, in which InP QW VCSELs are being used. Straightforwardly, development of InP QD VCSELs emitting at 1.5um by FONEX is desired for performance improvement and lower cost. Dr. Zhang at Concordia has researched InP QD edge-emitting lasers for a decade, collaborating with NRC in Ottawa. This project will kick off research of InAs/InP QD VCSELs, and three steps will be considered from simple to high-performance structure: multimode InP QD VCSEL, single-mode InP QD VCSEL, and wavelength-tunable InP QD VCSEL. This research is complementary to current NRC and Concordia research works, and benefits to FONEX and Canada in innovated low-cost and high-performance laser technology.

INP量子井（QW）垂直腔表面发射激光（VCSEL）的最新进展以1.5 UM发射促进了其用于光学访问网络的应用，这要归功于它们的优势，较小的占地面积，晶圆尺度测试，较低的功耗以及尤其是传统的Edge-Edge-Edge-Edge-Edge-Edge-Edge-Edge-Exparters。 与QW相对应，量子点/破折号（QD）引入了载体约束的尺寸从2-D降低到0/1-D，从而形成了离散的能级结构，因此QD会诱导阈值电源的温度依赖性提高，较低的电流密度和增加材料的增益，并增强了较低的差异。 INP QD与垂直腔相结合，即INP QD VCSEL，除了低成本外，还会带来更好的性能。确实，到目前为止，一项研究工作已经报道，这表明INP QD VCSEL的阈值电流确实要低得多，即较低的功耗。 FONEX是用于使用INP QW VCSEL的光学访问网络的光学收发器的供应商。直接地，需要通过FONEX发射1.5UM的INP QD VCSEL，以提高性能和较低的成本。 Concordia的Zhang博士已经研究了INP QD Edge-Edge-Edge-Edge-Edge-Edge-Edgutting激光器，与NRC合作在渥太华与NRC合作。该项目将启动INAS/INP QD VCSELS的研究，将考虑从简单到高性能结构进行三个步骤：多模型INP QD VCSEL，单模INP QD QD QD VCSEL和波长 - 可调INP INP QD QD VCSEL。 这项研究与当前的NRC和Concordia研究工作互补，并在创新的低成本和高性能激光技术中对Fonex和Canada的好处。