InAs/InP 1.5 um quantum dot/dash VCSELs for optical/wireless access networks

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Recent advance in InP quantum well (QW) vertical cavity surface-emitting laser (VCSEL) emitting at 1.5 um has promoted its applications for optical access networks, thanks to their advantages of smaller footprint, wafer-scale testing, lower power consumption and in particular much lower cost compared with conventional edge-emitting counterparts. Corresponding to QW, quantum dot/dash (QD) introduces a reduction of dimensionality of the carrier confinement from 2-D to 0/1-D, resulting in the formation of a discrete energy level structure, thus QDs would induce improvements in temperature dependence of threshold current and output power, lower threshold current density and increased material gain, high differential gain, and small linewidth enhancement factor for QD lasers. InP QD combined with vertical cavity, i.e. InP QD VCSEL, would lead to better performances in addition to low cost. Indeed, one research work was reported so far, and it was shown that InP QD VCSEL does have a much lower threshold current, i.e. lower power consumption. FONEX is a supplier of optical transceivers for optical access networks, in which InP QW VCSELs are being used. Straightforwardly, development of InP QD VCSELs emitting at 1.5um by FONEX is desired for performance improvement and lower cost. Dr. Zhang at Concordia has researched InP QD edge-emitting lasers for a decade, collaborating with NRC in Ottawa. This project will kick off research of InAs/InP QD VCSELs, and three steps will be considered from simple to high-performance structure: multimode InP QD VCSEL, single-mode InP QD VCSEL, and wavelength-tunable InP QD VCSEL. This research is complementary to current NRC and Concordia research works, and benefits to FONEX and Canada in innovated low-cost and high-performance laser technology.