"Meeting with MBE Pioneers", a Special Symposium Held at the International Conference on Molecular Beam Epitaxy, Flagstaff Arizona, September 7, 2014.

拟议的项目将支持参加2014年9月7日在亚利桑那州弗拉格斯塔夫高国会议中心举行的研讨会的先驱分子束外延（MBE）。这次特别研讨会将在2014年9月8日至12日举行的分子束外延国际会议之前举行。MBE会议自1978年以来一直在举行，为报告基础和应用分子束外延研究领域的新发展提供了一个突出的国际论坛。研讨会将通过聚集不同的专家，研究人员和学生，促进III-V族半导体领先研究的进展。该计划提供了了解基础和应用MBE研究，新材料合成，新型异质结构形成以及创新器件开发的最新发展的机会。III-V、II-VI、IV-VI和IV半导体包括宽带隙材料、纳米线和量子点以及各种其它新颖器件。研讨会中讨论的半导体技术进步提供了满足对具有多种功能的更高性能器件日益增长的需求的手段，以支持通信和传感应用。将通过在《晶体生长杂志》上介绍研讨会论文进一步传播。

The proposed project will support participation of Molecular Beam Epitaxy (MBE) of pioneers in a Symposium to be held on September 7, 2014 at the High Country Conference Center, Flagstaff, Arizona. This special Symposium will precede the International Conference on Molecular Beam Epitaxy, which will take place from September 8 to 12, 2014. The MBE conference has taken place since 1978 and has provided a prominent international forum for reporting new developments in the areas of fundamental and applied molecular beam epitaxy research.. The Symposium will foster advances in the leading research on III-V semiconductors, by gathering a diverse group of experts, researchers and students. The program provides the opportunity to learn about the latest developments in fundamental and applied MBE research, synthesis of new materials, formation of novel heterostructures, and the development of innovative devices. III-V, II-VI, IV-VI and IV semiconductors are addressed including wide bandgap materials, nanowires and quantum dots and various other novel devices. Technological advances of the semiconductors addressed in the Symposium offer the means to meet the increasing demand for higher performance devices with multiple functionalities, in support of communications and sensing applications. Further dissemination will be provided with a presentation of Symposium papers in the Journal of Crystal Growth.