NIRT: Novel Energy Conversion Devices Based on Nanowire Heterostructures

NIRT：基于纳米线异质结构的新型能量转换器件

• 批准号: 0103609
• 负责人: Arunava Majumdar
• 金额: $ 134.32万
• 依托单位: University of California-Berkeley
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-07-01 至 2005-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0103609&HistoricalAwards=false
• 关键词: NIRT; Novel; Energy; Conversion; Devices

This proposal was received in response to NSE, NSF-0019. The goal of this proposal is to develop the scientific and engineering foundations of a broad range of energy conversion devices based on the novel approach of using 1-D semiconducting nanowire heterostructures. These heterostructures will consist of nanowires made of two or more single crystal semiconducting materials that are spatially arranged in such a manner that confinement effects are exploited in new and unique ways. The approach will rely on a promising chemical synthesis technique called vapor-liquid-solid (VLS) process that can be used to grow monocrystalline nanowires Si, Ge, SiGe, ZnO and various III-V and II-VI semiconductors. Electron and phonon confinement as well as the availability of new material phases in nanowire heterostructures will be used to tailor electronic, thermal, thermoelectric, optical and electromechanical properties. Based on the fundamental understanding of these properties, three different types of integrated devices will be developed to convert energy between thermal, mechanical, optical, and mechanical forms. The first will concentrate on high-performance thermoelectric devices for refrigeration and power generation. The second will investigate light emitting devices that can be used for low-loss coupling to optical fibers. Finally, the piezoelectric properties will be used for developing nanoelectromechanical sensors and actuators.

该提案是对NSE，NSF-0019的回应。该提案的目标是开发基于使用1-D半导体纳米线异质结构的新方法的各种能量转换器件的科学和工程基础。 这些异质结构将由两种或更多种单晶半导体材料制成的纳米线组成，这些材料在空间上以这样一种方式排列，即以新的和独特的方式利用限制效应。 该方法将依赖于一种有前途的化学合成技术，称为汽-液-固（VLS）工艺，可用于生长单晶纳米线Si，Ge，SiGe，ZnO和各种III-V和II-VI半导体。 电子和声子限制以及纳米线异质结构中新材料相的可用性将用于定制电子，热，热电，光学和机电性能。 基于对这些性质的基本理解，将开发三种不同类型的集成器件，以在热、机械、光学和机械形式之间转换能量。 第一个项目将集中于用于制冷和发电的高性能热电设备。 第二部分将研究可用于低损耗耦合到光纤的发光器件。 最后，压电特性将用于开发纳米机电传感器和致动器。