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Structures and Properties of Hydrogen-Containing Defects in Semiconductors

Structures and Properties of Hydrogen-Containing Defects in Semiconductors
半导体中含氢缺陷的结构和性质
批准号:
0108914
负责人:
Michael Stavola
金额:
$25.5万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2001
资助国家:
美国
项目状态:
已结题
起止时间:
2001-11-01 至 2005-10-31

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中文摘要
翻译
半导体中的含氢缺陷由于其迷人的微观性质以及它们在决定电子材料和器件性能方面所起的重要作用,一直是理论和实验研究的热点。这一个人研究人员奖将为一个调查硅中含氢缺陷的项目提供支持。该项目由几个互补的推力组成,最近的进展使新的研究具有吸引力。第一个是关于用振动光谱学研究半导体中的氢分子的新机会。其他研究涉及与氢络合的深能级缺陷的结构、振动性质和形成机制。该项目的主要目标是对半导体中的氢及其与其他缺陷和杂质的相互作用有一个基本的了解。将采用各种技术,包括振动光谱、单轴应力和含氢分子的硅的电子辐照。这一实验研究计划为培养学生的半导体实验物理提供了一个很好的手段。这项工作专注于半导体材料研究中当前的重要问题,为研究生和本科生在工业研究和开发方面的成功职业生涯奠定了坚实的基础。多年来,半导体中%的氢一直是人们感兴趣的问题,因为氢对器件材料的电学性能具有重要影响。例如,氢是一种常见的无意污染物,可能对半导体材料的受控掺杂和可靠性产生有害影响。或者,氢可以对高度有缺陷的低成本材料产生有益的影响。例如,有意将氢引入太阳能级硅中,以提高太阳能电池的效率。氢钝化缺陷和参与缺陷过程的机制仍不清楚。这一个人研究人员奖将支持一个项目,其主要目标是对半导体中的氢及其与其他缺陷和杂质的相互作用有一个基本的了解。这一实验研究计划为培养学生的半导体实验物理提供了一个很好的手段。这项工作专注于半导体材料研究中当前的重要问题,并为研究生和本科生在工业研究和开发领域的成功职业生涯奠定了坚实的基础。
英文摘要
Hydrogen-containing defects in semiconductors continue to be the subject of intense theoretical and experimental study because of their fascinating microscopic properties and the important role they play in determining the properties of electronic materials and devices. This individual investigator award will provide support for a project to investigate hydrogen-containing defects in Si. The project consists of several complementary thrusts for which recent advances make new studies attractive. The first concerns new opportunities for the study of H2 molecules in semiconductors by vibrational spectroscopy. Other studies are concerned with the structures, vibrational properties, and formation mechanisms of deep-level defects that are complexed with hydrogen. The primary goal of the project is to develop a fundamental understanding of hydrogen in semiconductors and its interactions with other defects and impurities. A variety of techniques will be employed, including vibrational spectroscopy, uniaxial stress, and electron irradiation of Si containing H2 molecules. This experimental research program provides an excellent means to train students in experimental semiconductor physics. The work focuses on important, current problems in semiconductor materials research and provides graduate and undergraduate students a solid foundation for successful careers in industrial research and development.%%%Hydrogen in semiconductors has been of interest for many years because of the important effect hydrogen can have on the electrical properties of device materials. For example, hydrogen is a frequent unintentional contaminant that can have deleterious effects on the controlled doping and reliability of semiconductor materials. Alternatively, hydrogen can have beneficial effects in low-cost materials that are highly defective. For example, hydrogen is intentionally introduced into solar-grade Si to increase the efficiency of solar cells. The mechanisms by which hydrogen passivates defects and participates in defect processes remain poorly understood. This individual investigator award will support a project having the primary goal developing a fundamental understanding of hydrogen in semiconductors and its interactions with other defects and impurities. This experimental research program provides an excellent means to train students in experimental semiconductor physics. The work focuses on important, current problems in semiconductor materials research and provides graduate and undergraduate students a solid foundation for successful careers in industrial research and development.***
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Hydrogen in the Ultrawide Bandgap Semiconductor beta-Ga203
  • 批准号:
    1901563
  • 项目类别:
    Standard Grant
  • 资助金额:
    $33.67万
  • 财政年份:
    2019
  • 负责人:
    Michael Stavola
  • 依托单位:
Hydrogen in Transparent Conducting Oxides
  • 批准号:
    1160756
  • 项目类别:
    Standard Grant
  • 资助金额:
    $30.0万
  • 财政年份:
    2012
  • 负责人:
    Michael Stavola
  • 依托单位:
Hydrogen in Crystalline Semiconductors
  • 批准号:
    0802278
  • 项目类别:
    Standard Grant
  • 资助金额:
    $27.73万
  • 财政年份:
    2008
  • 负责人:
    Michael Stavola
  • 依托单位:
Atomic-Scale Structures and Properties of Hydrogen-Containing Defects in Semiconductors
  • 批准号:
    0403641
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $29.4万
  • 财政年份:
    2004
  • 负责人:
    Michael Stavola
  • 依托单位:
海外基金