Structures and Properties of Hydrogen-Containing Defects in Semiconductors
半导体中含氢缺陷的结构和性质
基本信息
- 批准号:0108914
- 负责人:
- 金额:$ 25.5万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2001
- 资助国家:美国
- 起止时间:2001-11-01 至 2005-10-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Hydrogen-containing defects in semiconductors continue to be the subject of intense theoretical and experimental study because of their fascinating microscopic properties and the important role they play in determining the properties of electronic materials and devices. This individual investigator award will provide support for a project to investigate hydrogen-containing defects in Si. The project consists of several complementary thrusts for which recent advances make new studies attractive. The first concerns new opportunities for the study of H2 molecules in semiconductors by vibrational spectroscopy. Other studies are concerned with the structures, vibrational properties, and formation mechanisms of deep-level defects that are complexed with hydrogen. The primary goal of the project is to develop a fundamental understanding of hydrogen in semiconductors and its interactions with other defects and impurities. A variety of techniques will be employed, including vibrational spectroscopy, uniaxial stress, and electron irradiation of Si containing H2 molecules. This experimental research program provides an excellent means to train students in experimental semiconductor physics. The work focuses on important, current problems in semiconductor materials research and provides graduate and undergraduate students a solid foundation for successful careers in industrial research and development.%%%Hydrogen in semiconductors has been of interest for many years because of the important effect hydrogen can have on the electrical properties of device materials. For example, hydrogen is a frequent unintentional contaminant that can have deleterious effects on the controlled doping and reliability of semiconductor materials. Alternatively, hydrogen can have beneficial effects in low-cost materials that are highly defective. For example, hydrogen is intentionally introduced into solar-grade Si to increase the efficiency of solar cells. The mechanisms by which hydrogen passivates defects and participates in defect processes remain poorly understood. This individual investigator award will support a project having the primary goal developing a fundamental understanding of hydrogen in semiconductors and its interactions with other defects and impurities. This experimental research program provides an excellent means to train students in experimental semiconductor physics. The work focuses on important, current problems in semiconductor materials research and provides graduate and undergraduate students a solid foundation for successful careers in industrial research and development.***
半导体中的含氢缺陷由于其迷人的微观性质以及在决定电子材料和器件性能方面的重要作用而继续成为理论和实验研究的主题。 这项个人研究者奖将为一个研究硅中含氢缺陷的项目提供支持。 该项目包括几个互补的重点,最近的进展使新的研究具有吸引力。 第一个问题是利用振动光谱学研究半导体中H2分子的新机会。 其他研究涉及与氢络合的深能级缺陷的结构、振动性质和形成机制。 该项目的主要目标是对半导体中的氢及其与其他缺陷和杂质的相互作用有一个基本的了解。 将采用各种技术,包括振动光谱,单轴应力,和电子辐照的Si含H2分子。 该实验研究计划为培养学生的实验半导体物理提供了一个很好的手段。 这项工作的重点是重要的,目前的问题,在半导体材料的研究,并提供研究生和本科生在工业研究和开发的成功职业生涯的坚实基础。由于氢对器件材料的电性能具有重要影响,半导体中的氢多年来一直受到关注。 例如,氢是一种常见的无意污染物,其可能对半导体材料的受控掺杂和可靠性具有有害影响。 或者,氢可以对缺陷较多的低成本材料产生有益影响。 例如,有意将氢引入太阳能级Si中以提高太阳能电池的效率。 氢钝化缺陷和参与缺陷过程的机制仍然知之甚少。 该个人研究者奖将支持一个项目,该项目的主要目标是对半导体中的氢及其与其他缺陷和杂质的相互作用有一个基本的了解。 该实验研究计划为培养学生的实验半导体物理提供了一个很好的手段。 这项工作的重点是重要的,当前的问题,在半导体材料的研究,并提供研究生和本科生在工业研究和开发成功的职业生涯奠定了坚实的基础。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Michael Stavola其他文献
Hindered rotation of OD–Li in MgO: IR absorption experiments and theory
- DOI:
10.1016/j.physb.2007.08.202 - 发表时间:
2007-12-15 - 期刊:
- 影响因子:
- 作者:
Kevin R. Martin;Chao Peng;Suppawan Kleekajai;Philip Blaney;Eric Diamond;W. Beall Fowler;Michael Stavola;Roberto González - 通讯作者:
Roberto González
Workshop on hydrogen effect in InP and related compounds
- DOI:
10.1007/bf03000721 - 发表时间:
1991-03-01 - 期刊:
- 影响因子:2.200
- 作者:
Jacques Chevallier;Bernard Clerjaud;Eyrug Davies;Jean-Michel Dumas;Noble Johnson;Ronald C. Newman;Michael Stavola;Pierre Viktorovitch;John Zavada - 通讯作者:
John Zavada
Michael Stavola的其他文献
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{{ truncateString('Michael Stavola', 18)}}的其他基金
Hydrogen in the Ultrawide Bandgap Semiconductor beta-Ga203
超宽带隙半导体 beta-Ga2O3 中的氢
- 批准号:
1901563 - 财政年份:2019
- 资助金额:
$ 25.5万 - 项目类别:
Standard Grant
Hydrogen in Transparent Conducting Oxides
透明导电氧化物中的氢
- 批准号:
1160756 - 财政年份:2012
- 资助金额:
$ 25.5万 - 项目类别:
Standard Grant
Atomic-Scale Structures and Properties of Hydrogen-Containing Defects in Semiconductors
半导体中含氢缺陷的原子尺度结构和性质
- 批准号:
0403641 - 财政年份:2004
- 资助金额:
$ 25.5万 - 项目类别:
Continuing Grant
Structures and Electrical Properties of Hydrogen-Containing Defects in Semiconductors
半导体中含氢缺陷的结构和电学性质
- 批准号:
9801843 - 财政年份:1998
- 资助金额:
$ 25.5万 - 项目类别:
Continuing Grant
Microscopic Properties of Impurity-Hydrogen Complexes in Semiconductors
半导体中杂质氢配合物的微观性质
- 批准号:
9415404 - 财政年份:1995
- 资助金额:
$ 25.5万 - 项目类别:
Continuing Grant
Microscopic Properties of Dopant-Hydrogen Complexes in Semiconductors
半导体中掺杂剂-氢配合物的微观性质
- 批准号:
9023419 - 财政年份:1991
- 资助金额:
$ 25.5万 - 项目类别:
Continuing Grant
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