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Structures and Properties of Hydrogen-Containing Defects in Semiconductors

Structures and Properties of Hydrogen-Containing Defects in Semiconductors
半导体中含氢缺陷的结构和性质
批准号:
0108914
负责人:
Michael Stavola
金额:
$25.5万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2001
资助国家:
美国
项目状态:
已结题
起止时间:
2001-11-01 至 2005-10-31

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中文摘要
翻译
半导体中的含氢缺陷由于其迷人的微观性质以及在决定电子材料和器件性能方面的重要作用而继续成为理论和实验研究的主题。 这项个人研究者奖将为一个研究硅中含氢缺陷的项目提供支持。 该项目包括几个互补的重点,最近的进展使新的研究具有吸引力。 第一个问题是利用振动光谱学研究半导体中H2分子的新机会。 其他研究涉及与氢络合的深能级缺陷的结构、振动性质和形成机制。 该项目的主要目标是对半导体中的氢及其与其他缺陷和杂质的相互作用有一个基本的了解。 将采用各种技术,包括振动光谱,单轴应力,和电子辐照的Si含H2分子。 该实验研究计划为培养学生的实验半导体物理提供了一个很好的手段。 这项工作的重点是重要的,目前的问题,在半导体材料的研究,并提供研究生和本科生在工业研究和开发的成功职业生涯的坚实基础。由于氢对器件材料的电性能具有重要影响,半导体中的氢多年来一直受到关注。 例如,氢是一种常见的无意污染物,其可能对半导体材料的受控掺杂和可靠性具有有害影响。 或者,氢可以在低成本的高缺陷材料中产生有益的效果。 例如,有意将氢引入太阳能级Si中以提高太阳能电池的效率。 氢钝化缺陷和参与缺陷过程的机制仍然知之甚少。 该个人研究者奖将支持一个项目,该项目的主要目标是对半导体中的氢及其与其他缺陷和杂质的相互作用有一个基本的了解。 该实验研究计划为培养学生的实验半导体物理提供了一个很好的手段。 这项工作的重点是重要的,当前的问题,在半导体材料的研究,并提供研究生和本科生在工业研究和开发成功的职业生涯奠定了坚实的基础。
英文摘要
Hydrogen-containing defects in semiconductors continue to be the subject of intense theoretical and experimental study because of their fascinating microscopic properties and the important role they play in determining the properties of electronic materials and devices. This individual investigator award will provide support for a project to investigate hydrogen-containing defects in Si. The project consists of several complementary thrusts for which recent advances make new studies attractive. The first concerns new opportunities for the study of H2 molecules in semiconductors by vibrational spectroscopy. Other studies are concerned with the structures, vibrational properties, and formation mechanisms of deep-level defects that are complexed with hydrogen. The primary goal of the project is to develop a fundamental understanding of hydrogen in semiconductors and its interactions with other defects and impurities. A variety of techniques will be employed, including vibrational spectroscopy, uniaxial stress, and electron irradiation of Si containing H2 molecules. This experimental research program provides an excellent means to train students in experimental semiconductor physics. The work focuses on important, current problems in semiconductor materials research and provides graduate and undergraduate students a solid foundation for successful careers in industrial research and development.%%%Hydrogen in semiconductors has been of interest for many years because of the important effect hydrogen can have on the electrical properties of device materials. For example, hydrogen is a frequent unintentional contaminant that can have deleterious effects on the controlled doping and reliability of semiconductor materials. Alternatively, hydrogen can have beneficial effects in low-cost materials that are highly defective. For example, hydrogen is intentionally introduced into solar-grade Si to increase the efficiency of solar cells. The mechanisms by which hydrogen passivates defects and participates in defect processes remain poorly understood. This individual investigator award will support a project having the primary goal developing a fundamental understanding of hydrogen in semiconductors and its interactions with other defects and impurities. This experimental research program provides an excellent means to train students in experimental semiconductor physics. The work focuses on important, current problems in semiconductor materials research and provides graduate and undergraduate students a solid foundation for successful careers in industrial research and development.***
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Hydrogen in the Ultrawide Bandgap Semiconductor beta-Ga203
  • 批准号:
    1901563
  • 项目类别:
    Standard Grant
  • 资助金额:
    $33.67万
  • 财政年份:
    2019
  • 负责人:
    Michael Stavola
  • 依托单位:
Hydrogen in Transparent Conducting Oxides
  • 批准号:
    1160756
  • 项目类别:
    Standard Grant
  • 资助金额:
    $30.0万
  • 财政年份:
    2012
  • 负责人:
    Michael Stavola
  • 依托单位:
Hydrogen in Crystalline Semiconductors
  • 批准号:
    0802278
  • 项目类别:
    Standard Grant
  • 资助金额:
    $27.73万
  • 财政年份:
    2008
  • 负责人:
    Michael Stavola
  • 依托单位:
Atomic-Scale Structures and Properties of Hydrogen-Containing Defects in Semiconductors
  • 批准号:
    0403641
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $29.4万
  • 财政年份:
    2004
  • 负责人:
    Michael Stavola
  • 依托单位:
海外基金