Microscopic Properties of Dopant-Hydrogen Complexes in Semiconductors

本课题计划研究掺杂氢配合物的微观特性。氢作为半导体中普遍存在的杂质，可以形成具有多种缺陷的配合物，从而改变其电学和光学性质。这项研究将涉及振动光谱、单轴应力技术和理论的结合，以解决这些复合物。除了寻找新的与氢有关的缺陷中心外，还将研究一些已知但尚未完全了解的缺陷中心。氢在缺陷配合物内的运动也将被研究。与氢的运动有关的是主原子的弛豫。氢的轻也表明量子力学效应可能很重要。

This research project plans to investigate the microscopic characteristics of dopant-hydrogen complexes. Hydrogen, as a ubiquitous impurity in semiconductors, forms complexes with a wide variety of defect species, thereby modifying the electrical and optical properties. The research will involve a combination of vibrational spectroscopy, uniaxial stress techniques, and theory to address these complexes. In addition to searching for new hydrogen- related defect centers a number of centers that are already known but not well understood will be studied. The motion of the hydrogen within the defect complex will also be studied. Associated with the hydrogen motion are relaxations of the host atoms. The lightness of the hydrogen also suggests quantum mechanical effects may be important.