Microscopic Properties of Impurity-Hydrogen Complexes in Semiconductors

氢是半导体中常见的高活性杂质。十多年来，人们已经知道氢与深层杂质形成配合物并改变其电学性质，但由于无法获得结构敏感数据，对这些含氢配合物的了解仍然很少。先前，PI发现氢与硅中的过渡金属杂质可以形成足够数量的配合物。本研究将利用这一发现，使用结构敏感的方法，如红外吸收和电子顺磁共振光谱。利用这些技术对几种氢化深度缺陷的微观结构和电学性能进行了研究。这项工作的主要目标是建立对几个模型系统的基本理解，这将为理解半导体中具有深层缺陷的复合物提供基础。氢经常被引入到半导体材料中，在那里它改变了缺陷和杂质的电学性质。这一点尤其正确，例如，在太阳能电池或平板显示技术中使用的多晶或非晶半导体中，氢的存在是改善材料特性所必需的。由于以前很难确定氢缺陷的微观结构，所以在基本水平上还没有理解氢是如何影响缺陷性能的。在这项工作中，将进行结构敏感测量来阐明硅中几种含氢缺陷的性质，这些缺陷可以用作帮助理解半导体缺陷如何与氢相互作用的模型。* * *

9415404 Stavola Hydrogen is a common and highly reactive impurity in semiconductors. It has been known for more than a decade that hydrogen forms complexes with deep level impurities and modifies their electrical properties, but these hydrogen containing complexes have remained poorly understood because it has not been possible to obtain structure sensitive data. Previously the PI discovered that complexes of hydrogen with transition metal impurities in silicon can be formed in sufficient number. This research will take advantage of this finding to use structure sensitive methods like infrared absorption and electron paramagnetic resonance spectroscopies. The microscopic structures and electrical properties of several hydrogenated deeplevel defects will be investigated using these techniques. The primary goal of this work is to develop a fundamental understanding of several model systems that will provide a foundation for understanding complexes with deep-level defects in semiconductors. %%% Hydrogen is frequently introduced into semiconductor materials where it modifies the electrical properties of defects an impurities. This is particularly true, for example, in the polycrystalline or amorphous semiconductors used in solar cell or flat panel display technologies where the presence of hydrogen is necessary to improve material characteristics. It has not been understood at a fundamental level how hydrogen affects defect properties because, previously, it had been difficult to determine the microscopic structures of the hydrogen defects. In this work, structure-sensitive measurements will be made to elucidate the properties of several hydrogen containing defects in Si that can be used as models to help understand how semiconductor defects interact with hydrogen. ***