Atomic-Scale Structures and Properties of Hydrogen-Containing Defects in Semiconductors

半导体中含氢缺陷的原子尺度结构和性质

• 批准号: 0403641
• 负责人: Michael Stavola
• 金额: $ 29.4万
• 依托单位: Lehigh University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-11-01 至 2009-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0403641&HistoricalAwards=false
• 关键词: Atomic; Scale; Structures; Properties; Hydrogen

Hydrogen is an important impurity in semiconductors because of its fascinating fundamental properties and its impact on semiconductor technology. Hydrogen is introduced easily into semiconductors, either intentionally or unintentionally, where it interacts strongly with other impurities and defects. Hydrogen plays a multifaceted role where it can passivate shallow impurities, eliminate deleterious properties of deep-level defects, and, in some cases, act as an unintentional dopant or even modify the bandgap of the host crystal. This project focuses on new experiments aimed at providing structure-sensitive data for interstitial H2 in Si, elucidating the interaction of H with native defects in Si, and studying H in III-N-V alloys and in wide-band-gap semiconductors. Vibrational spectroscopy of the light H atom has proved to be an excellent probe of H-containing defects and is the principal method to be used to determine microscopic properties. The experimental work on H in semiconductors conducted in this program provides an excellent means to educate undergraduate and graduate students in semiconductor physics. Students learn about the physics of electronic materials, crystal defects, and the optical properties of materials, providing a strong foundation for careers in education or industrial R&D. Although hydrogen is the simplest atom, it is a complicated impurity in semiconductors with properties that have fascinated defect specialists. Furthermore, H is ubiquitous in the semiconductor growth and processing environment and is introduced easily into semiconductors. Once present, H modifies the electrical properties of semiconductor materials and the behavior of electronic devices. Experimental studies of the atomic-scale structures of hydrogen-containing defects in semiconductors are the focus of this research program. The absorption of infrared light by the vibrational motion of the light H atom is used to probe microscopic properties. The semiconductor materials of interest include Si, which is important for integrated circuits and solar cells, and compound semiconductors that are important for light-emitting devices. This experimental program on H in semiconductors provides an excellent opportunity for undergraduate and graduate students to learn about the semiconductor materials that are important for electronic device technology. Highly qualified undergraduates are recruited nationwide as part of Lehigh's Research Experiences for Undergraduates program which exposes students, often from small colleges, to university-level research.

氢是半导体中的一种重要杂质，因为它具有迷人的基本性质及其对半导体技术的影响。 氢很容易被有意或无意地引入半导体中，在那里它与其他杂质和缺陷发生强烈的相互作用。 氢扮演着多方面的角色，它可以钝化浅杂质，消除深能级缺陷的有害特性，并且在某些情况下，作为无意的掺杂剂，甚至修改主晶体的带隙。 该项目重点关注新实验，旨在提供Si中间隙H2的结构敏感数据，阐明H与Si中本征缺陷的相互作用，以及研究III-N-V合金和宽带隙半导体中的H。 轻氢原子的振动光谱已被证明是含氢缺陷的极好探针，并且是用于确定微观性质的主要方法。该计划中进行的半导体中H的实验工作为教育半导体物理学的本科生和研究生提供了一个很好的手段。 学生学习电子材料的物理学，晶体缺陷和材料的光学特性，为教育或工业研发事业提供坚实的基础。 虽然氢是最简单的原子，但它是半导体中的一种复杂杂质，其特性令缺陷专家着迷。 此外，H在半导体生长和加工环境中普遍存在，并且容易被引入半导体中。 一旦存在，H会改变半导体材料的电学性质和电子器件的行为。 半导体中含氢缺陷的原子尺度结构的实验研究是本研究计划的重点。 轻H原子的振动运动对红外光的吸收被用来探测微观性质。 感兴趣的半导体材料包括对集成电路和太阳能电池重要的Si，以及对发光器件重要的化合物半导体。这个半导体中的H实验项目为本科生和研究生提供了一个很好的机会，让他们了解对电子器件技术很重要的半导体材料。 高素质的本科生在全国范围内招募，作为利哈伊大学本科生研究经验计划的一部分，该计划使学生（通常来自小型学院）接触大学水平的研究。