Atomic-Scale Structures and Properties of Hydrogen-Containing Defects in Semiconductors

氢是半导体中的一种重要杂质，因为它具有迷人的基本性质和对半导体技术的影响。氢很容易被有意或无意地引入半导体中，在那里它与其他杂质和缺陷发生强烈的相互作用。氢的作用是多方面的，它可以钝化浅层杂质，消除深能级缺陷的有害性质，在某些情况下，它还可以作为无意的掺杂剂，甚至改变主体晶体的带隙。本项目致力于新的实验，旨在提供硅中间隙氢的结构敏感数据，阐明氢与硅中自然缺陷的相互作用，并研究III-N-V合金和宽带隙半导体中的氢。轻氢原子的振动光谱已被证明是一种很好的含氢缺陷的探针，也是确定微观性质的主要方法。该项目所进行的半导体中氢的实验工作为培养半导体物理本科生和研究生提供了一个很好的手段。学生学习电子材料的物理、晶体缺陷和材料的光学性质，为从事教育或工业研发工作奠定坚实的基础。虽然氢是最简单的原子，但它是半导体中一种复杂的杂质，具有令缺陷专家着迷的特性。此外，氢在半导体生长和加工环境中普遍存在，很容易被引入半导体中。一旦存在，氢就会改变半导体材料的电学性质和电子设备的行为。对半导体中含氢缺陷原子级结构的实验研究是本研究计划的重点。利用光氢原子振动对红外光的吸收来探测微观性质。感兴趣的半导体材料包括对集成电路和太阳能电池重要的硅，以及对发光设备重要的化合物半导体。这个关于半导体中的氢的实验项目为本科生和研究生提供了一个学习半导体材料的绝佳机会，半导体材料对电子设备技术非常重要。作为利哈伊本科生研究体验计划的一部分，利哈伊在全国范围内招募高素质的本科生，该计划将学生(通常来自小型学院)暴露在大学层面的研究中。

Hydrogen is an important impurity in semiconductors because of its fascinating fundamental properties and its impact on semiconductor technology. Hydrogen is introduced easily into semiconductors, either intentionally or unintentionally, where it interacts strongly with other impurities and defects. Hydrogen plays a multifaceted role where it can passivate shallow impurities, eliminate deleterious properties of deep-level defects, and, in some cases, act as an unintentional dopant or even modify the bandgap of the host crystal. This project focuses on new experiments aimed at providing structure-sensitive data for interstitial H2 in Si, elucidating the interaction of H with native defects in Si, and studying H in III-N-V alloys and in wide-band-gap semiconductors. Vibrational spectroscopy of the light H atom has proved to be an excellent probe of H-containing defects and is the principal method to be used to determine microscopic properties. The experimental work on H in semiconductors conducted in this program provides an excellent means to educate undergraduate and graduate students in semiconductor physics. Students learn about the physics of electronic materials, crystal defects, and the optical properties of materials, providing a strong foundation for careers in education or industrial R&D. Although hydrogen is the simplest atom, it is a complicated impurity in semiconductors with properties that have fascinated defect specialists. Furthermore, H is ubiquitous in the semiconductor growth and processing environment and is introduced easily into semiconductors. Once present, H modifies the electrical properties of semiconductor materials and the behavior of electronic devices. Experimental studies of the atomic-scale structures of hydrogen-containing defects in semiconductors are the focus of this research program. The absorption of infrared light by the vibrational motion of the light H atom is used to probe microscopic properties. The semiconductor materials of interest include Si, which is important for integrated circuits and solar cells, and compound semiconductors that are important for light-emitting devices. This experimental program on H in semiconductors provides an excellent opportunity for undergraduate and graduate students to learn about the semiconductor materials that are important for electronic device technology. Highly qualified undergraduates are recruited nationwide as part of Lehigh's Research Experiences for Undergraduates program which exposes students, often from small colleges, to university-level research.