Ultra-High-Capacity Optical Communications and Networking: Integrated Guided Wave Devices for Terabit per Second Optical Communications

超高容量光通信和网络：用于每秒太比特光通信的集成导波器件

• 批准号: 0123469
• 负责人: Bruce Wessels
• 金额: $ 27万
• 依托单位: Northwestern University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-09-15 至 2004-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0123469&HistoricalAwards=false
• 关键词: Ultra; Capacity; Optical; Communications; Networking

This proposal was submitted in response to the solicitation NSF 01-65 on "Ultra-High Capacity Optical Communications and Networking." Future systems for optical signal processing and communications will require large scale integration of photonic devices. Ferroelectric oxides have long been recognized as highly non-linear optical materials with significant advantages, especially when used as optical waveguides. In the form of high-index-contrast, thin film structures, high-density integrated optics can be potentially achieved. The intrinsic confinement of the electromagnetic field in the thin film guide leads to high power densities and strong optical nonlinearities. Their utilization in thin film waveguide structures, however, has been limited because of difficulties in preparing low loss materials with bulk-like non-linear optical properties. Recent advances in the epitaxy of ferroelectrics, however, indicate that thin-film guided -wave devices are now realizable. In the proposed program epitaxial ferroelectric oxide thin film waveguide structures for microphotonic devices and integrated optical systems will be investigated. The proposed work builds upon our demonstration of low loss epitaxial ferroelectric thin films prepared by metalorganic vapor phase epitaxy (MOVPE) and the demonstration of large band width guided wave electro-optic modulators. MOVPE enables the preparation of ferroelectric oxides with high electro-optic coefficients that are not available as large single crystals. Specific systems to be investigated include BaTiO3, and other ferroelectrics. Thin film guided wave electro-optic devices will be fabricated including Mach-Zehnder electro-optic modulators and beam steering devices. Thin film modulators with bandwidths of 20-100 GHz will be designed and fabricated. By using highly nonlinear ferroelectric thin films, significant improvements in bandwidth, and operating voltage are anticipated compared to conventional bulk ferroelectric devices. The feasibility of integrating epitaxial ferroelectrics with silicon will be investigated. Metalorganic molecular beam epitaxy (MOMBE) will be used to form low index, epitaxial buffer layers that act as a stable interfacial layer between the ferroelectric oxide and the silicon substrate. Devices will be fabricated using both conventional and e-beam lithography. Potential applications for microphotonic devices and systems are in terabit per second optical communications, local area networks, and optical interconnects.

本提案是应NSF 01-65关于“超大容量光通信和网络”的征集而提交的。未来的光信号处理和通信系统将需要大规模的光子器件集成。铁电氧化物长期以来一直被认为是高度非线性的光学材料，具有显著的优点，特别是用作光波导时。在高折射率对比度、薄膜结构的形式中，可以潜在地实现高密度集成光学。薄膜波导中电磁场的本征限制导致了高功率密度和强的光学非线性。然而，由于制备具有块状非线性光学性能的低损耗材料的困难，它们在薄膜波导结构中的应用受到了限制。然而，最近在铁电材料外延方面的进展表明，薄膜导波器件现在是可以实现的。在所提出的计划中，将研究用于微光子器件和集成光学系统的外延铁电氧化物薄膜波导结构。这项工作建立在我们用金属有机气相外延(MOVPE)制备的低损耗外延铁电薄膜和大带宽导波电光调制器的演示的基础上。MOVPE能够制备具有大单晶所不具备的高电光系数的铁电氧化物。要研究的具体系统包括BaTiO_3和其他铁电材料。将制作薄膜导波电光器件，包括马赫-曾德尔电光调制器和光束控制器件。将设计和制造带宽为20-100 GHz的薄膜调制器。通过使用高度非线性的铁电薄膜，与传统的块状铁电器件相比，带宽和工作电压有望显著提高。我们将研究外延铁电体与硅集成的可行性。金属有机分子束外延(MOMBE)将被用来形成低折射率的外延缓冲层，作为铁电氧化物和硅衬底之间的稳定界面层。器件将使用传统光刻和电子束光刻来制造。微光子设备和系统的潜在应用是每秒太比特的光通信、局域网和光学互连。