GOALI: Defect Structure of Epitaxial Wide Gap III-V Semiconductors

GOALI：外延宽禁带 III-V 族半导体的缺陷结构

• 批准号: 9705134
• 负责人: Bruce Wessels
• 金额: $ 37.01万
• 依托单位: Northwestern University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-07-15 至 2001-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9705134&HistoricalAwards=false
• 关键词: GOALI; Defect; Structure; Epitaxial; Wide

9705134 Wessels This GOALI proposal addresses doping induced defects in wide bandgap III-V nitride semiconductors. Issues being investigated include the structure and identity of defects in high conductivity materials, the structure and identity of compensating acceptor and donor defects, their concentration, and their stability. Studies of both atmospheric pressure MOVPE and flow modulation epitaxy are an integral part of the project. Joint collaborative activities include staff exchange with graduate students spending time at Lucent, Motorola, and Emcore. The proposed research emphasizes understanding of fundamental mechanisms and processes along with some practical aspects of electronic/photonic materials and device technology. %%% The project addresses forefront materials science research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices and integrated circuitry, in general. Additionally, the fundamental knowledge and understanding gained from the research is expected to contribute to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

该GOALI提案解决了宽带隙III-V族氮化物半导体中的掺杂诱导缺陷。正在研究的问题包括高电导率材料中缺陷的结构和特性，补偿受主和施主缺陷的结构和特性，它们的浓度和稳定性。大气压MOVPE和流量调制外延的研究是该项目的一个组成部分。联合合作活动包括与朗讯、摩托罗拉和Emcore的研究生进行人员交流。拟议的研究强调对基本机制和过程的理解，沿着电子/光子材料和器件技术的一些实际方面。该项目解决了具有高技术相关性的材料科学主题领域的前沿材料科学研究问题。 该研究将在基本层面上为电子/光子器件和集成电路的重要方面提供基本的材料科学知识。 此外，从研究中获得的基础知识和理解有望通过提供设计和生产改进材料的基本理解和基础，有助于提高先进器件和电路的性能。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。***