Synthesis, Structure and Properties of III-V Ferromagnetic Semiconductor Thin Films
Synthesis, Structure and Properties of III-V Ferromagnetic Semiconductor Thin Films
批准号:
0804479
负责人:
Bruce Wessels
金额:
$44.6万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2008
资助国家:
美国
项目状态:
已结题
起止时间:
2008-07-01 至 2012-06-30
中文摘要
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英文摘要
Technical: The development of ferromagnetic, group III-V semiconductors has provided the potential for a class of multifunctional materials that exhibit magnetic, magneto-optical, and semiconducting properties. These materials offer the potential for manipulating both spin and charge. Their utilization, however, has been impeded due to their low transition (Curie) temperatures. Recently there have been reports of ferromagnetic semiconductors with Curie temperatures in excess of 300 K. There is growing evidence that disorder plays an essential role in stabilizing ferromagnetism in certain ferromagnetic semiconductors. The question arises as to the detailed mechanism for stabilizing the high temperature ferromagnetic phase and the nature of the magnetic species. In this project, narrow bandgap indium based III-V ferromagnetic semiconductor thin films will be developed, including InMnAs and InMnSb and their solid solutions. Of specific interest is what role transition metal atomic clusters play in stabilizing high temperature ferromagnetism in these semiconductors and the nature of the short range order. Furthermore the role of free carrier concentration on the ferromagnetic phase stability will be examined. During the project, epitaxial thin alloy films will be synthesized by metalorganic vapor phase epitaxy (MOVPE). Semiconductor alloys with different manganese concentrations will be prepared to determine the role disorder plays in stabilizing ferromagnetism. Recent models based on spinodal decomposition forming ferromagnetic clusters will be tested. Experimental characterization techniques to be used include temperature and field dependent magnetization measurements, Hall effect, and magnetoresistance. The magneto-optical Kerr effect (MOKE) and its spectral dependence over the mid infrared to visible region will be used to determine the nature and magnitude of the exchange interaction in the alloys. X-ray absorption spectroscopy and x-ray magnetic circular dichroism (XMCD) at the Advanced Photon Source will be used to determine the magnetic properties of the elements comprising the alloys. Extended x-ray fine structure analysis (EXAFS), analytical electron microscopy, and an electrode atom probe with atomic scale resolution will be used to determine cluster size and distribution. Comparisons will be made between cluster sizes determined by structural and magnetic measurements.Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance, and is expected to provide scientific understanding of ferromagnetic semiconductor materials with potential applications for spin based devices such as spin valves, magnetic random access memories, and quantum computation. The project provides training of graduate and undergraduate students in an interdisciplinary topic, consisting of semiconductor physics and magnetism. The project also includes educational outreach activities to local schools and collaboration with national laboratories, which provide enhanced learning opportunities to students.
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批准号:0457610
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资助金额:$27.0万
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财政年份:2001
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负责人:Bruce Wessels
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GOALI: Defect Structure of Epitaxial Wide Gap III-V Semiconductors
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财政年份:1997
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负责人:Bruce Wessels
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Radiative and Non-radiative Centers in Indium Phosphide Alloy Thin Films and Heterostructures
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批准号:9302357
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资助金额:$32.6万
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财政年份:1993
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Defect Structure of Indium Phosphide Alloy Thin Films and Heterostructures
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财政年份:1990
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Defect Structure of Epitaxial Indium Phosphide and Its Alloys
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资助金额:$29.68万
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财政年份:1987
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Defect Structure of Epitaxial Indium Phosphide and Its Alloys (Materials Research)
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批准号:8407247
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项目类别:Continuing Grant
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资助金额:$21.2万
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财政年份:1984
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依托单位:
Vapor Phase Epitaxial Indium Phosphide Thin Films
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项目类别:Continuing Grant
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资助金额:$17.64万
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财政年份:1981
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负责人:Bruce Wessels
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依托单位:
海外基金