Non-Linear Optical Waveguide Devices for Nanophotonics

0457610 Wessels智力优点：通信和计算机系统面临着以更快的速率传递更多数据的日益增长的需求。薄膜光学器件和电路已经被提出用于这些系统，因为它们具有潜在的宽带宽度操作和集成能力。潜在的应用包括光开关、调制器、可调谐滤波器、光束控制和频率转换。 对于宽带宽的光学器件，需要具有大的光学非线性的材料。铁电氧化物由于其大的光学非线性以及光和热稳定性而提供相当大的优势。随着低损耗外延铁电薄膜和电光调制器的发展，PI现在能够实现许多适用于光信号处理的高带宽器件。在拟议的研究中，非线性光波导器件将被开发。特别感兴趣的是超宽带薄膜电光调制器。这项工作是建立在最近的薄膜铁电体的电光系数大于一个数量级的锂钛酸盐，目前的标准。薄膜带加载波导器件将被制造用于超宽带频率操作（100 GHz）。为了在低电压和宽带宽下工作，需要具有大电光系数的铁电氧化物。为了最小化由于微波和光波之间的速度失配而导致的带宽限制，将利用薄膜复合结构。光子晶体器件将由非线性氧化物波导制成。特别感兴趣的是1-D和2-D光子晶体调制器和光开关。限制带宽的因素将通过建模和测试来确定。利用薄膜铁电技术，将几种器件集成到一个平台上，实现芯片级集成。通过使用具有高光学非线性的外延铁电氧化物薄膜，与常规器件相比，预期在带宽、工作电压和尺寸方面的显著改进。预期这些器件应具有优异的光稳定性和热稳定性。器件将使用气相外延沉积，以及传统和电子束光刻。更广泛的影响：广泛的影响是实现超宽带、小尺寸、光通信和信号处理的光学器件和电路的可能性。薄膜技术的使用潜在地使得能够使用诸如硅的单个平台来实现波导、调制器、环形谐振器和开关的芯片级集成。该计划将涉及本科生，研究生和博士后研究员的培训。将通过相关的STTR计划和工业实习进行工业推广。

0457610WesselsIntellectual merit: Communication and computer systems face increasing requirements for delivery of more data at faster rates. Thin film optical devices and circuits have been proposed for these systems for both their potential wideband width operation and integration capabilities. Potential applications include optical switches, modulators, tunable filters, beam steering and frequency conversion. For wide bandwidth optical devices, materials with large optical non-linearities are needed. Ferroelectric oxides offer considerable advantages due to their large optical non-linearities and photo and thermal stability. With the recent development of low-loss epitaxial ferroelectric thin films and electro-optic modulators, the PI is now in the position to realize a number of high bandwidth devices suitable for optical signal processing. In the proposed research non-linear optical waveguide devices will be developed. Of particular interest are ultra-wideband thin film electro-optic modulators. This work builds on the recent demonstration of thin film ferroelectrics with electro-optic coefficients of more than an order of magnitude greater than lithium niobate, the current standard. Thin film strip-loaded waveguide devices will be fabricated for ultra-wideband frequency operation (100 GHz). In order to operate at low voltage, and wide bandwidth, ferroelectric oxides with large electro-optic coefficients are required. To minimize bandwidth limitations due to velocity mismatch between the microwaves and optical waves, thin film composite structures will be utilized. Photonic crystal devices will be fabricated from the non-linear oxide waveguides. Of particular interest are 1-D and 2-D photonic crystal modulators and optical switches. Factors limiting bandwidth will be determined through modeling and testing. Chip-scale integration of several devices with a single platform will be pursued using the thin film ferroelectric technology. By using epitaxial ferroelectric oxide thin films with high optical non-linearities, significant improvements in bandwidth, operating voltage, and size are expected compared to conventional devices. It is anticipated that these devices should have excellent photo and thermal stability. Devices will be fabricated using vapor phase epitaxial deposition, and both conventional and e-beam lithography. Broader impact: The broad impact is the potential realization of ultra-wide bandwidth, small size, optical devices and circuits for optical communications and signal processing. Use of thin film techniques potentially enables chip-scale integration of waveguides, modulators, ring resonators and switches using a single platform such as silicon. The program will involve training of undergraduates, graduates and postdoctoral fellows. Industrial outreach through related STTR programs and industrial internships will be pursued.