2002 Electrodeposition Gordon Research Conference

2002年电镀戈登研究会议

• 批准号: 0223754
• 负责人: Daniel Schwartz
• 金额: $ 0.5万
• 依托单位: Gordon Research Conferences
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-07-01 至 2003-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0223754&HistoricalAwards=false
• 关键词: 2002; Electrodeposition; Gordon; Research; Conference

The Electrodeposition Gordon Research Conference (GRC) is relatively new, started in1996. It grew out of the Read Conference, one of the primary scientific forums for theelectrodeposition community since the early 50's. The understanding of electrodeposition at the atomic scale has increased dramatically in recent years as new analytical methods, like scanning tunneling microscopy (STM), have been developed. This has resulted in improved control over processes, and the ability to use electrodeposition in areas where control over the nanometer scale is required. Electrodeposition is becoming accepted as a standard thin film synthesis methodology innew areas. A clear example is the adoption of electrodeposition by the electronicsindustries to form copper interconnects in VLSI. Production VLSI circuits use 135 nm wide copper wires, with research and development teams currently working on 90 nm and smaller copper interconnects. In addition, electrodeposition has a central role in nearly all micro-technologies. New areas where it is playing an increasing roll includenanofabrication and the formation of compound semiconductor thin films. The 2002conference has a special highlight on the role of electrodeposition in nano- andmicro-fabrication. This proposal will allow the organizers to continue developing the Electrodeposition GRC into the premier electrochemical materials conference.

电沉积戈登研究会议（GRC）是相对较新的，在1996年开始。它源于阅读会议，自50年代初以来，电沉积社区的主要科学论坛之一。 近年来，随着扫描隧道显微镜（STM）等新的分析方法的发展，对原子尺度上电沉积的理解急剧增加。这导致了对工艺的改进控制，以及在需要对纳米尺度进行控制的领域中使用电沉积的能力。在新的领域中，电沉积正逐渐被接受为标准的薄膜合成方法。一个明显的例子是电子工业采用电沉积形成超大规模集成电路中的铜互连。生产VLSI电路使用135 nm宽的铜线，研发团队目前正在研究90 nm和更小的铜互连。此外，电沉积在几乎所有的微技术中起着核心作用。它发挥越来越大作用的新领域包括纳米纤维和化合物半导体薄膜的形成。2002年会议特别强调了电沉积在纳米和微米制造中的作用。 这一提议将使组织者能够继续将电沉积GRC发展成为首屈一指的电化学材料会议。