SPIN ELECTRONICS Collaborative Research: Control and Detection of Spin Polarization in Semiconductor Quantum Devices

SPIN ELECTRONICS 合作研究：半导体量子器件中自旋极化的控制和检测

• 批准号: 0224060
• 负责人: Charles Marcus
• 金额: $ 16.5万
• 依托单位: Harvard University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-08-15 至 2006-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0224060&HistoricalAwards=false
• 关键词: SPIN; ELECTRONICS; Collaborative; Research; Control

This proposal was received in response to the NSF Spin Electronics for the 21st Century Initiative, Program Solicitation NSF 02-036. The proposal focuses on investigation of techniques to locally induce, control, and detect electron spin in semiconductor microstructures by using properly located electrostatic gate voltages. Electrostatic gates are easily defined on a submicron scale and should provide switching and manipulations of spin currents. A variety of approaches to this goal will be pursued, including (i) gate-programmable nuclear polarization applied to single and double quantum dots, and the transfer of nuclear spin from dot to dot, (ii) gate-controlled spin-polarization in high-mobility GaAs/AlAs epitaxial layers; and (iii) electron-spin-resonance {ESR) measurements in AlAs.Combining state-of-the-art fabrication technology, careful measurements, and theoretical analysis, the proposed research is highly interdisciplinary. It relies on expertise of three experimentalists and one theorist in engineering and physics. It also entails the full participation of graduate and undergraduate students, who will gain invaluable experience and knowledge in cutting edge materials science and engineering, with a focus on the emerging and potentially rewarding field of spin electronics.The work will be centered at Princeton University with one investigator at Harvard University. Existing facilities at Princeton and Harvard will be adequate to carry out all the proposed work. The majority of requested funding will be used to support graduate students. Workshops at Princeton are planned to insure a focused research effort and to enhance interaction among students working on the common research goals.

该提案是响应NSF 21世纪世纪自旋电子学倡议，计划征集NSF 02-036而收到的。该提案的重点是调查的技术，本地诱导，控制和检测电子自旋在半导体微结构中使用适当定位的静电栅电压。静电门很容易在亚微米尺度上定义，并且应该提供自旋电流的切换和操纵。实现这一目标的各种方法将被追求，包括（i）应用于单量子点和双量子点的门可编程核极化，以及核自旋从点到点的转移，（ii）高迁移率GaAs/AlAs外延层中的门控制自旋极化;和（iii）AlAs中的电子自旋共振（ESR）测量。结合最先进的制造技术，仔细的测量，和理论分析，建议的研究是高度跨学科的。它依赖于三名实验学家和一名工程和物理理论家的专业知识。研究生和本科生也将全面参与，他们将获得尖端材料科学和工程方面的宝贵经验和知识，重点关注新兴的、具有潜在价值的自旋电子学领域。这项工作将以普林斯顿大学为中心，其中一名研究员将在哈佛大学工作。普林斯顿大学和哈佛大学的现有设施将足以进行所有拟议的工作。申请的大部分资金将用于支持研究生。普林斯顿大学的研讨会计划确保集中的研究工作，并加强学生之间的互动，共同的研究目标。