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SBIR Phase I: Nanoporous Silica Slurry Technology for Enhanced Chemical Mechanical Planarization (CMP) of Low "K" Dielectrics

SBIR Phase I: Nanoporous Silica Slurry Technology for Enhanced Chemical Mechanical Planarization (CMP) of Low "K" Dielectrics
SBIR 第一阶段:用于增强低“K”电介质化学机械平坦化 (CMP) 的纳米多孔二氧化硅浆料技术
批准号:
0232709
负责人:
Deepika Singh
金额:
$9.99万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2003
资助国家:
美国
项目状态:
已结题
起止时间:
2003-01-01 至 2003-06-30

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中文摘要
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英文摘要
The Small Business Innovation Research (SBIR) Phase I project will synthesize novel slurries for chemical mechanical planarization (CMP) of low dielectric constant (K) materials. Standard abrasives such as silica and alumina lead to significant scratching, indenting and delamination of the soft low K surface. In this project it is proposed to use nanoporous silica based slurries in which the hardness of the particle can be controlled. In the project, synthesis of nanoporous silica particles will first be carried out followed by charcterization; next will be development of the slurry formulation followed by charcterization and finally testing against the specific needs of the CMP application.Commercially, these slurries are expected to reduce surface defects and enhance slurry stability. It is expected that major electronic manufacturing companies will use this new type of slurry. Wafer level experiments are already planned on patterned wafers in collaboration with key industrial partners.
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