SBIR Phase II: Novel Hybrid Rapid Thermal Processing (HRTP) Systems for Annealing of Advanced Silicon Devices

SBIR 第二阶段：用于先进硅器件退火的新型混合快速热处理 (HRTP) 系统

• 批准号: 0725021
• 负责人: Deepika Singh
• 金额: --
• 依托单位: SINMAT, INC.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-08-01 至 2009-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0725021&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Novel; Hybrid

This Small Business Innovation Research Phase II project focuses on development of a novel high-temperature system for processing of advanced silicon devices. Currently used rapid thermal processing (RTP) systems result in substantial dopant profile broadening because of their relatively large time constants. The development of a novel Hybrid Rapid Thermal Process (HRTP) system which combines the advantages of RTP and laser annealing will be accomplished through this project. The advantages of HRTP anneals was demonstrated in the Phase I of the project. In the Phase II project extensive thermal simulation studies will be performed to understand, optimize and scale up the process.Rapid Thermal Processing (RTP) systems are a critical part of semiconductor manufacturing operations and are used to form gate oxides, silicides and annealed ion implanted dopants for formation of ultra-shallow junctions. The market-size for these applications exceeds $500 M/year. With the rapid miniaturization of the devices, there is a strong need to develop higher ramp rate and higher temperature annealing systems to achieve the formation of ultra-shallow junctions. The proposed HRTP system is expected to fill this niche. The HRTP system can also be usedin thermal annealing of wide band gap semiconductors such as GaN and SiC as they require extremely high temperature, which cannot be achieved by traditional systems.

这个小型企业创新研究第二阶段项目专注于开发一种用于先进硅器件加工的新型高温系统。目前使用的快速热处理(RTP)系统由于其相对较大的时间常数而导致大量的掺杂剂轮廓加宽。通过该项目，将完成一种新型的混合快速热处理(HRTP)系统的开发，该系统结合了RTP和激光热处理的优点。在该项目的第一阶段中，HRTP退火层的优势得到了证明。在第二阶段项目中，将进行广泛的热模拟研究，以了解、优化和扩大工艺。快速热处理(RTP)系统是半导体制造操作的关键部分，用于形成栅氧化物、硅化物和退火离子注入的掺杂剂，以形成超浅结。这些应用的市场规模超过5亿美元/年。随着器件的快速小型化，迫切需要开发更高的斜坡率和更高的温度退火系统来实现超浅结的形成。拟议的HRTP系统有望填补这一空白。HRTP系统还可以用于GaN和碳化硅等宽带隙半导体的热退火，因为它们需要极高的温度，而这是传统系统无法实现的。