SBIR Phase II: Nanoporous Silica Slurries for Enhanced Chemical Mechanical Planarization (CMP) of Low k Dielectrics

这个小型企业创新研究二期项目旨在开发基于纳米多孔二氧化硅颗粒的独特化学机械平面化（CMP）浆料，以满足或超过80纳米及以上半导体制造节点的低k介电体的CMP需求。低k介电体（介电常数2.2 k 3.3）与铜金属线的集成有望在未来3-5年内大大降低10 GHz CMOS预期器件的RC（电阻×电容）延迟。铜/钽/低k介电材料的化学机械平面化（CMP）是困扰半导体工业的关键问题之一。低k介电体是脆弱的，容易分层和划伤（增加缺陷）。使用硬磨料的标准浆料可能不符合预期使用低k介电材料的80nm以下CMOS器件的要求。该计划建议开发并商业化基于纳米多孔二氧化硅颗粒的温和CMP浆料，该浆料具有较低的硬度和更好的稳定性。结合独特的化学配方，这些浆料有望实现比标准浆料更低的缺陷（表面划伤）和更低的应力抛光。在这个第二阶段的项目中，我们将在内部和与我们的合作伙伴（半导体芯片制造商）进行广泛的实验，以优化性能和集成问题。商业上，这项研究活动不仅在半导体制造领域，而且在许多其他领域，如生物技术和纳米技术，都有重大影响，这些领域是政府确定的美国商业未来可行性的关键领域。首先也是最重要的是，它将确保美国能够保持在CMP领域的领先地位，尽管半导体制造业的工作一直在向海外转移。由于CMP浆料是纳米颗粒技术最大的附加值应用（50%），在这一领域的卓越表现将在不久的将来为纳米技术毕业生提供就业机会，并可以直接应用他们所获得的技能。这项研究将导致更快的电子设备的创造，这反过来将有利于社会变得更经济的生产力。纳米多孔粒子技术的发展可以应用于其他几个领域，包括控制药物输送系统。

This Small Business Innovation Research Phase II project aims to develop unique chemical mechanical planarization (CMP) slurries based on nanoporous silica particles that will meet or exceed CMP needs of low k dielectrics for the 80 nm and beyond semiconductor manufacturing nodes. The integration of low k dielectrics (dielectric constant 2.2 k 3.3) with copper metal lines is expected to considerably reduce RC (resistance x capacitance) delay for 10 GHz CMOS expected devices in the next 3-5 years. One of the key issues plaguing the semiconductor industry is the chemical mechanical planarization (CMP) of copper/tantalum/low k dielectric materials. The low k dielectrics are fragile and are susceptible to both delamination and scratching (increased defectivity). Standard slurries employing hard abrasives may not meet the requirements for sub-80 nm CMOS devices which are expected to employ low k dielectric materials. The program proposes to develop & commercialize gentle CMP slurries based on nanoporous silica particles which exhibit reduced hardness and better stability. Combined with unique chemical formulations, these slurries are expected to achieve lower defectivity (surface scratching) and lower stress polishing than standard slurries. In this Phase II project extensive experiments will be conducted both in-house and with our partners (semiconductor chip manufacturers) to optimize performance and integration issues. Commercially this research activity has significant impact not only in the semiconductor manufacturing areas, but also in may other areas such as biotechnology and nanotechnology, which are the key areas identified by the government for the future viability of US business. First and foremost it will ensure US can maintain its lead in CMP, even though semiconductor manufacturing jobs have been migrating overseas. As CMP slurries is the largest value added application of the nanoparticle technology ( 50%) excellence in this area will provide employment to nanotechnology graduates in the near future and could be a direct application of the skills they have acquired. This research will lead to the creation of faster electronic devices, which will in turn benefit the society to become more economically productive. The development of nanoporous particle technology can have applications in several other areas including controlled drug delivery systems.