SBIR Phase II: Nanoporous Silica Slurries for Enhanced Chemical Mechanical Planarization (CMP) of Low k Dielectrics

SBIR 第二阶段：用于增强低 k 电介质化学机械平坦化 (CMP) 的纳米多孔二氧化硅浆料

• 批准号: 0349609
• 负责人: Deepika Singh
• 金额: $ 50万
• 依托单位: SINMAT, INC.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-03-01 至 2006-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0349609&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Nanoporous; Silica

This Small Business Innovation Research Phase II project aims to develop unique chemical mechanical planarization (CMP) slurries based on nanoporous silica particles that will meet or exceed CMP needs of low k dielectrics for the 80 nm and beyond semiconductor manufacturing nodes. The integration of low k dielectrics (dielectric constant 2.2 k 3.3) with copper metal lines is expected to considerably reduce RC (resistance x capacitance) delay for 10 GHz CMOS expected devices in the next 3-5 years. One of the key issues plaguing the semiconductor industry is the chemical mechanical planarization (CMP) of copper/tantalum/low k dielectric materials. The low k dielectrics are fragile and are susceptible to both delamination and scratching (increased defectivity). Standard slurries employing hard abrasives may not meet the requirements for sub-80 nm CMOS devices which are expected to employ low k dielectric materials. The program proposes to develop & commercialize gentle CMP slurries based on nanoporous silica particles which exhibit reduced hardness and better stability. Combined with unique chemical formulations, these slurries are expected to achieve lower defectivity (surface scratching) and lower stress polishing than standard slurries. In this Phase II project extensive experiments will be conducted both in-house and with our partners (semiconductor chip manufacturers) to optimize performance and integration issues. Commercially this research activity has significant impact not only in the semiconductor manufacturing areas, but also in may other areas such as biotechnology and nanotechnology, which are the key areas identified by the government for the future viability of US business. First and foremost it will ensure US can maintain its lead in CMP, even though semiconductor manufacturing jobs have been migrating overseas. As CMP slurries is the largest value added application of the nanoparticle technology ( 50%) excellence in this area will provide employment to nanotechnology graduates in the near future and could be a direct application of the skills they have acquired. This research will lead to the creation of faster electronic devices, which will in turn benefit the society to become more economically productive. The development of nanoporous particle technology can have applications in several other areas including controlled drug delivery systems.

该小型企业创新研究第二阶段项目旨在开发基于纳米多孔二氧化硅颗粒的独特化学机械平面化（CMP）浆料，以满足或超过80 nm及以上半导体制造节点的低k值CMP需求。预期低k Ω（介电常数2.2 k 3.3）与铜金属线的集成将显著降低RC（电阻x电容）延迟， 10 GHz CMOS器件有望在未来3-5年内上市。 铜/钽/低k介质材料的化学机械平坦化（CMP）是困扰半导体工业的关键问题之一。低介电常数层是易碎的，并且易于分层和刮擦（增加的缺陷率）。采用硬磨料的标准浆料可能不满足预期采用低k电介质材料的亚80 nm CMOS器件的要求。该计划建议开发商业化的温和CMP浆料的基础上纳米多孔二氧化硅颗粒，表现出降低硬度和更好的稳定性。 与独特的化学配方相结合，这些浆料有望实现比标准浆料更低的缺陷率（表面划痕）和更低的应力抛光。 在第二阶段项目中，将在内部和与我们的合作伙伴（半导体芯片制造商）进行广泛的实验，以优化性能和集成问题。 在商业上，这项研究活动不仅在半导体制造领域产生了重大影响，而且在生物技术和纳米技术等其他领域也产生了重大影响，这些领域是政府为美国企业未来的生存能力确定的关键领域。首先，这将确保美国能够保持其在CMP领域的领先地位，尽管半导体制造业的工作岗位一直在向海外转移。 由于CMP浆料是纳米颗粒技术（50%）的最大增值应用，在这一领域的卓越将在不久的将来为纳米技术毕业生提供就业机会，并可能直接应用他们所获得的技能。这项研究将导致更快的电子设备的创造，这反过来又有利于社会变得更加经济高效。 纳米多孔颗粒技术的发展可以应用于其他几个领域，包括药物控释系统。