SBIR Phase II: Single Step Chemical Mechanical Planarization of Copper/Ultra Low k Interconnects

SBIR 第二阶段：铜/超低 k 互连的单步化学机械平坦化

• 批准号: 0620428
• 负责人: Deepika Singh
• 金额: $ 50万
• 依托单位: SINMAT, INC.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-08-01 至 2012-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0620428&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Single; Step

This Small Business Innovation Research (SBIR) Phase II project proposes to develop and commercialize a single step chemical mechanical polishing (CMP) process for fabrication of next generation of copper based interconnects that join millions of transistors on a chip. The current state of the art copper CMP process is complicated and requires multiple steps to meet the defect quality and planarity requirements. Furthermore, existing processes create high stresses during polishing, which may not be compatible with the fragile low dielectric constant materials are now being introduced by the semiconductor industry. To address these challenges the research team proposes to develop the "soft polishing layer" concept for gentle removal of copper that does not damage the fragile dielectric layer. The use compatible chemistries and nanoparticles in the slurry allows successful development of a flexible, defect-free, single step process to fabricate copper based interconnects that will result in substantial cost savings to the semiconductor chip manufacturers. During Phase II, the company will partner with the leading edge CMP companies and chip manufacturers to address industrial scale integration issues related to development and commercialization of the single step slurry. With the impending introduction of new fragile ultra low k materials, CMP processes are expected to become more complicated and expensive, to achieve the necessary levels of performance. The successful implementation of the single step CMP process is expected to meet or exceed the technical performance levels of the 45 nm manufacturing node while decreasing the CMP manufacturing costs by up to 80% which translates to over $ 4 billion savings for the chip industry (10 X savings for the chip industry for every "X" dollar of slurry revenue). The reduction in costs is largely due to the simplification of the manufacturing process, higher throughput, increased yield, less use of capital equipment and manpower, and reduction in consumable costs. The successful completion of this project will help maintain and grow the country's leadership in nanotechnology, a key area for future health and vitality of the nation. This project will help increase the number and quality of manufacturing jobs in the country.

该小型企业创新研究（SBIR）第二阶段项目旨在开发和商业化一步化学机械抛光（CMP）工艺，用于制造下一代基于铜的互连，将数百万个晶体管连接在芯片上。现有技术的铜CMP工艺是复杂的，并且需要多个步骤来满足缺陷质量和平面性要求。此外，现有工艺在抛光期间产生高应力，这可能与现在由半导体工业引入的易碎的低介电常数材料不兼容。为了应对这些挑战，研究小组提出开发“软抛光层”概念，以温和地去除铜，而不会损坏脆弱的电介质层。在浆料中使用相容的化学物质和纳米颗粒允许成功开发灵活的、无缺陷的单步工艺来制造基于铜的互连，这将为半导体芯片制造商节省大量成本。在第二阶段，该公司将与领先的CMP公司和芯片制造商合作，解决与单步浆料的开发和商业化相关的工业规模集成问题。随着新的易碎超低k材料的即将引入，CMP工艺预计将变得更加复杂和昂贵，以实现必要的性能水平。单步CMP工艺的成功实施有望达到或超过45 nm制造节点的技术性能水平，同时将CMP制造成本降低高达80%，这意味着为芯片行业节省超过40亿美元（每“X”美元的浆料收入为芯片行业节省10倍）。成本的降低主要是由于制造过程的简化、更高的产量、增加的产量、更少地使用资本设备和人力以及消耗品成本的降低。该项目的成功完成将有助于保持和发展国家在纳米技术方面的领导地位，这是国家未来健康和活力的关键领域。该项目将有助于增加该国制造业工作的数量和质量。