CAREER: Ferroelectric Heterostructure Integration With GaAs Optoelectronic Devices

职业：铁电异质结构与砷化镓光电器件的集成

• 批准号: 0238108
• 负责人: Jamie Phillips
• 金额: $ 40万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-02-01 至 2008-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0238108&HistoricalAwards=false
• 关键词: CAREER; Ferroelectric; Heterostructure; Integration; GaAs

0238108PhillipsThis CAREER program explores the integration of ferroelectrics with semiconductor optoelectronics to advance device performance levels and to introduce new functionality for optoelectronic integrated circuits (OEIC). The integration of the unique functionality of ferroelectrics into semiconductor optoelectronics could revolutionize device and OEIC engineering. The objective of this program is to enable the integration of ferroelectrics with optoelectronics through research activities, and to prepare and train future scientists and engineers in optoelectronics through educational and outreach activities. This program will provide a greater understanding of the physics of ferroelectrics on compound semiconductors and their potential impact on optoelectronics.Motivations: Ferroelectrics offer unique physical properties including spontaneous polarization, pyroelectric, piezoelectric, and electro-optic properties. These properties offer a variety of ways of controlling electrical and optical behavior that are advantageous for optoelectronics. Semiconductor heterostructures and the use of quantum electronic confinement have been successful in providing the tools necessary to realize OEICs, though they do not possess the intrinsically strong electro-optic properties, index of refraction contrast, and polarization properties of ferroelectric oxide materials. The integration of ferroelectrics on compound semiconductors would have a tremendous impact on optoelectronics, enabling optical sources, modulators, detectors, and electronics integration with increased levels of performance and new functionality.Research: The research activities of this program will consist of four tasks: integration of ferroelectric materials with GaAs, multilayer structures and thin films with compositional gradients, polarization and electro-optic properties for use in optoelectronics, and integration of ferroelectric thin films with optoelectronic devices. Each task will progress towards the end goal of successfully inserting ferroelectric thin films with strong electro-optic and polarization properties into edge-emitting and surface-emitting integrated laser-modulator devices. The research in each task area will make a significant scientific contribution and provide a basis for the investigator to continue future research as a leader in the field. The research efforts will advance the field of OEICs through ferroelectric integration, and will provide new optoelectronic engineering possibilities through ferroelectric/semiconductor heterostructures.Teaching: Educational activities will be formally integrated in this program through the revision of an undergraduate semiconductor device course and introduction of a graduate course on multi-functional oxide materials and devices into the electrical engineering curriculum. The course modifications and additions will focus on improvement of teaching and learning through use of existing educational resources at the university. Teaching activities will be further integrated through mentoring of graduate and undergraduate students participating in the research efforts of the program. This program will include outreach activities to encourage participation of women and underrepresented minorities in science and engineering through cooperation with university societies and through implementation of optoelectronics demonstrations for local elementary schools.Broader Impacts: The integrated research and educational activities will serve to advance optoelectronics integration technology, which will impact fields enabling the information age such as fiber-optic telecommunications, data storage and processing, and optical computing. These efforts will also establish a foundation for the PI and the department to lead further research and education in ferroelectric/semiconductor integration for optoelectronics. Outreach efforts are expected to promote diversity in future optoelectronics engineers and scientists.

0238108 Phillips这个职业计划探讨了铁电体与半导体光电子的集成，以提高器件性能水平，并为光电集成电路（OEIC）引入新的功能。将铁电体的独特功能集成到半导体光电子学中可以彻底改变器件和OEIC工程。该计划的目标是通过研究活动实现铁电体与光电子学的整合，并通过教育和推广活动培养未来的光电子科学家和工程师。本课程将提供对化合物半导体上的铁电体物理及其对光电子学的潜在影响的更深入的理解。动机：铁电体提供独特的物理特性，包括自发极化，热电，压电和电光特性。这些特性提供了多种控制电学和光学行为的方法，这些方法对光电子学有利。半导体异质结构和量子电子限制的使用已经成功地提供了实现OEIC所需的工具，尽管它们不具有铁电氧化物材料的固有的强电光特性、折射率对比度和极化特性。铁电体在化合物半导体上的集成将对光电子学产生巨大的影响，使光源、调制器、探测器和电子集成具有更高的性能和新的功能。研究：该计划的研究活动将包括四个任务：铁电材料与GaAs、多层结构和具有成分梯度的薄膜的集成，用于光电子学的偏振和电光性质，以及铁电薄膜与光电子器件的集成。每一个任务都将朝着成功地将具有强电光和偏振特性的铁电薄膜插入到边缘发射和表面发射集成激光调制器器件中的最终目标前进。每个任务领域的研究都将做出重大的科学贡献，并为研究者作为该领域的领导者继续未来的研究提供基础。 该研究工作将通过铁电集成推进OEIC领域，并将通过铁电/半导体异质结构提供新的光电工程可能性。教学：教育活动将正式整合在这个程序通过修订本科半导体器件课程和引入研究生课程的多功能氧化物材料和器件到电气工程课程。课程的修改和增加将侧重于通过利用大学现有的教育资源来改善教学。教学活动将通过指导参与该计划研究工作的研究生和本科生进一步整合。该方案将包括推广活动，通过与大学社团合作以及在当地小学实施光电演示，鼓励妇女和代表性不足的少数民族参与科学和工程。综合研究和教育活动将有助于推进光电子集成技术，这将影响信息时代的领域，如光纤通信，数据存储和处理以及光学计算。这些努力也将为PI和部门奠定基础，以领导进一步的研究和教育铁电/半导体集成光电子学。外展工作预计将促进未来光电子工程师和科学家的多样性。