CAREER: Ferroelectric Heterostructure Integration With GaAs Optoelectronic Devices

0238108飞利浦这个职业计划探索铁电体与半导体光电子学的集成，以提高器件性能水平，并为光电集成电路（OEIC）引入新功能。将铁电体的独特功能集成到半导体光电子学中可以彻底改变器件和OEIC工程。该计划的目标是通过研究活动将铁电学与光电子学相结合，并通过教育和推广活动准备和培训未来的光电子学科学家和工程师。该计划将提供对化合物半导体上铁电体的物理特性及其对光电子学的潜在影响的更好理解。动机：铁电体具有独特的物理特性，包括自发极化、热释电、压电和电光特性。这些特性提供了多种控制电学和光学行为的方法，这对光电子学是有利的。半导体异质结构和量子电子约束的使用已经成功地为实现OEICs提供了必要的工具，尽管它们不具有铁电氧化物材料固有的强电光特性、折射率对比和极化特性。铁电体在化合物半导体上的集成将对光电子学产生巨大影响，使光源、调制器、探测器和电子集成具有更高的性能水平和新功能。研究：本计划的研究活动将包括四项任务：铁电材料与GaAs的集成，用于光电子学的具有成分梯度，极化和电光特性的多层结构和薄膜，以及铁电薄膜与光电器件的集成。每个任务都将朝着成功地将具有强电光和偏振特性的铁电薄膜插入到边缘发射和表面发射集成激光调制器器件的最终目标前进。在每个任务领域的研究都将做出重大的科学贡献，并为研究者作为该领域的领导者继续未来的研究提供基础。该研究将通过铁电集成推进OEICs领域的发展，并将通过铁电/半导体异质结构提供新的光电子工程可能性。教学：通过对本科半导体器件课程的修订和在电气工程课程中引入多功能氧化物材料与器件的研究生课程，将教育活动正式纳入本课程。课程的修改和增加将侧重于通过利用大学现有的教育资源来改善教学。通过指导研究生和本科生参与该项目的研究工作，教学活动将进一步整合。该计划将包括外展活动，通过与大学社团合作以及在当地小学实施光电演示，鼓励妇女和代表性不足的少数民族参与科学和工程。更广泛的影响：综合研究和教育活动将有助于推进光电集成技术，这将影响实现信息时代的领域，如光纤通信、数据存储和处理以及光计算。这些努力也将为PI和该部门领导进一步的研究和教育奠定基础，用于光电子学的铁电/半导体集成。外展工作有望促进未来光电工程师和科学家的多样性。

0238108PhillipsThis CAREER program explores the integration of ferroelectrics with semiconductor optoelectronics to advance device performance levels and to introduce new functionality for optoelectronic integrated circuits (OEIC). The integration of the unique functionality of ferroelectrics into semiconductor optoelectronics could revolutionize device and OEIC engineering. The objective of this program is to enable the integration of ferroelectrics with optoelectronics through research activities, and to prepare and train future scientists and engineers in optoelectronics through educational and outreach activities. This program will provide a greater understanding of the physics of ferroelectrics on compound semiconductors and their potential impact on optoelectronics.Motivations: Ferroelectrics offer unique physical properties including spontaneous polarization, pyroelectric, piezoelectric, and electro-optic properties. These properties offer a variety of ways of controlling electrical and optical behavior that are advantageous for optoelectronics. Semiconductor heterostructures and the use of quantum electronic confinement have been successful in providing the tools necessary to realize OEICs, though they do not possess the intrinsically strong electro-optic properties, index of refraction contrast, and polarization properties of ferroelectric oxide materials. The integration of ferroelectrics on compound semiconductors would have a tremendous impact on optoelectronics, enabling optical sources, modulators, detectors, and electronics integration with increased levels of performance and new functionality.Research: The research activities of this program will consist of four tasks: integration of ferroelectric materials with GaAs, multilayer structures and thin films with compositional gradients, polarization and electro-optic properties for use in optoelectronics, and integration of ferroelectric thin films with optoelectronic devices. Each task will progress towards the end goal of successfully inserting ferroelectric thin films with strong electro-optic and polarization properties into edge-emitting and surface-emitting integrated laser-modulator devices. The research in each task area will make a significant scientific contribution and provide a basis for the investigator to continue future research as a leader in the field. The research efforts will advance the field of OEICs through ferroelectric integration, and will provide new optoelectronic engineering possibilities through ferroelectric/semiconductor heterostructures.Teaching: Educational activities will be formally integrated in this program through the revision of an undergraduate semiconductor device course and introduction of a graduate course on multi-functional oxide materials and devices into the electrical engineering curriculum. The course modifications and additions will focus on improvement of teaching and learning through use of existing educational resources at the university. Teaching activities will be further integrated through mentoring of graduate and undergraduate students participating in the research efforts of the program. This program will include outreach activities to encourage participation of women and underrepresented minorities in science and engineering through cooperation with university societies and through implementation of optoelectronics demonstrations for local elementary schools.Broader Impacts: The integrated research and educational activities will serve to advance optoelectronics integration technology, which will impact fields enabling the information age such as fiber-optic telecommunications, data storage and processing, and optical computing. These efforts will also establish a foundation for the PI and the department to lead further research and education in ferroelectric/semiconductor integration for optoelectronics. Outreach efforts are expected to promote diversity in future optoelectronics engineers and scientists.