CAREER: Spectroscopic Studies of Interface Structure and Strain in Low-dimensional Semiconductor Heterostructures by Laser-enhanced Nuclear Magnetic Resonance

在化学部实验物理化学计划的支持下，海斯将研究半导体异质结中的界面和缺陷，例如在InP上生长的AlGaAs/GaAs量子阱或InGaP薄膜，以获得关于当前纳米结构的结构、几何形状和化学性质的原子级信息。结合光学偏振核磁共振和光学检测核磁共振方法将被用来研究界面和缺陷结构，通常被称为“激光增强核磁共振”。由于每种技术提供的信息是互补的，将两种类型的光谱学结合在一个实验中可以同时提供对材料结构和电子性质的见解。这一多学科研究计划，通过参与大学的材料科学倡议，将加强研究和教育的基础设施。该项目的研究部分将与研究生和本科生的教学工作相结合。研究生和本科生以及博士后研究助理将参与研究，从而获得技能和培训，以便在工业、学术界或政府实验室进行深造或就业。

In this NSF-CAREER project, supported by the Experimental Physical Chemistry Program of the Chemistry Division, Hayes will examine the interfaces and defects in semiconductor heterostructures, such as AlGaAs/GaAs quantum wells or thin films of InGaP grown on InP, to obtain atomic-level information about the structure, geometry and the chemical nature of nanostructures present. Combined optically-polarized NMR and optically-detected NMR methods will be used to study the interfacial and defect structures, generally termed "laser-enhanced NMR." Because the information provided by each technique is complementary, the combination of the two types of spectroscopy in a single experiment can provide insights into structure and electronic properties of the material simultaneously.This multidisciplinary research program, through participation in the University's Materials Science initiative, will enhance the infrastructure for research and education. The research component of this project will be integrated with the graduate and undergraduate teaching efforts. Graduate and undergraduate students, as well as postdoctoral research associates will participate in the research and will thereby acquire skills and training for advanced studies or employment in industry, academia, or government laboratories.