GOALI: RF Performance of Si-Based RITD for Mixed-Signal Applications

目标：用于混合信号应用的硅基 RITD 的射频性能

• 批准号: 0323657
• 负责人: Paul Berger
• 金额: $ 27万
• 依托单位: Ohio State University Research Foundation -DO NOT USE
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-08-15 至 2010-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0323657&HistoricalAwards=false
• 关键词: GOALI; RF; Performance; Si; Based

0323657BergerThe drive to develop advanced semiconductor devices and circuits is fueled bythe wealth of electronic and optical properties of heterostructures made possible by band structure engineering. Tunnel diodes (TD) can be integrated with transistors to create novel quantum nonlinear functional devices and circuits due to the unique property of a tunnel diode's negative differential resistance (NDR). Such integrated circuits have demonstrated enhanced performances in circuit speed, reduce component count and lower power consumption. Previous circuit work incorporating TDs, at places like Motorola Laboratories, has been limited to III-V compound semiconductors only. However, until recently, it was not practical to translate this to the low-cost and high production volume Si world. But recent developments in Si-based TD technology by the PI and other researchers are challenging this roadblock. One aim of this proposal is to seek ways to integrate Si-based resonant interband tunnel diodes (RITD) with Si/SiGe transistors to meet the challenges in the wireless communications by transferringthis III-V-based TD circuit technology to Si. The PI seeks to capitalize upon recent DC performance milestones achieved within his laboratory on Si-based RITDs, namely peak-to-valley current ratio (PVCR) up to 3.8 at room temperature or peak current densities Jp exceeding 150 kA/cm 2 .This project aims to boost Si wireless capabilities that could eventually lead to anentire radio on a single Si chip or other interesting fusions of digital and analog circuits. Further, tunnel diodes have been shown to be very radiation hard and were used extensively in some of the first communication satellites in the 1960's, thus lending their introduction into military and non-terrestrial applications as well. Partnering with Motorola Laboratories in the form of a Grant Opportunities of Academia in Liaison with Industry (GOALI) is testimony to the level of interest and curiosity of industry to explore this technological pathway further, before embracing it. Motorola is willing to share their circuit and system experience as well as apply their in-house analog modeling of these nonlinear Si/SiGe TDs.This project will provide an environment where students can be trained in a broaderperspective of the research process, from device physics, material and device processing, to device and circuit testing and modeling. Collaborative efforts required in this project will allow graduate and undergraduate students not only to have natural exchange and supervision with PIs, but also to have strong interactions with scientists in government and industry research laboratories, which will facilitate their acquisition of knowledge and provide an initial research experience that promotes the notion of teaming in their future careers. At Ohio State (Berger), undergraduate research is expected to play a large component in the proposed research. Discussions have already commenced with the EE Honors Program representative and the PI to ramp up towards a collective REU Site submission in Fall 2003. In lieu of this, the PI will submit requests for REU supplements as well as the REU Site request. The PI has a long and established history of using undergraduate researchers through REU supplements. Recruitment of underrepresented peoples has been and will be a facet in the PIs research projects.The technical merits of this project derive from its impact on (i) increase circuit speeddue to shortened path lengths and increased functionality, (ii) reduce component count (more computational power per unit area), (iii) lower power consumption (fewer components per logic function), (iv) compact the layout using 3-D integration of tunnel diodes above/below transistors, and (v) extend RF wireless technology.

0323657伯格驱动器开发先进的半导体器件和电路是由丰富的电子和光学性质的异质结构，使能带结构工程成为可能。隧道二极管（TD）由于其独特的负微分电阻（NDR）特性，可以与晶体管集成，形成新型的量子非线性功能器件和电路。这样的集成电路已经展示了在电路速度、减少组件数量和降低功耗方面的增强的性能。以前在摩托罗拉实验室这样的地方，采用TD的电路工作仅限于III-V族化合物半导体。然而，直到最近，将其转化为低成本和高产量的Si世界是不切实际的。 但是PI和其他研究人员最近在Si基TD技术方面的发展正在挑战这一障碍。本提案的一个目的是寻求将Si基谐振带间隧道二极管（RITD）与Si/SiGe晶体管集成的方法，以通过将这种基于III-V族的TD电路技术转移到Si来应对无线通信中的挑战。PI寻求利用最近在其实验室中在硅基RITD上实现的DC性能里程碑，即室温下峰谷电流比（PVCR）高达3.8或峰值电流密度Jp超过150 kA/cm 2。该项目旨在提高硅无线能力，最终可能导致在单个硅芯片上实现整个无线电或其他有趣的数字和模拟电路融合。此外，隧道二极管已经被证明是非常抗辐射的，并且在20世纪60年代被广泛用于一些第一批通信卫星中，从而也将它们引入军事和非地面应用中。与摩托罗拉实验室以学术界与工业界联系的赠款机会（GOALI）的形式合作，证明了工业界对进一步探索这一技术途径的兴趣和好奇心，摩托罗拉愿意分享他们的电路和系统经验，并应用他们的内部模拟建模这些非线性Si/该项目将提供一个环境，学生可以在更广泛的研究过程中，从器件物理，材料和器件加工，器件和电路测试和建模的角度进行培训。本项目所需的协作努力将使研究生和本科生不仅与PI进行自然交流和监督，而且还与政府和行业研究实验室的科学家进行强有力的互动，这将有助于他们获得知识，并提供初步的研究经验，促进他们未来职业生涯中的团队合作概念。在俄亥俄州（伯杰），本科研究预计将发挥很大的组成部分，在拟议的研究。已经开始与EE荣誉计划代表和PI进行讨论，以便在2003年秋季向REU网站提交集体申请。作为替代，PI将提交REU补充申请以及REU研究中心申请。PI通过REU补充使用本科研究人员有着悠久的历史。招募代表性不足的人已经并将成为PI研究项目的一个方面。该项目的技术优势来自其对以下方面的影响：（i）由于缩短路径长度和增加功能而提高电路速度，（ii）减少元件数量（每单位面积更多的计算能力），（iii）更低的功耗（每个逻辑功能更少的组件），（iv）使用晶体管上方/下方的隧道二极管的3-D集成来紧凑布局，以及（v）扩展RF无线技术。