Printed Plastic Low-Power NDR Electronics for the Internet of Everything

摘要：非技术性：该团队在俄亥俄州州立大学，通过一个偶然的发现下，美国国家科学基金会，是本科生的研究资金，开发和先进的一种新的有机隧道二极管使用混合结结合薄金属氧化物和基于溶液的有机半导体顶部。该专利器件是第一个使用可扩展的可打印工艺在室温下真正表现出选择性隧穿的结构。电流与电压的特性在半导体器件中是独特的，看起来像一个大写字母（N）。因此，与大多数设备不同，通过此（N）绘制的线提供三个交点。中间的是不稳定和不可用的，但是第一和第三提供了一种简单的方式来存储1位，a（0）或a（1），使用单个隧道二极管与另一个电路元件，例如第二隧道二极管或晶体管，作为负载。该项目以之前的进展为基础，建立了一个跨越两个国家（美国和芬兰）的多机构团队（韦恩州立大学、坦佩雷理工大学、阿尔托大学和Picosun）。这种薄金属氧化物隧穿势垒的特性是发现操作的关键。该项目寻求一种新的方式来存款这一层，将允许大面积沉积在柔性基板，达到一米宽。通过与芬兰工业界的合作，我们将提高美国工业的竞争力和地位，并推进有机电子、太阳能电池、电子印刷和原子层沉积技术的智能化和功能化。工业界和国际合作者的参与将扩大创新文化，并将研究成果集中于战略商业化。技术支持：俄亥俄州州立大学（OSU）提出了一个为期3年的两国（美国、芬兰）项目，以推进印刷有机电子学，特别是使用有机隧道二极管（OTD）和集成有机场效应晶体管（OFET）的电路。其独特的负微分电阻（NDR）将减少OFET器件数量，同时降低功耗。节能电路将是物联网（IoT）数万亿对象密集网络中自主供电传感器节点的关键。与坦佩雷理工大学（TUT-芬兰）和Picosun（芬兰），原子层沉积（ALD）工具制造商的国际合作将为大面积快速卷到卷（R2 R）技术提供合作机会，以原型扩大现有的基础研究，同时增强材料发现和理解。该项目的一个主要目标是与韦恩州立大学（WSU）合作，进行新型ALD前体和氧化剂的发现和工艺开发，以探索具有工程氧空位（缺陷能级、态密度等）的金属氧化物隧道势垒的非化学计量ALD。严格控制与OTD缺陷相关的隧穿过程，并因此控制基于NDR的器件性能。该团队在第一个使用室温NDR的共轭聚合物基隧道二极管电路方面取得的进展为低功耗便携式电路（逻辑、存储器和混合信号）带来了新的机会。NDR电路可以提供（i）组件数量减少（每单位面积更多的计算能力），（ii）更低的功耗（每逻辑功能更少的器件）。对社会和人类的巨大利益：1）低成本，超低功耗的自主塑料电子存储器，逻辑和无线系统; 2）先进的高K线兼容有机物有限的热预算; 3）了解缺陷及其在通过薄高K线隧道传输中的作用; 4）大面积，R2 R电子印刷，用于大批量生产。学生和国际交流：全日制研究生将直接在这里得到支持。REU补充将补充这个团队与1-2名本科生，沿着与国际科学访问。

Abstract: Non-technical: The team at Ohio State University, through an accidental discovery under NSF, is undergraduate research funding, developed and advanced a new organic tunnel diode using a hybrid junction incorporating a thin metal oxide and a solution-based organic semiconductor atop. This patented device is the first such structure to genuinely exhibit selective tunneling at room temperature using a scalable printable process. The current versus voltage characteristics are unique amongst semiconductor devices, looking like a capital letter (N). So, unlike most devices, a line drawn through this (N) provides three intersections. The middle is unstable and unusable, but the first and third provide for a simple way to store 1-bit, a (0) or a (1), using a single tunnel diode with another circuit element, such as a second tunnel diode or transistor, as the load. This project builds upon previous advances by building a multi-institutional team (Wayne State University, Tampere University of Technology, Aalto University and Picosun) spanning two countries (USA and Finland). The properties of this thin metal oxide tunneling barrier are key to the discovered operation. This project seeks a new way to deposit this layer that would permit large area deposition across flexible substrates, reaching a meter wide. Through collaborations with Finnish industry, we will increase the competitiveness and position of US industry and advance the intelligence and functionality of organic electronics, solar cells, electronic printing and atomic layer deposition technology. Participation of industry and international collaborators will broaden the culture of innovation and focus the research output towards strategic commercialization. Technical: Ohio State University (OSU) proposes a 3-year bi-national (USA, Finland) project to advance printed organic electronics, particularly using organic tunnel diodes (OTD) and circuits integrated with organic field effect transistors (OFET). Their unique negative differential resistance (NDR) will reduce OFET device count, while concurrently reducing power consumption. Energy thrifty circuits will be key for autonomously powered sensor nodes for a dense network of trillions of objects for the Internet of Things (IoT). International teaming with Tampere Univ. of Technology (TUT-Finland) and Picosun (Finland), an atomic layer deposition (ALD) tool manufacturer, will provide collaborative opportunities for large-area rapid roll-to-roll (R2R) technologies to prototypical scale-up of the existing fundamental studies while enhancing materials discovery and understanding. A key aim of this project is working with Wayne State University (WSU) for novel ALD precursor and oxidizer discovery and process development to explore non-stoichiometric ALD for metal oxide tunnel barriers with engineering oxygen vacancies (energy level of defects, density-of-states, etc.) that critically control OTD defect related tunneling processes and therefore device performance based on NDR. Advances by this team for the first conjugated polymer based tunnel diode circuitry using room temperature NDR enable new opportunities for low-power consumption portable circuitry (logic, memory and mixed-signal). NDR circuitry can provide (i) component count reduction (more computational power per unit area), (ii) lower power consumption (fewer devices per logic function). Tremendous benefits to society and humankind: 1) Low-cost, ultra-low power autonomous plastic electronic memory, logic and wireless systems; 2) Advanced high-K dielectrics compatible with the limited thermal budget of organics; 3) Understanding of defects and their role in tunneling transport through thin high-K dielectrics; 4) Large-area, R2R electronic printing for high volume production. Students and international exchange: A full-time graduate student will be directly supported here. REU supplements will supplement this team with 1-2 undergraduates, along with international scientific visitations.