High Performance Buffers for RF GaN Electronics

适用于 RF GaN 电子器件的高性能缓冲器

• 批准号: EP/N028848/1
• 负责人: Paul Tasker
• 金额: $ 31.85万
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2016
• 资助国家: 英国
• 起止时间: 2016 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FN028848%2F1
• 关键词: Performance; Buffers; RF; GaN; Electronics

Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.

目前GtR中并没有所有资助研究的摘要。这通常是因为在提交提案时不需要摘要，但也可能是因为摘要中包含个人详细信息等敏感信息。

项目成果

Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs

AlGaN/GaN-on-SiC HEMT 漏极注入击穿机制研究

• DOI: 10.1109/ted.2021.3138841
• 发表时间: 2022
• 期刊: IEEE Transactions on Electron Devices
• 影响因子: 3.1
• 作者: Yang F