NIRT: Self-Aligned and Self-Limited Quantum Dot Nanoswitches

NIRT：自对准和自限制量子点纳米开关

• 批准号: 0103248
• 负责人: Paul Berger
• 金额: --
• 依托单位: Ohio State University Research Foundation -DO NOT USE
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-07-01 至 2007-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0103248&HistoricalAwards=false
• 关键词: NIRT; Self; Aligned; Limited; Quantum

This proposal was submitted in response to the solicitation "Nanoscale Science and Engineering" (NSF 00-119). The project addresses the fabrication of quantum scale devices through the combined oxidation and etching of Si/SiGe/Si nanostructured pillars. The project aims to demonstrate the validity of nanoscale computing by developing a process technology to fashion quantum dots of a predictable size, shape and placement, suitable for mass production and simple electrical contact. The project includes specific strategies and processes to control the size and composition of the nanostructured pillars and the resulting quantum dots and oxide insulators to be formed. The research spans issues of materials science, circuits, and device fabrication and characterization; the structures to be fabricated are closely integrated with quantum level devices necessary for cellular automata circuits. Methods of high speed testing to characterize the devices as well as theoretical modeling to optimally design the structures are included. The project is highly collaborative between Ohio State, Illinois, Notre Dame, UC Riverside, the Naval Research Laboratory and Air Force Research Laboratory. %%% The project addresses basic research issues in a topical area of materials science with high technological relevance. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. The project brings together electrical engineers, material scientists, physicists, computer scientists, experimentalists, and theoreticians for the purpose of realizing advanced nanostructured quantum dot devices. The project is designed to develop strong technical, communication, and organizational/management skills in students through unique educational experiences made possible by a forefront research environment. There will be active involvement of undergraduates in the program with an emphasis on developing effective oral and written communication skills. Cross-disciplinary research and site visits to each other will enhance the educational process. The project is co-supported by the DMR/EM and ECS/EPDT Divisions/Programs.***

该提案是应“纳米科学与工程”（NSF 00-119）的要求提交的。该项目通过Si/SiGe/Si纳米结构柱的氧化和蚀刻组合来制造量子尺度器件。该项目旨在通过开发一种工艺技术来展示纳米级计算的有效性，以形成可预测尺寸，形状和位置的量子点，适合大规模生产和简单的电接触。该项目包括具体的策略和过程，以控制纳米结构柱的尺寸和成分，以及由此形成的量子点和氧化物绝缘体。该研究涵盖材料科学，电路和器件制造和表征的问题;要制造的结构与元胞自动机电路所需的量子级器件紧密结合。高速测试的方法来表征的设备，以及理论建模，以优化设计的结构包括在内。 该项目是高度合作之间的俄亥俄州，伊利诺伊州，圣母院，加州大学滨江，海军研究实验室和空军研究实验室。该项目解决了材料科学领域的基础研究问题，具有高度的技术相关性。该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。该项目汇集了电气工程师，材料科学家，物理学家，计算机科学家，实验学家和理论家，旨在实现先进的纳米结构量子点器件。该项目旨在通过前沿研究环境所带来的独特教育体验，培养学生强大的技术，沟通和组织/管理技能。将有本科生积极参与该计划，重点是发展有效的口头和书面沟通技巧。跨学科的研究和实地考察将加强教育过程。该项目由DMR/EM和ECS/EPDT部门/计划共同支持。*