High Performance Buffers for RF GaN Electronics

适用于 RF GaN 电子器件的高性能缓冲器

• 批准号: EP/N031563/1
• 负责人: Martin Kuball
• 金额: $ 96.85万
• 依托单位: University of Bristol
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2016
• 资助国家: 英国
• 起止时间: 2016 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FN031563%2F1
• 关键词: Performance; Buffers; RF; GaN; Electronics

AlGaN/GaN high electron mobility transistors (HEMTs) are a key enabling technology for future power conditioning applications in the low carbon economy, and for high efficiency military and civilian microwave systems. GaN-on-Si is highly attractive as a low cost, medium performance technology platform which has been proved to be usable even up to the W-band. The main down-sides of Si are the low bandgap and hence resistive lossy substrate especially at modest elevated temperatures, the vulnerability of the Si to unintentional doping with gallium during epitaxy causing RF losses, and the somewhat restricted power handling resulting from the relatively low thermal conductivity of the Si compared to the 4" SiC growth substrates currently used. However the cost benefits are dramatic allowing 6" or even 8" high volume wafer processing. 6" GaN-on-Si epitaxy is already available driven by the emerging GaN-on-Si power switch market, however it is optimised for high voltage, switched-mode operation. Improved RF power amplifier (PA) efficiency using GaN-on-Si, which is the focus of this proposal, would reduce the transistor temperature rise, reduce the substrate losses and deliver a low-cost high-performance technology as it would reduce the transistor temperature rise and reduce the substrate losses. The advance that is required is an optimised RF specific GaN-on-Si transistor architecture, which requires detailed understanding of electronic traps introduced into the GaN buffer of these devices by iron, carbon and carbon/iron co-doping, which is presently lacking. The key aim of this proposal is to control and model the device capacitances and conductances using novel epitaxial design of the GaN buffer, as this is key to delivering improved efficiency, gain and linearity in RF amplifiers.

AlGaN/GaN 高电子迁移率晶体管 (HEMT) 是低碳经济中未来功率调节应用以及高效军用和民用微波系统的关键使能技术。硅基氮化镓作为一种低成本、中等性能的技术平台极具吸引力，已被证明甚至可以在 W 波段使用。 Si 的主要缺点是带隙低，因此是有电阻损耗的衬底，特别是在适度升高的温度下；Si 在外延过程中容易被无意掺杂镓而导致 RF 损耗；与目前使用的 4" SiC 生长衬底相比，Si 的导热系数相对较低，导致功率处理能力受到一定限制。然而，成本效益非常显着，允许 6" 甚至 6" SiC 生长衬底。 8英寸大批量晶圆加工。在新兴的硅基氮化镓功率开关市场的推动下，6英寸硅基氮化镓外延已经可用，但它针对高电压、开关模式操作进行了优化。使用硅基氮化镓（GaN-on-Si）提高射频功率放大器（PA）效率是该提案的重点，它将降低晶体管温升，减少衬底损耗，并提供低成本高性能技术，因为它会降低晶体管温升并减少衬底损耗。所需要的进步是优化的 RF 特定 GaN-on-Si 晶体管架构，这需要详细了解通过铁、碳和碳/铁共掺杂引入这些器件的 GaN 缓冲器中的电子陷阱，而这目前是缺乏的。该提案的主要目标是使用新颖的 GaN 缓冲器外延设计来控制和建模器件电容和电导，因为这是提高射频放大器效率、增益和线性度的关键。

项目成果

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

适用于 Q 波段应用的高效 AlN/GaN HEMT，具有改进的散热性能

• DOI: 10.1142/s0129156419400032
• 发表时间: 2019
• 期刊: International Journal of High Speed Electronics and Systems
• 作者: Kabouche R

Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates

• DOI: 10.1109/led.2018.2864562
• 发表时间: 2018-10-01
• 期刊: IEEE ELECTRON DEVICE LETTERS
• 影响因子: 4.9
• 作者: Chandrasekar, Hareesh;Uren, Michael J.;Kuball, Martin
• 通讯作者: Kuball, Martin

Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

• DOI: 10.1109/tns.2018.2880287
• 发表时间: 2018-12-01
• 期刊: IEEE TRANSACTIONS ON NUCLEAR SCIENCE
• 影响因子: 1.8
• 作者: Butler, Peter A.;Uren, Michael J.;Kuball, Martin
• 通讯作者: Kuball, Martin

Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs

• DOI: 10.1109/ted.2016.2645279
• 发表时间: 2017-03-01
• 期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
• 影响因子: 3.1
• 作者: Chatterjee, Indranil;Uren, Michael J.;Kuball, Martin
• 通讯作者: Kuball, Martin

Ohmic Contact-Free Mobility Measurement in Ultra-Wide Bandgap AlGaN/AlGaN Devices

• DOI: 10.1109/led.2017.2771148
• 发表时间: 2018
• 期刊: IEEE Electron Device Letters
• 影响因子: 4.9
• 作者: Peter A. Butler;W. M. Waller;M. Uren;A. Allerman;A. Armstrong;R. Kaplar;Martin Kuball