High Performance Buffers for RF GaN Electronics

适用于 RF GaN 电子器件的高性能缓冲器

• 批准号: EP/N031563/1
• 负责人: Martin Kuball
• 金额: $ 96.85万
• 依托单位: University of Bristol
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2016
• 资助国家: 英国
• 起止时间: 2016 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FN031563%2F1
• 关键词: Performance; Buffers; RF; GaN; Electronics

AlGaN/GaN high electron mobility transistors (HEMTs) are a key enabling technology for future power conditioning applications in the low carbon economy, and for high efficiency military and civilian microwave systems. GaN-on-Si is highly attractive as a low cost, medium performance technology platform which has been proved to be usable even up to the W-band. The main down-sides of Si are the low bandgap and hence resistive lossy substrate especially at modest elevated temperatures, the vulnerability of the Si to unintentional doping with gallium during epitaxy causing RF losses, and the somewhat restricted power handling resulting from the relatively low thermal conductivity of the Si compared to the 4" SiC growth substrates currently used. However the cost benefits are dramatic allowing 6" or even 8" high volume wafer processing. 6" GaN-on-Si epitaxy is already available driven by the emerging GaN-on-Si power switch market, however it is optimised for high voltage, switched-mode operation. Improved RF power amplifier (PA) efficiency using GaN-on-Si, which is the focus of this proposal, would reduce the transistor temperature rise, reduce the substrate losses and deliver a low-cost high-performance technology as it would reduce the transistor temperature rise and reduce the substrate losses. The advance that is required is an optimised RF specific GaN-on-Si transistor architecture, which requires detailed understanding of electronic traps introduced into the GaN buffer of these devices by iron, carbon and carbon/iron co-doping, which is presently lacking. The key aim of this proposal is to control and model the device capacitances and conductances using novel epitaxial design of the GaN buffer, as this is key to delivering improved efficiency, gain and linearity in RF amplifiers.

Algan/GAN高电子移动晶体管（HEMTS）是低碳经济中未来电力条件应用以及高效率的军事和平民微波系统的关键技术。 Gan-on-Si作为一个低成本，中型性能技术平台的吸引力很有吸引力，该平台已被证明是可用的。 SI的主要侧面是较低的带隙，因此具有抵抗性损耗的底物，尤其是在适度升高的温度，SI在同际持续状态期间与胆汁无关掺杂的脆弱性，从而导致升高造成的限制性限制，但由于相对较低的允许较低的SI造成的效果与4个“ si相比相比，因此均具有相对较低的效果。 8英寸高体积晶圆处理。6“ gan-on-si同志已经由新兴的gan-on-si si开关市场驱动，但是它已针对高压，开关模式操作进行了优化。使用GAN-ON-SI（这是该提案的重点）提高了RF功率放大器（PA）效率，将降低晶体管温度的升高，降低底物损失并提供低成本的高性能技术，因为它将降低晶体管温度升高并降低底物损失。所需的进步是优化的RF特异性Gan-On-Si晶体管结构，它需要通过铁，碳和碳/铁共同培养对这些设备引入这些设备的GAN缓冲液的电子陷阱的详细了解，目前缺乏。该建议的主要目的是使用GAN缓冲液的新型外延设计来控制和建模设备电容和电导，因为这是提供提高RF放大器中提高效率，增益和线性的关键。

项目成果

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

适用于 Q 波段应用的高效 AlN/GaN HEMT，具有改进的散热性能

• DOI: 10.1142/s0129156419400032
• 发表时间: 2019
• 期刊: International Journal of High Speed Electronics and Systems
• 作者: Kabouche R

Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates

• DOI: 10.1109/led.2018.2864562
• 发表时间: 2018-10-01
• 期刊: IEEE ELECTRON DEVICE LETTERS
• 影响因子: 4.9
• 作者: Chandrasekar, Hareesh;Uren, Michael J.;Kuball, Martin
• 通讯作者: Kuball, Martin

Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

• DOI: 10.1109/tns.2018.2880287
• 发表时间: 2018-12-01
• 期刊: IEEE TRANSACTIONS ON NUCLEAR SCIENCE
• 影响因子: 1.8
• 作者: Butler, Peter A.;Uren, Michael J.;Kuball, Martin
• 通讯作者: Kuball, Martin

Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs

• DOI: 10.1109/ted.2016.2645279
• 发表时间: 2017-03-01
• 期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
• 影响因子: 3.1
• 作者: Chatterjee, Indranil;Uren, Michael J.;Kuball, Martin
• 通讯作者: Kuball, Martin

Ohmic Contact-Free Mobility Measurement in Ultra-Wide Bandgap AlGaN/AlGaN Devices

• DOI: 10.1109/led.2017.2771148
• 发表时间: 2018
• 期刊: IEEE Electron Device Letters
• 影响因子: 4.9
• 作者: Peter A. Butler;W. M. Waller;M. Uren;A. Allerman;A. Armstrong;R. Kaplar;Martin Kuball