NIRT: Devices and Architectures for Neuromorphic Circuits with Nanoelectronic Components

点击翻译按钮获取中文摘要

Devices and Architectures for Neuromorphic Circuits with Nanoelectronic ComponentsThis proposal was received in response to Nanoscale Science and Engineering initiative, NSF 03-043, category NIRT. Preliminary studies indicate that hybrid semiconductor/molecular ("CMOL") circuits may serve as a basis for neuromorphic networks ("CrossNets") capable of advanced mixed-signal information processing with unprecedented density (beyond 1012 active devices per cm2) and performance (up to 1020 elementary operations per second per cm2) at acceptable power consumption (below 100 W/cm2). The project addresses two key issues of the CMOL CrossNet development: (i) experimental study of single-molecule latching switches self-assembled on prefabricated metallic nanowire structures, and characterization of transport properties of these components, and (ii) development of advanced architectures for digital and mixed-signal CMOL circuits, including digital processors and mixed-signal neuromorphic networks. The exponential progress of silicon digital technology is expected to run, some time during the next decade, into the "red brick wall" of fundamental physical and technical limitations. The project will explore one possible direction to extend the growth to nanoscale devices, by transferring from purely semiconductor digital chips to hybrid semiconductor/molecular integrated circuits. In such circuits the simplest and most numerous devices would be chemically synthesized and then self-assemble, from solution, on silicon chips with prefabricated nanowire fabrics. This project addresses two key issues of this new exciting field: the synthesis and self-assembly of molecular devices and the development of innovative, bio-inspired architectures for future hybrid circuits.