ECCS-EPSRC - Advanced III-N Devices and Circuit Architectures for mm-Wave Future-Generation Wireless Communications
ECCS-EPSRC - Advanced III-N Devices and Circuit Architectures for mm-Wave Future-Generation Wireless Communications
批准号:
EP/X012123/1
负责人:
Martin Kuball
金额:
$48.74万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2023
资助国家:
英国
项目状态:
未结题
起止时间:
2023 至 --
中文摘要
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英文摘要
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Van der Waals Ga2O3 functional materials epitaxy: Revolutionary power electronics
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资助金额:$25.67万
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财政年份:2023
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FINER: Future thermal Imaging with Nanometre Enhanced Resolution
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批准号:EP/V057626/1
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资助金额:$88.06万
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财政年份:2022
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负责人:Martin Kuball
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Materials and Devices for Next Generation Internet (MANGI)
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批准号:EP/R029393/1
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财政年份:2018
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Sub-micron 3-D Electric Field Mapping in GaN Electronic Devices
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财政年份:2018
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负责人:Martin Kuball
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依托单位:
Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs
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批准号:EP/P00945X/1
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资助金额:$551.14万
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财政年份:2017
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负责人:Martin Kuball
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Quantitative non-destructive nanoscale characterisation of advanced materials
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批准号:EP/P013562/1
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资助金额:$18.03万
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财政年份:2017
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负责人:Martin Kuball
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依托单位:
High Performance Buffers for RF GaN Electronics
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批准号:EP/N031563/1
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项目类别:Research Grant
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资助金额:$96.85万
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财政年份:2016
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负责人:Martin Kuball
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依托单位:
GaN Electronics: RF Reliability and Degradation Mechanisms
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批准号:EP/K026232/1
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资助金额:$68.85万
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财政年份:2014
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负责人:Martin Kuball
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依托单位:
Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation
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批准号:EP/K024345/1
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资助金额:$50.1万
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财政年份:2013
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负责人:Martin Kuball
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依托单位:
Novel Sub-Threshold Methodologies for GaN Electronic Devices: A Study of Device Reliability and Degradation Mechanisms
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批准号:EP/I033165/1
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资助金额:$52.84万
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财政年份:2011
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依托单位:
Development of an integrated optical E-Probe for GaN power transistor reliability analysis
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财政年份:2010
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负责人:Martin Kuball
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依托单位:
Novel Thermal Management of Power Electronic Devices: High Power High Frequency Planar Gunn Diodes
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批准号:EP/H011366/1
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资助金额:$35.72万
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财政年份:2010
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依托单位:
Fabrication of first 337 nm laser diodes for biological applications
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批准号:EP/F033826/1
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财政年份:2008
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负责人:Martin Kuball
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依托单位:
NSF: An investigation into the properties of B12As2, B4C and their heterostructures
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负责人:Martin Kuball
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依托单位:
Novel Time-Resolved Thermal Imaging: AlGaN/GaN Heterostructure Field Effect Transistors
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批准号:EP/D045304/1
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依托单位:
海外基金