IMR: Acquisition of Cryogenic STM Head and Electronics for Education and Research in Spintronic Materials
IMR:收购低温 STM 头和电子设备,用于自旋电子材料的教育和研究
基本信息
- 批准号:0414650
- 负责人:
- 金额:$ 17.66万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2004
- 资助国家:美国
- 起止时间:2004-08-01 至 2006-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
There has been a recent surge of interest in dilute magnetic semiconductors due to their potential application as 'spintronic' materials. The emerging field of spintronics is based upon the idea of harnessing the electron spin to make functional devices. This award from the Instrumentation for Materials Research program will be used to procure a commercially available low temperature scanning tunneling microscope (STM) head and electronics and optimize it to perform as an ultra high vacuum (UHV), 5K, spin-polarized STM. The instrument will be used to study the electronic properties of dilute magnetic semiconductors. Spin-polarized spectroscopy will provide important data on the spatial distribution of spins in these materials. It is anticipated that experiments will shed some light on the chief ingredients required to make up a theory that successfully explains ferromagnetism in the magnetic semiconductors and might point scientists in the direction of how room temperature spintronic materials can be obtained. The instrument will be used in one-day outreach program on nanoscience geared towards middle school girls. There has been a recent surge of interest in dilute magnetic semiconductors due to their potential application as 'spintronic' materials. The emerging field of spintronics is based upon the idea of harnessing the electron spin to make functional devices. If we could successfully generate, manipulate and detect spin-polarized currents, a new generation of devices will emerge that will be faster and will require lower power. This award from the Instrumentation for Materials Research program will allow Boston College to acquire a low temperature scanning tunneling microscope (STM) head and electronics and optimize it to perform as an ultra high vacuum, spin-polarized STM. With a low temperature STM researchers can image surfaces with atomic resolution, manipulate atoms to form artificial structures, and measure a very important property of materials, the local density of states (LDOS). This instrument will be used to study dilute magnetic semiconductors. Dedicated STM research on dilute magnetic semiconductors will point the way towards making spintronic technology viable. The outreach program is aimed at decreasing the substantially large gender-gap for women in physics and engineering. A recurring theme in all outreach programs will be to generate excitement for physics and technology by exposure to the marvels of nanoscience and the potential for future applications.
由于其潜在用作“ Spintronic”材料,最近人们对稀磁半导体引起了人们的兴趣。 Spintronics的新兴领域基于利用电子旋转以制造功能设备的想法。该材料仪器研究计划的奖项将用于购买市售的低温扫描隧道显微镜(STM)头和电子设备,并优化其作为超高真空(UHV),5K,自旋旋转的STM。该仪器将用于研究稀磁半导体的电子特性。自旋光谱光谱法将提供有关这些材料中旋转的空间分布的重要数据。预计实验会阐明构成一种理论所需的主要成分,该理论成功地解释了磁性半导体中的铁磁磁性,并可能将科学家指向如何获得室温旋转材料的方向。该乐器将用于一日外展计划,该计划针对中学女孩。 由于其潜在用作“ Spintronic”材料,最近人们对稀磁半导体引起了人们的兴趣。 Spintronics的新兴领域基于利用电子旋转以制造功能设备的想法。 如果我们能够成功生成,操纵和检测自旋极性电流,那么新一代的设备将出现,这将更快,需要较低的功率。材料仪器研究计划的奖项将使波士顿学院能够获得低温扫描隧道显微镜(STM)头和电子设备,并优化其作为超高真空的Spin Polarpolized STM的性能。使用低温,STM研究人员可以通过原子分辨率对表面进行成像,操纵原子以形成人工结构,并测量材料的非常重要的特性,即状态的局部密度(LDOS)。该仪器将用于研究稀释磁性半导体。关于稀释磁性半导体的专用STM研究将指向使Spintronic技术可行的道路。宣传计划旨在减少物理和工程女性的性别差距大大较大。在所有外展计划中,反复出现的主题将是通过暴露于纳米科学的奇迹和未来应用的潜力来引起物理和技术的兴奋。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Vidya Madhavan其他文献
PP-116 Profile of occult hepatitis B virus infection in an area with intermediate prevalence of HBV infection
- DOI:
10.1016/s1201-9712(09)60510-5 - 发表时间:
2009-08-01 - 期刊:
- 影响因子:
- 作者:
Shanmugam Saravanan;Vijayakumar Velu;Vidya Madhavan;Kailapuri G. Murugavel;Pachamuthu Balakrishnan;Sunil S. Solomon;Nagalingeswaran Kumarasamy;Suniti Solomon;Sadras P. Thyagarajan - 通讯作者:
Sadras P. Thyagarajan
Spin-selective tunneling from nanowires of the candidate topological Kondo insulator SmB6
候选拓扑近藤绝缘体 SmB6 纳米线的自旋选择性隧道效应
- DOI:
10.1126/science.abj8765 - 发表时间:
2022-09 - 期刊:
- 影响因子:56.9
- 作者:
Anuva Aishwarya;Zhuozhen Cai;Arjun Raghavan;Marisa Romanelli;Xiaoyu Wang;Xu Li;G. D. Gu;Mark Hirsbrunner;Taylor Hughes;刘飞;Lin Jiao;Vidya Madhavan - 通讯作者:
Vidya Madhavan
Vidya Madhavan的其他文献
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{{ truncateString('Vidya Madhavan', 18)}}的其他基金
Quasiparticles in Mott Insulators, Strange Metals and Spin liquids probed by Low Temperature Spectroscopic-Imaging Scanning Tunneling Microscopy
通过低温光谱成像扫描隧道显微镜探测莫特绝缘体、奇异金属和自旋液体中的准粒子
- 批准号:
2003784 - 财政年份:2020
- 资助金额:
$ 17.66万 - 项目类别:
Continuing Grant
Collaborative Research: Strain Based Devices for Switches and Memory Applications
合作研究:用于开关和存储器应用的基于应变的器件
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1711875 - 财政年份:2017
- 资助金额:
$ 17.66万 - 项目类别:
Standard Grant
Nanoscale Studies of Surface Doping Effects and Superconductivity in Fe-based Superconductors and Iridates
铁基超导体和铱酸盐的表面掺杂效应和超导性的纳米研究
- 批准号:
1610143 - 财政年份:2016
- 资助金额:
$ 17.66万 - 项目类别:
Continuing Grant
DMREF: Collaborative Research: Accelerated discovery of chalcogenides for enhanced functionality in magnetotransport, multiorbital superconductivity, and topological applications
DMREF:合作研究:加速发现硫属化物以增强磁输运、多轨道超导和拓扑应用的功能
- 批准号:
1629068 - 财政年份:2016
- 资助金额:
$ 17.66万 - 项目类别:
Standard Grant
Development and nanoscale characterization of back-gated topological devices
背栅拓扑器件的开发和纳米级表征
- 批准号:
1630104 - 财政年份:2015
- 资助金额:
$ 17.66万 - 项目类别:
Continuing Grant
Emergent Physics in Correlated, Spin-orbit Coupled Materials
相关自旋轨道耦合材料中的新兴物理
- 批准号:
1621145 - 财政年份:2015
- 资助金额:
$ 17.66万 - 项目类别:
Continuing Grant
CAREER Workshop for Materials Scientists & Engineers
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- 批准号:
1340410 - 财政年份:2013
- 资助金额:
$ 17.66万 - 项目类别:
Standard Grant
Emergent Physics in Correlated, Spin-orbit Coupled Materials
相关自旋轨道耦合材料中的新兴物理
- 批准号:
1305647 - 财政年份:2013
- 资助金额:
$ 17.66万 - 项目类别:
Continuing Grant
Development and nanoscale characterization of back-gated topological devices
背栅拓扑器件的开发和纳米级表征
- 批准号:
1232105 - 财政年份:2012
- 资助金额:
$ 17.66万 - 项目类别:
Continuing Grant
CAREER: Spin-Spin Interactions, Magnetic Order and Low-Dimensional Effects in Magnetic Semiconductors: Education and Research at the Nanoscale with Spin-Polarized STM
职业:磁性半导体中的自旋-自旋相互作用、磁序和低维效应:自旋极化 STM 的纳米级教育和研究
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0645299 - 财政年份:2007
- 资助金额:
$ 17.66万 - 项目类别:
Continuing Grant
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