Development and nanoscale characterization of back-gated topological devices
背栅拓扑器件的开发和纳米级表征
基本信息
- 批准号:1630104
- 负责人:
- 金额:$ 4.75万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2015
- 资助国家:美国
- 起止时间:2015-07-01 至 2016-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The objective of this proposal is to establish the methodology to perform back-gated scanning tunneling microscopy on topological insulators, study these materials on a local scale with spectroscopy and gating, and to explore candidate materials for two-dimensional topological insulators. While gated STM has been highly successful in studying graphene, it has yet to be achieved in topological insulators. The intellectual merit is the following. The ability to gate while performing STM will provide a tremendously powerful control knob to manipulate the properties of topological insulators and explore the role of interactions. The discovery of ultra thin films of topological insulators will be important to realizing the quantum spin hall effect. The broader impacts are the following. Gated devices will provide the ability to position the Fermi energy near the Dirac point or away from the bulk bands and into the most interesting regimes for future applications. The edge modes at domain wall boundaries in 2D topological insulators are potentially useful for realizing one-dimensional dissipationless spin transport. Undergraduates, graduate students and post-docs will be trained on materials and instruments at the forefront of today?s research. The PI?s integrated outreach and education activities will expose talented high school students to cutting edge research. The program to effectively mentor post-doctoral scholars in the department will impact the training of future scientists. The PI?s ongoing collaboration with the Lynch School of Education will have a real measurable impact on the training and numbers of science teachers in middle- and high schools in urban areas.
本提案的目的是建立拓扑绝缘体背门控扫描隧道显微镜的方法,在局部尺度上用光谱学和门控研究这些材料,并探索二维拓扑绝缘体的候选材料。虽然门控STM在研究石墨烯方面非常成功,但在拓扑绝缘体中尚未实现。智力上的优点如下。在执行STM的同时进行门控的能力将提供一个非常强大的控制旋钮来操纵拓扑绝缘体的属性并探索相互作用的作用。拓扑绝缘体超薄膜的发现对实现量子自旋霍尔效应具有重要意义。更广泛的影响如下。门控器件将提供将费米能定位在狄拉克点附近或远离体能带的能力,并为未来的应用提供最有趣的机制。二维拓扑绝缘体中畴壁边界的边缘模对于实现一维无耗散自旋输运具有潜在的应用价值。本科生、研究生和博士后将接受当今最前沿的材料和仪器培训?的研究。私家侦探?的综合推广和教育活动将使有才华的高中生接触尖端研究。有效指导该部门博士后学者的计划将影响未来科学家的培训。私家侦探?学校与林奇教育学院的持续合作将对城市地区初中和高中科学教师的培训和数量产生真实的可衡量的影响。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Vidya Madhavan其他文献
Plasmons at the surface
表面等离子体激元
- DOI:
10.1038/nnano.2013.157 - 发表时间:
2013-08-05 - 期刊:
- 影响因子:34.900
- 作者:
Yoshinori Okada;Vidya Madhavan - 通讯作者:
Vidya Madhavan
Floquet–Bloch manipulation of the Dirac gap in a topological antiferromagnet
拓扑反铁磁体中狄拉克能隙的 Floquet-Bloch 操纵
- DOI:
10.1038/s41567-024-02769-6 - 发表时间:
2025-01-21 - 期刊:
- 影响因子:18.400
- 作者:
Nina Bielinski;Rajas Chari;Julian May-Mann;Soyeun Kim;Jack Zwettler;Yujun Deng;Anuva Aishwarya;Subhajit Roychowdhury;Chandra Shekhar;Makoto Hashimoto;Donghui Lu;Jiaqiang Yan;Claudia Felser;Vidya Madhavan;Zhi-Xun Shen;Taylor L. Hughes;Fahad Mahmood - 通讯作者:
Fahad Mahmood
Magnetic-field-sensitive charge density waves in the superconductor UTe2
超导体 UTe2 中对磁场敏感的电荷密度波
- DOI:
10.1038/s41586-023-06005-8 - 发表时间:
2023-06-28 - 期刊:
- 影响因子:48.500
- 作者:
Anuva Aishwarya;Julian May-Mann;Arjun Raghavan;Laimei Nie;Marisa Romanelli;Sheng Ran;Shanta R. Saha;Johnpierre Paglione;Nicholas P. Butch;Eduardo Fradkin;Vidya Madhavan - 通讯作者:
Vidya Madhavan
PP-116 Profile of occult hepatitis B virus infection in an area with intermediate prevalence of HBV infection
- DOI:
10.1016/s1201-9712(09)60510-5 - 发表时间:
2009-08-01 - 期刊:
- 影响因子:
- 作者:
Shanmugam Saravanan;Vijayakumar Velu;Vidya Madhavan;Kailapuri G. Murugavel;Pachamuthu Balakrishnan;Sunil S. Solomon;Nagalingeswaran Kumarasamy;Suniti Solomon;Sadras P. Thyagarajan - 通讯作者:
Sadras P. Thyagarajan
Spin-selective tunneling from nanowires of the candidate topological Kondo insulator SmB6
候选拓扑近藤绝缘体 SmB6 纳米线的自旋选择性隧道效应
- DOI:
10.1126/science.abj8765 - 发表时间:
2022-09 - 期刊:
- 影响因子:56.9
- 作者:
Anuva Aishwarya;Zhuozhen Cai;Arjun Raghavan;Marisa Romanelli;Xiaoyu Wang;Xu Li;G. D. Gu;Mark Hirsbrunner;Taylor Hughes;刘飞;Lin Jiao;Vidya Madhavan - 通讯作者:
Vidya Madhavan
Vidya Madhavan的其他文献
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{{ truncateString('Vidya Madhavan', 18)}}的其他基金
Quasiparticles in Mott Insulators, Strange Metals and Spin liquids probed by Low Temperature Spectroscopic-Imaging Scanning Tunneling Microscopy
通过低温光谱成像扫描隧道显微镜探测莫特绝缘体、奇异金属和自旋液体中的准粒子
- 批准号:
2003784 - 财政年份:2020
- 资助金额:
$ 4.75万 - 项目类别:
Continuing Grant
Collaborative Research: Strain Based Devices for Switches and Memory Applications
合作研究:用于开关和存储器应用的基于应变的器件
- 批准号:
1711875 - 财政年份:2017
- 资助金额:
$ 4.75万 - 项目类别:
Standard Grant
Nanoscale Studies of Surface Doping Effects and Superconductivity in Fe-based Superconductors and Iridates
铁基超导体和铱酸盐的表面掺杂效应和超导性的纳米研究
- 批准号:
1610143 - 财政年份:2016
- 资助金额:
$ 4.75万 - 项目类别:
Continuing Grant
DMREF: Collaborative Research: Accelerated discovery of chalcogenides for enhanced functionality in magnetotransport, multiorbital superconductivity, and topological applications
DMREF:合作研究:加速发现硫属化物以增强磁输运、多轨道超导和拓扑应用的功能
- 批准号:
1629068 - 财政年份:2016
- 资助金额:
$ 4.75万 - 项目类别:
Standard Grant
Emergent Physics in Correlated, Spin-orbit Coupled Materials
相关自旋轨道耦合材料中的新兴物理
- 批准号:
1621145 - 财政年份:2015
- 资助金额:
$ 4.75万 - 项目类别:
Continuing Grant
CAREER Workshop for Materials Scientists & Engineers
材料科学家职业研讨会
- 批准号:
1340410 - 财政年份:2013
- 资助金额:
$ 4.75万 - 项目类别:
Standard Grant
Emergent Physics in Correlated, Spin-orbit Coupled Materials
相关自旋轨道耦合材料中的新兴物理
- 批准号:
1305647 - 财政年份:2013
- 资助金额:
$ 4.75万 - 项目类别:
Continuing Grant
Development and nanoscale characterization of back-gated topological devices
背栅拓扑器件的开发和纳米级表征
- 批准号:
1232105 - 财政年份:2012
- 资助金额:
$ 4.75万 - 项目类别:
Continuing Grant
CAREER: Spin-Spin Interactions, Magnetic Order and Low-Dimensional Effects in Magnetic Semiconductors: Education and Research at the Nanoscale with Spin-Polarized STM
职业:磁性半导体中的自旋-自旋相互作用、磁序和低维效应:自旋极化 STM 的纳米级教育和研究
- 批准号:
0645299 - 财政年份:2007
- 资助金额:
$ 4.75万 - 项目类别:
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IMR: Acquisition of Cryogenic STM Head and Electronics for Education and Research in Spintronic Materials
IMR:收购低温 STM 头和电子设备,用于自旋电子材料的教育和研究
- 批准号:
0414650 - 财政年份:2004
- 资助金额:
$ 4.75万 - 项目类别:
Standard Grant
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