SBIR Phase II: Microdisplays Based on III-Nitride Wide Band Gap Semiconductors

SBIR 第二阶段：基于 III 族氮化物宽带隙半导体的微型显示器

• 批准号: 0450314
• 负责人: Zhaoyang Fan
• 金额: --
• 依托单位: III-N TECHNOLOGY, INC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-02-01 至 2007-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0450314&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Microdisplays; Based

The goal of this SBIR Phase II project is to bring the demonstrated Gallium Nitride (GaN) microdisplay technology to industrial maturity and to final commercialization levels. The project's goal will be accomplished by further optimizing the microdisplay device structural design and fabrication process based on the demonstrative results obtained in Phase I. Based on high-efficiency semiconductor micro-light-emitting diode (microLED) array technology, the GaN microdisplay is the first of its kind based on semiconductor LEDs. Specifically, by the hybrid integration of GaN microLED arrays with Si CMOS driver circuits through flip-chip bonding, active matrix addressable GaN microdisplays will have a compact size and will be able to support more information content and movie display due to their high pixel filling factor, uniformity, luminance, and power efficiency. The unique intrinsic properties of GaN microLEDs - high brightness ( 10 microwatt optical output power for microLEDs of 18 micrometer in diameter), wide viewing angle (~ 160 degrees), fast response time ( 1 ns), and high thermal and vibrational resistance, make GaN microdisplays a perfect solution for environmentally demanding applications such as head-up displays (HUD) in modern vehicles and aircrafts, head-mounted displays (HMD) for firefighters and other rescue operatives, and hand-held mini-projectors for field applications.Microdisplays have a small size (typically less than 1 inch diagonal) with a resolution from low end to above XVGA format. They are magnified by optics to form enlarged virtual or projected images for viewing by a user. Microdisplays can be used in a variety of devices such as head-mounted displays, video headsets, camcorder viewfinders, projection TV, head-up displays, etc. and have many commercial applications. GaN microdisplay, with its superior performance over other microdisplay technologies, is especially suitable for environmentally demanding applications that require high brightness, high reliability, and wide operating temperature range. With a slight modification of the material composition, GaN microLED arrays developed here can vary the emitted wavelength from the green to the ultraviolet range, which is very suitable for fluorescence analysis used in new type chemical-biology agent detector array or DNA/protein microchips. The GaN microLED array also has the potential for applications such as optical links and parallel computing. Other applications also include spatially resolved optical studies of biological, medical, and health care systems. The research will also enrich the general knowledge of wide bandgap semiconductor micro- and nano-photonics.

该SBIR第二阶段项目的目标是将所展示的氮化镓（GaN）微显示技术推向工业成熟和最终商业化水平。在第一阶段示范成果的基础上，进一步优化微显示器件的结构设计和制造工艺，实现本项目的目标。基于高效半导体微发光二极管（microLED）阵列技术，GaN微显示器是首款基于半导体LED的微显示器。具体地，通过GaN微LED阵列与Si CMOS驱动器电路通过倒装芯片接合的混合集成，有源矩阵可寻址GaN微显示器将具有紧凑的尺寸，并且由于其高像素填充因子、均匀性、亮度和功率效率，将能够支持更多的信息内容和电影显示。GaN微发光二极管的独特固有特性-高亮度（对于直径为18微米的microLED，10微瓦的光输出功率），宽视角（~ 160度）、快速响应时间（1 ns）以及高耐热性和耐振动性，使GaN微显示器成为环境要求苛刻的应用的完美解决方案，例如现代车辆和飞机中的平视显示器（HUD），用于消防员和其他救援人员的头戴式显示器（HMD），以及用于现场应用的手持迷你投影仪。微型显示器具有小尺寸（通常小于1英寸对角线），分辨率从低端到XVGA格式以上。它们被光学放大以形成放大的虚拟或投影图像以供用户观看。微显示器可用于各种装置中，例如头戴式显示器、视频头戴式耳机、可携式摄像机取景器、投影TV、平视显示器等，且具有许多商业应用。GaN微显示器凭借其优于其他微显示器技术的上级性能，特别适合于要求高亮度、高可靠性和宽工作温度范围的环境苛刻应用。通过对材料成分的微小改变，GaN微发光二极管阵列可以在绿色和紫外光范围内发光，非常适合于新型生化试剂检测器阵列或DNA/蛋白质微芯片的荧光分析。GaN microLED阵列还具有光链路和并行计算等应用的潜力。其他应用还包括生物学、医学和卫生保健系统的空间分辨光学研究。本研究也将丰富宽禁带半导体微纳光子学的一般知识。