Electrically Controlled Metal-Insulator Transition and Its Terahertz Applications

电控金属-绝缘体转变及其太赫兹应用

• 批准号: 1128644
• 负责人: Zhaoyang Fan
• 金额: $ 39万
• 依托单位: Texas Tech University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-09-01 至 2014-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1128644&HistoricalAwards=false
• 关键词: Electrically; Controlled; Metal; Insulator; Transition

Overview: We propose to investigate dramatic changes in electronic and photonicproperties of new functional devices based on the reversible metal-insulator transition(MIT) of vanadium dioxide. The electrical resistivity of VO2 changes by 4 to 5 orders.Variations in refractive index exceed 15%, giving an index contrast of greater than 3relative to free space. This unique combination of properties motivates the study of itsphase transition mechanisms, control of its properties, and development of terahertz(THz) functional components.Intellectual Merit: We will explore the fundamental physics of VO2 phase transition,particularly when driven electrically in pulsed current mode or in gate electric-field mode,and develop new functional devices for THz switching and modulation applications withthe aim of reconfigurable manipulation. Through the study of phase transitionmechanisms and factors to influence the transition ?speed? we will engineer the materialstructure to achieve abrupt ?digital? switching and controllable percolative phasetransition for ?analog? modulation. The result will provide fundamental understanding ofelectrically controlled metal-insulator transition and promote the application of phasetransition-based materials for electronic and photonic applications.Broader Impact: Study of phase transitions will provide new opportunities to achieveinnovative functional devices. These devices will exhibit unprecedented operationalprinciples for electronic and photonic applications, in addition to fundamental scientificunderstanding. The proposed components will find broad applications in THz technology.The project provides excellent opportunities for interdisciplinary research education andtraining. Outreach efforts will attract new students, especially those fromunderrepresented groups, to science and engineering fields.

概述：我们建议研究基于二氧化钒的可逆金属-绝缘体转变(MIT)的新功能器件的电子和光性质的巨大变化。VO2的电阻率变化4到5个数量级，折射率变化超过15%，相对于自由空间的折射率对比度大于3。这种独特的特性组合推动了对其相变机理的研究，对其特性的控制，以及太赫兹(THz)功能元件的开发。智能优势：我们将探索VO2相变的基本物理，特别是在脉冲电流模式或栅极电场模式下驱动时，并开发用于太赫兹开关和调制应用的新功能器件，目的是可重构操纵。通过对相变机理及影响相变速度、相变速度、相变速度等因素的研究。我们将设计材料结构以实现突如其来的数字化？模拟？的开关和可控渗流相移？调制。这一结果将提供对电控金属-绝缘体转变的基本了解，并促进相变材料在电子和光子应用中的应用。广泛的影响：相变的研究将为实现创新的功能器件提供新的机会。除了基本的科学理解外，这些设备还将展示前所未有的电子和光子应用的操作原理。建议的组件将在太赫兹技术中得到广泛的应用。该项目为跨学科研究、教育和培训提供了极好的机会。外展工作将吸引新学生，特别是那些来自代表性不足群体的学生，进入科学和工程领域。