Investigation of Semiconductors Under Extreme Strain for High Strain Nanoscale Piezoresistive Sensors and Next Generation CMOS

针对高应变纳米级压阻传感器和下一代 CMOS 的极端应变半导体的研究

• 批准号: 0524316
• 负责人: Toshikazu Nishida
• 金额: --
• 依托单位: University of Florida
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2005
• 资助国家: 美国
• 起止时间: 2005-09-01 至 2009-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0524316&HistoricalAwards=false
• 关键词: Investigation; Semiconductors; Under; Extreme; Strain

The objective of this research to investigate the common transduction physics of micromachined piezoresistive sensors and state-of-the-art strained semiconductor complementary metal-oxide-semiconductor (CMOS) technology. The approach is to experimentally investigate piezoresistance in p- and n-type silicon and germanium at much higher stresses ( 1 GPa) than previously characterized, to explore the fundamental contributions to piezoresistivity at these high stresses, and to elucidate electrical reliability tradeoffs under these extreme conditions. Successful completion of the research objectives will provide fundamental understanding of the mechanisms of mobility enhancement in nano-scale devices at high stresses where stress-dependent scattering and quantum confinement affect the carrier transport and will identify stress limits above which leakage, tunneling, and 1/f noise become detrimental. An imminent need exists for more precise modeling and better understanding of piezoresistance in sensors and strained semiconductors. Such understanding may facilitate a new era of convergence of high precision sensors and nano-scale CMOS system on chip. A guiding principle for the education plan is to integrate research into continuing education for K-12 teachers who are at the frontline for preparing future scientists and engineers to succeed at universities and contribute to society. In collaboration with the stakeholders including the student faculty advisory committee, teachers, and administration, best practices will be investigated for establishing workable interactions between time-constrained teachers and staff. It is hoped that the convergence between precision sensors and nanoscale CMOS will provide an inspiring vehicle for sparking interest among students and teachers.

本研究的目的是探讨微机械压阻式传感器和最先进的应变半导体互补金属氧化物半导体（CMOS）技术的共同转导物理。 该方法是实验研究压阻在p型和n型硅和锗在更高的应力（1 GPa）比以前的特点，探索在这些高应力的压阻的基本贡献，并阐明在这些极端条件下的电气可靠性权衡。 研究目标的成功完成将提供在高应力下的纳米级器件中的迁移率增强机制的基本理解，其中应力相关散射和量子限制影响载流子输运，并将确定应力极限，超过该极限，泄漏，隧穿和1/f噪声变得有害。 迫切需要更精确的建模和更好地了解传感器和应变半导体中的压阻。 这种理解可能会促进高精度传感器和纳米级CMOS芯片上系统融合的新时代。 教育计划的指导原则是将研究纳入K-12教师的继续教育，他们处于培养未来科学家和工程师在大学取得成功并为社会做出贡献的第一线。 在与利益相关者，包括学生教师咨询委员会，教师和管理，最佳做法将进行调查，建立时间有限的教师和工作人员之间的可行的互动。希望精密传感器和纳米CMOS之间的融合将为激发学生和教师的兴趣提供一个鼓舞人心的工具。