A metal route to graphene synthesis for electronic devices

电子器件石墨烯合成的金属路线

• 批准号: 172540787
• 负责人: Professor Dr. Joost Wintterlin
• 金额: --
• 依托单位: Paul-Drude-Institut für Festkörperelektronik (PDI)
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2010
• 资助国家: 德国
• 起止时间: 2009-12-31 至 2016-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/172540787?language=en
• 关键词: metal; route; graphene; synthesis; electronic

The project aims at a metal-based synthesis of highly ordered graphene. The method uses CVD of ethylene on single-crystal metal films supported on yttria-stabilized zirconia (YSZ)-buffered Si(111) wafers. As analytical techniques we employ scanning tunneling microscopy (STM), Auger electron spectroscopy (AES), and low-energy electron diffraction (LEED). In addition, we will use the central facility for low energy electron microscopy (LEEM) and photoemission electron microscopy (PEEM) of the priority program. We have already shown that the extremely high crystallinity and cleanness of supported Ir(111) and Ru(0001) films can be utilized for growing ordered, single layer graphene sheets. In preliminary experiments it was found that Ni(111) films could be etched in a mild, gas-based process with CO, the so-called Mond process. In the second period of the project we will develop methods for improving the crystalline quality of the graphene sheets on Ni(111)/YSZ/Si(111) supports by utilizing Ostwald ripening processes discovered in LEEM experiments in the first period. We will furthermore improve the parameters for the Mond process, and we will perform the required measurements of the electronic properties of the graphene samples. The favorable properties of the Ni(111)/YSZ/Si(111) support will be then utilized for growing graphene nanoribbons on off-axis samples and on samples prestructured with 1D templates.

该项目旨在以金属为基础合成高度有序的石墨烯。该方法使用乙烯在支撑于氧化钇稳定的氧化锆（YSZ）缓冲的Si（111）晶片上的单晶金属膜上的CVD。作为分析技术，我们采用扫描隧道显微镜（STM），俄歇电子能谱（AES）和低能电子衍射（LEED）。此外，我们将使用优先计划的低能电子显微镜（LEEM）和光发射电子显微镜（PEEM）的中心设施。我们已经表明，支撑的Ir（111）和Ru（0001）膜的极高结晶度和清洁度可以用于生长有序的单层石墨烯片。在初步实验中发现，Ni（111）膜可以在温和的、基于气体的工艺中用CO蚀刻，即所谓的蒙德工艺。在该项目的第二阶段，我们将通过利用第一阶段LEEM实验中发现的Ostwald熟化过程来开发改善Ni（111）/YSZ/Si（111）载体上石墨烯片的结晶质量的方法。我们将进一步改进蒙德工艺的参数，并对石墨烯样品的电子特性进行所需的测量。Ni（111）/YSZ/Si（111）载体的有利性质将用于在离轴样品和用1D模板预结构化的样品上生长石墨烯纳米带。