A metal route to graphene synthesis for electronic devices

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The project aims at a metal-based synthesis of highly ordered graphene. The method uses CVD of ethylene on single-crystal metal films supported on yttria-stabilized zirconia (YSZ)-buffered Si(111) wafers. As analytical techniques we employ scanning tunneling microscopy (STM), Auger electron spectroscopy (AES), and low-energy electron diffraction (LEED). In addition, we will use the central facility for low energy electron microscopy (LEEM) and photoemission electron microscopy (PEEM) of the priority program. We have already shown that the extremely high crystallinity and cleanness of supported Ir(111) and Ru(0001) films can be utilized for growing ordered, single layer graphene sheets. In preliminary experiments it was found that Ni(111) films could be etched in a mild, gas-based process with CO, the so-called Mond process. In the second period of the project we will develop methods for improving the crystalline quality of the graphene sheets on Ni(111)/YSZ/Si(111) supports by utilizing Ostwald ripening processes discovered in LEEM experiments in the first period. We will furthermore improve the parameters for the Mond process, and we will perform the required measurements of the electronic properties of the graphene samples. The favorable properties of the Ni(111)/YSZ/Si(111) support will be then utilized for growing graphene nanoribbons on off-axis samples and on samples prestructured with 1D templates.