The Nearest Uniformity Producing Profile (NUPP): A Generalized Optimization Criterion for Thin-Film Processing Applications

摘要：Raymond A.Adomaitis和Gary W.Rubloff研究所：马里兰大学提议编号：0554045标题：最近的均匀产生轮廓(NUPP)：薄膜处理应用的通用优化标准计划开发一种新的薄膜沉积过程(例如，用于半导体制造的化学气相沉积)中的空间均匀控制标准，适用于所有旋转衬底以提高均匀性的沉积系统的任何薄膜质量(厚度、成分、微结构和电性能等)。该方法基于识别在旋转下产生均匀薄膜的静止衬底(例如，停滞晶片)上的所有沉积轮廓的子空间，然后将要控制的沉积轮廓投影到跨越该子空间的一系列均匀产生基函数上，以确定最近的均匀产生轮廓(NUPP)。这个数学标准只取决于沉积系统的几何特性，可以开发控制和优化方法来减少与NUPP的偏差，给出了一种普遍适用的薄膜控制方法。NUPP概念和基本理论的一个重要贡献是，后者揭示了均匀和非均匀产生子空间的新结构，提供了对薄膜工艺设计和控制原理的洞察，并有机会将这些原理统一到一系列反应堆设计中。智力价值本研究将开发一种全新的方法来控制薄膜加工，并在工业环境中展示其有效性。对这种新的分析和控制技术的开发的初步研究揭示了在框架的数学和计算方面的未解决的问题，并且PI与工业伙伴的长期关系为测试这种控制方法创造了理想的情况。均匀控制技术的独特方面是它基于最少的物理假设，导致一种技术可应用于广泛的薄膜处理控制、优化和设计应用中的任何均匀标准，包括所有CVD、蚀刻、PVD(物理气相沉积)、原子层沉积(ALD)和具有旋转衬底的任何其他薄膜工艺，给这项技术带来了非常广泛的工业影响。半导体、光电子、光学涂层等行业的薄膜加工将从这种方法中受益。大部分资金将专门用于在最先进的工业研究和生产设施中提供本科生和研究生的研究机会；将开发的计算工具将非常适合包装和以MatLab工具箱和相关的短期课程的形式广泛分发。

ABSTRACTPI: Raymond A. Adomaitis and Gary W. Rubloff Institution: University of MarylandProposal Number: 0554045Title: The Nearest Uniformity Producing Profile (NUPP): A Generalized OptimizationCriterion for Thin-Film Processing ApplicationsThe development of a new criterion for spatial uniformity control in thin film deposition processes (e.g., chemical vapor deposition for semiconductor manufacturing) is planned, applicable to any film quality (thickness, composition, microstructure, and electrical properties, among others) for all deposition systems where the substrate is rotated to improve uniformity. The approach is based on identifying the subspace of all deposition profiles on the stationary substrate (e.g., stalled wafer) that produce uniform films under rotation and then projecting a deposition profile to be controlled onto a sequence of uniformity-producing basis functions spanning that subspace to determine the Nearest Uniformity Producing Profile (NUPP). This mathematical criterion depends only on the geometrical characteristics of the deposition system, and control and optimization methods can be developed to reduce the deviation from the NUPP giving a universally applicable film control methodology. An important contribution of the NUPP concept and underlying theory is that the latter reveals new structure in the uniformity andnonuniformity producing subspaces, providing insight into thin-film process design and control principles and an opportunity to unify these principles across a range of reactor designs.Intellectual MeritThe research would develop a completely new approach to the control of thin film processing and demonstrate its effectiveness in an industrial setting. Preliminary research on the development of this new analysis and control technique has revealed open issues in terms of the mathematical and computational aspects of the framework, and the long standing relationship of the PI with the industrial partner creates an ideal situation for testing this control approach.Broader ImpactA unique aspect of the uniformity control technique is that it is based on a minimal number of physical assumptions, resulting in a technique applicable to any uniformity criterion in a wide range of thin film processing control, optimization, and design applications, including all CVD, etch, PVD (physical vapor deposition), atomic layer deposition (ALD), and any other thin film process with a rotating substrate, giving the technique very broad industrial impact. Thin film processing in semiconductor, optoelectronic, optical coatings, and other industries will benefit from this approach. The majority of funding will be dedicated to providing undergraduate and graduate research opportunities in a state-of-the-art industrial research and production facility; the computational tools to be developed will be ideally suited for packaging and broad distribution in the format of a MATLAB toolbox and an associated short course.