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Gas Phase NanoWire Integration Process

Gas Phase NanoWire Integration Process
气相纳米线集成工艺
批准号:
0556161
负责人:
Heiko Jacobs
金额:
$20.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2006
资助国家:
美国
项目状态:
已结题
起止时间:
2006-05-01 至 2010-04-30

项目摘要

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中文摘要
翻译
这项拨款为开发一种气相工艺,在表面上集成纳米线提供了资金。该方法是安装并表征一个双反应器系统,用于在受控条件下原位形成种子颗粒(反应器1)和纳米线生长(反应器2)。反应器将与气相处理系统连接,以运输和沉积种子颗粒到目标晶圆上。金属丝将在高温下生长,其形态、成分和取向将与基于溶液的生长方法进行比较。该提案的智力价值在于展示并推进了新的原位气相集成工艺的知识,该工艺旨在将纳米线集成在表面的可寻址区域。所提出的集成系统将提供关于纳米线直径的最终限制的答案,这些纳米线可以用大小分类的种子颗粒形成。目前达到这一效果的方法很少,而且都有各自的问题。因此,这项工作的每一个要素都可能产生巨大的影响。种子颗粒可以在气相中产生,在那里它们可以使用成熟的方法进行处理。将任意材料的纳米线定位在任意基板上的能力,可以使基于其他不相容材料的技术合并。在单一基板上集成不同纳米材料器件的能力将减少互连的长度,反过来,器件和系统的性能将得到改善,并且实现所需的系统所需的加工步骤更少。因此,在这项建议下发展的方法和过程可能会对纳米技术的整体进展产生重大影响。
英文摘要
This grant provides funding to develop a gas phase process to integrate nanowires on surfaces. The approach is to install and characterize a dual reactor system for the insitu formation of seed particles (reactor 1) and nanowire growths (reactor 2) under controlled conditions. The reactors will be connected with a gas phase handling system to transport and deposit seed particles onto the target wafer. The wires will be grown at elevated temperatures and the morphology, composition, and orientation will be compared with solution based growth methods. The intellectual merit of this proposal is to demonstrate and advance knowledge of novel insitu gas phase integration processes that aim at integrating nanowires at addressable regions on a surface. The proposed integration system will provide answers on the ultimate limit in the diameters of the nanowires that can be formed using size classified seed particles. Few methods to this effect currently exist and are all afflicted with their problems. Hence, each element of this work could have tremendous impact. Seed particles could be created in the vapor phase, where they could be processed using well established methods. The ability to localize nanowires of arbitrary materials on arbitrary substrates could allow the merging of technologies based on otherwise incompatible materials. The ability to integrate different nanomaterial based devices on a single substrate will reduce the lengths of interconnects, in turn, devices and systems performance would improve and less processing steps should be required to realize a desired system. The methods and processes developed under this proposal may thus have a significant impact on the progress of nanotechnology in general.
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Universal Chip Assembly and Interconnection Process - Development and Applications
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  • 财政年份:
    2011
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