Gas Phase NanoWire Integration Process
Gas Phase NanoWire Integration Process
批准号:
0556161
负责人:
Heiko Jacobs
金额:
$20.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2006
资助国家:
美国
项目状态:
已结题
起止时间:
2006-05-01 至 2010-04-30
中文摘要
该赠款提供资金,以开发一种气相工艺,将纳米线整合到表面上。该方法是安装和表征双反应器系统,用于在受控条件下原位形成种子颗粒(反应器1)和纳米线生长(反应器2)。反应器将与气相处理系统连接,以将种子颗粒输送和存款到目标晶片上。线将在升高的温度下生长,并且将形态、组成和取向与基于溶液的生长方法进行比较。该建议的智力价值是展示和推进新的原位气相集成过程的知识,其目的是在表面上的可寻址区域集成纳米线。所提出的集成系统将提供答案的纳米线,可以形成使用大小分类种子颗粒的直径的最终限制。目前几乎没有这种效果的方法存在,并且都受到其问题的困扰。因此,这项工作的每一个要素都可能产生巨大的影响。种子颗粒可以在气相中产生,其中它们可以使用成熟的方法进行处理。将任意材料的纳米线定位在任意衬底上的能力可以允许基于其他不兼容材料的技术的合并。将不同的基于纳米材料的器件集成在单个衬底上的能力将减少互连的长度,反过来,器件和系统性能将得到改善,并且实现期望的系统需要更少的处理步骤。因此,根据这一建议开发的方法和工艺可能对纳米技术的总体进展产生重大影响。
英文摘要
This grant provides funding to develop a gas phase process to integrate nanowires on surfaces. The approach is to install and characterize a dual reactor system for the insitu formation of seed particles (reactor 1) and nanowire growths (reactor 2) under controlled conditions. The reactors will be connected with a gas phase handling system to transport and deposit seed particles onto the target wafer. The wires will be grown at elevated temperatures and the morphology, composition, and orientation will be compared with solution based growth methods. The intellectual merit of this proposal is to demonstrate and advance knowledge of novel insitu gas phase integration processes that aim at integrating nanowires at addressable regions on a surface. The proposed integration system will provide answers on the ultimate limit in the diameters of the nanowires that can be formed using size classified seed particles. Few methods to this effect currently exist and are all afflicted with their problems. Hence, each element of this work could have tremendous impact. Seed particles could be created in the vapor phase, where they could be processed using well established methods. The ability to localize nanowires of arbitrary materials on arbitrary substrates could allow the merging of technologies based on otherwise incompatible materials. The ability to integrate different nanomaterial based devices on a single substrate will reduce the lengths of interconnects, in turn, devices and systems performance would improve and less processing steps should be required to realize a desired system. The methods and processes developed under this proposal may thus have a significant impact on the progress of nanotechnology in general.
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Universal Chip Assembly and Interconnection Process - Development and Applications
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批准号:1068013
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项目类别:Standard Grant
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资助金额:$36.0万
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财政年份:2011
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负责人:Heiko Jacobs
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依托单位:
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财政年份:2008
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负责人:Heiko Jacobs
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依托单位:
Gas Phase Nanoxerographic Nanomaterial Integration
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批准号:0755995
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项目类别:Standard Grant
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资助金额:$40.0万
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财政年份:2008
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负责人:Heiko Jacobs
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依托单位:
Directed Assembly: Integration of Heterogeneous Systems Across Length Scales and Material Boundaries
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批准号:0601454
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项目类别:Standard Grant
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资助金额:$27.0万
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财政年份:2006
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负责人:Heiko Jacobs
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依托单位:
GOALI: Nanowire Integration Process to Gain Control over Location, Dimension, and Orientation
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批准号:0621137
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项目类别:Continuing Grant
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资助金额:$42.0万
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财政年份:2006
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负责人:Heiko Jacobs
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依托单位:
SRC/SGER: Parallel Assembly of Nanoparticles and Nanowires on Silicon Substrates
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批准号:0407613
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项目类别:Standard Grant
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资助金额:$6.0万
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财政年份:2004
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负责人:Heiko Jacobs
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依托单位:
Chip-Level Self-Assembly: Tools and components that self-assemble and self-package to form desired microsystems
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批准号:0300263
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2003
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负责人:Heiko Jacobs
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依托单位:
CAREER: Directed Assembly of Nanoparticles; A Tool to Enable the Fabrication of Nanoparticle Based Devices
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批准号:0229087
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2003
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负责人:Heiko Jacobs
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依托单位:
NanoXerography: The Use of Electrostatic Forces to Pattern Nanoparticles
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批准号:0217538
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项目类别:Standard Grant
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资助金额:$40.0万
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财政年份:2002
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负责人:Heiko Jacobs
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依托单位:
国内基金
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