SBIR Phase I: Magnetoresistive Device for THz-uW Computing (EOHW7)

SBIR 第一阶段：用于 THz-uW 计算的磁阻器件 (EOHW7)

• 批准号: 0637998
• 负责人: James Lai
• 金额: $ 9.97万
• 依托单位: Northern Lights Semiconductor Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-01-01 至 2007-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0637998&HistoricalAwards=false
• 关键词: SBIR; Phase; Magnetoresistive; Device; THz

This Small Business Innovation Research (SBIR) Phase I project focuses on further development of magneticmetal transistor that will lead to THz-uW processors and nonvolatile universal memories within 12 month. This transistor, called MDEV (Magnetoresistive Device), was invented at the company working on this award. The transistor employs magnetic spin to determine transistor characteristics. Because atoms and power density do not scale, CMOS scaling is leading to unsustainable thermal levels, performance limits, and escalating cost. Materials innovation such as strained Si, high-K, double gate, FinFET, CNT (Carbon Nano-Tube), and spin-electronics are either still confined to laboratories or too expensive to be widely available. Because MDEV can be built using only standard CMOS metallization equipment on blank silicon wafers, it can be commercialized quickly and cheaply. The first MDEV-based product is a universal memory named M3 (Metal Magnetic Memory). M3 is expected to be Nonvolatile, faster than SRAM, and comes in high density. Because it has unlimited write endurance, M3 is suitable for code and data applications. The research objective of this project is to: i) Optimize and characterize MDEV structures. ii) Create MDEV based memory (M3) prototypes. iii) Evaluate these chips in memory performance (e.g. write/read time, write/read power), environmental endurance (e.g. elevated temperature operations) and process yields. The current wave of semiconductor growth is driven by mass-market electronics in consumer and wireless applications. If successful MDEV based memories and processors will allow designers to improve performance (THz) and reduce power consumption (uW) without cost increases. MDEV memory (M3) is expected to be price competitive with SRAM, NOR and EEPROM today, and is targeted initially as direct replacement for SRAM, EEPROM and NOR Flash, a combined market size of $12B. The long term goal of this effort is to enable designers to simplify their designs in reducing multiple memory technologies (e.g. SRAM and NOR Flash for data and code applications respectively) to one universal memory (M3). MDEV will also be used to build very high performance adaptive processors that combine FGPA's flexibility and low NRE with ASIC's high performance, low power and low unit cost.

该小型企业创新研究(SBIR)第一阶段项目专注于磁性金属晶体管的进一步开发，该晶体管将在12个月内推出THz-UW处理器和非易失性通用存储器。这种晶体管被称为MDEV(磁阻器件)，是在该奖项的工作公司发明的。晶体管使用磁自旋来确定晶体管特性。由于原子和功率密度不能进行扩展，所以CMOS扩展导致不可持续的热级别、性能限制和不断攀升的成本。应变硅、高K、双栅、FinFET、碳纳米管(CNT)和自旋电子学等材料创新要么仍局限于实验室，要么过于昂贵而无法广泛应用。由于MDEV只需在空白硅片上使用标准的cmos金属化设备即可制造，因此可以快速且廉价地实现商业化。第一个基于MDEV的产品是名为M3(金属磁存储器)的通用存储器。M3预计是非易失性的，比SRAM更快，而且密度很高。由于M3具有无限的写入耐用性，因此适用于代码和数据应用程序。本项目的研究目标是：i)优化和表征MDEV结构。Ii)创建基于MDEV的存储器(M3)原型。Iii)评估这些芯片的存储性能(例如，读/写时间、读/写功率)、环境耐久性(例如，高温操作)和工艺良率。当前的半导体增长浪潮是由消费和无线应用中的大众市场电子产品推动的。如果成功，基于MDEV的存储器和处理器将允许设计者在不增加成本的情况下提高性能(THz)和降低功耗(UW)。目前，MDEV Memory(M3)预计将与SRAM、NOR和EEPROM具有价格竞争力，最初的目标是直接取代SRAM、EEPROM和NOR闪存，市场总规模为120亿美元。这项工作的长期目标是使设计者能够简化他们的设计，将多种存储器技术(例如，分别用于数据和代码应用的SRAM和NOR闪存)减少到一个通用存储器(M3)。MDEV还将被用于构建非常高性能的自适应处理器，将FGPA的灵活性和低NRE与ASIC的高性能、低功耗和低单位成本结合在一起。