GOALI: New Design, Fabricaiton and Investigation of Novel Spin Torque Transfer Devices

GOALI：新型旋转扭矩传递装置的新设计、制造和研究

• 批准号: 0702264
• 负责人: Jian-Ping Wang
• 金额: $ 25.88万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-05-01 至 2011-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0702264&HistoricalAwards=false
• 关键词: GOALI; New; Design; Fabricaiton; Investigation

The objective of this research is to realize thermally-stable spin torque transfer structures with ultra low switching current density. This approach is based on a novel magnetic-tunnel-junction-based (MTJ) spin torque transfer structure with perpendicular magnetocrystalline anisotropy and a composite free layer, which will likely support the areal density of magnetic random access memory (MRAM) up to 50 Gbit/in2. . Intellectual Merit:The intellectual merit is in the new spin switching configuration and the design and fabrication of a thermally-stable sub-50-nm MTJ-based spin transfer structure with low switching current density, which will address the scaling problem for the MRAM. The proposed research addresses the issues by a combination of growth of chemically-ordered perpendicular FePt films and composite free layers, their integration with MTJ structure, nano patterning and thermally-activated magnetization switching study by fast magnetization switching test.Broader Impacts:The broad impact of this research involves: the integration of education and research through outreach to K-12 students, undergraduate education and graduate research and research fellow study. Undergraduates and high school teachers/students will participate in Research Experience for Undergraduates programs. Graduate students will benefit from interdisciplinary centers and extensive contact with industry. Education on thin film growth, magnetic materials, fast magnetization switching test and nanoscale spintronic devices patterning will be emphasized through core courses, magnetic seminars and new lectures. Finally, although this proposal is worded towards the needs of MRAM, other applications such as magnetic logic devices and spintronic probe arrays could also benefit from this novel spin transfer device proposed in this research.

本研究的目的是实现具有超低开关电流密度的热稳定自旋力矩转移结构。 这种方法是基于一种新的基于磁性隧道结（MTJ）的自旋扭矩转移结构与垂直磁晶各向异性和复合自由层，这将可能支持磁随机存取存储器（MRAM）的面密度高达50 Gbit/in 2。. 智力优势：智力优势在于新的自旋切换配置以及具有低切换电流密度的热稳定亚50纳米MTJ基自旋转移结构的设计和制造，这将解决MRAM的缩放问题。拟议的研究通过化学有序垂直FePt薄膜和复合自由层的生长、它们与MTJ结构的集成、纳米图案化和通过快速磁化切换测试进行的热激活磁化切换研究的组合来解决这些问题。更广泛的影响：这项研究的广泛影响涉及：通过对K-12学生、本科生教育和研究生研究以及研究员学习的推广，实现教育和研究的一体化。本科生和高中教师/学生将参加本科生项目的研究经验。研究生将受益于跨学科中心和与行业的广泛接触。透过核心课程、磁性研讨会及新讲座，加强薄膜成长、磁性材料、快速磁化转换测试及奈米自旋电子元件图案化等教育。最后，虽然这项建议是措辞对MRAM的需要，其他应用，如磁逻辑器件和自旋电子探针阵列也可以受益于这种新的自旋转移器件在这项研究中提出。