GOALI: New Design, Fabricaiton and Investigation of Novel Spin Torque Transfer Devices

本研究的目标是实现具有超低开关电流密度的热稳定自旋转矩传递结构。该方法基于一种新型的基于磁隧道结（MTJ）的自旋转矩传递结构，具有垂直磁晶各向异性和复合自由层，可能支持高达50 Gbit/in2的磁随机存取存储器（MRAM）的面密度。知识优势：知识优势在于新的自旋开关配置，以及设计和制造了一种低开关电流密度、热稳定的亚50纳米mtj自旋转移结构，这将解决MRAM的缩放问题。本研究将结合化学有序垂直FePt薄膜和复合自由层的生长、与MTJ结构的集成、纳米图像化和快速磁化开关测试的热激活磁化开关研究来解决这一问题。更广泛的影响：本研究的广泛影响包括：通过扩展到K-12学生，本科教育和研究生研究以及研究员研究的教育和研究的整合。本科生和高中教师/学生将参加本科生研究体验项目。研究生将受益于跨学科中心和广泛的行业接触。通过核心课程、磁性研讨会和新讲座，重点介绍薄膜生长、磁性材料、快速磁化开关测试和纳米级自旋电子器件图像化。最后，虽然本提案是针对MRAM的需求，但其他应用，如磁逻辑器件和自旋电子探针阵列也可以从本研究中提出的这种新型自旋转移器件中受益。

The objective of this research is to realize thermally-stable spin torque transfer structures with ultra low switching current density. This approach is based on a novel magnetic-tunnel-junction-based (MTJ) spin torque transfer structure with perpendicular magnetocrystalline anisotropy and a composite free layer, which will likely support the areal density of magnetic random access memory (MRAM) up to 50 Gbit/in2. . Intellectual Merit:The intellectual merit is in the new spin switching configuration and the design and fabrication of a thermally-stable sub-50-nm MTJ-based spin transfer structure with low switching current density, which will address the scaling problem for the MRAM. The proposed research addresses the issues by a combination of growth of chemically-ordered perpendicular FePt films and composite free layers, their integration with MTJ structure, nano patterning and thermally-activated magnetization switching study by fast magnetization switching test.Broader Impacts:The broad impact of this research involves: the integration of education and research through outreach to K-12 students, undergraduate education and graduate research and research fellow study. Undergraduates and high school teachers/students will participate in Research Experience for Undergraduates programs. Graduate students will benefit from interdisciplinary centers and extensive contact with industry. Education on thin film growth, magnetic materials, fast magnetization switching test and nanoscale spintronic devices patterning will be emphasized through core courses, magnetic seminars and new lectures. Finally, although this proposal is worded towards the needs of MRAM, other applications such as magnetic logic devices and spintronic probe arrays could also benefit from this novel spin transfer device proposed in this research.