Optically decoupled dual-cavity VCSEL-modulator high-speed light source

光解耦双腔 VCSEL 调制器高速光源

• 批准号: 0725523
• 负责人: Serge Oktyabrsky
• 金额: $ 33.02万
• 依托单位: SUNY at Albany
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-11-01 至 2010-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0725523&HistoricalAwards=false
• 关键词: Optically; decoupled; dual; cavity; VCSEL

Intellectual MeritsHigh modulation frequency vertical cavity surface-emitting lasers (VCSELs) and dense VCSEL arrays are expected to change the whole paradigm of short-range interconnections ranging from silicon IC I/O's (and perhaps long intra-chip) to module- and board-level. The bandwidth of current-modulated laser diodes is limited to about 20 GHz by intrinsic dynamic processes but can be significantly increased by external modulation. In this case, optical feedback from the modulator to laser should be suppressed, for example, using optical isolator as in telecom applications. In this project, a novel method of optical decoupling of gain and absorber sections of a monolithic VCSEL-modulator emitter will be studied. The essence of the approach is in the suppression of the AC part of the optical wave reflected from the modulator section using a detuned Fabri-Perot cavity with quantum-confined Stark effect absorber. The work plan contains studies of the physics of the processes in the "decoupled" dual-cavity device, development of numerical models to assess relationships between the device parameters, such as resonance detuning accuracy, modulation depth and applied voltage swing; detuning, modulation bandwidth and frequency chirp, and optimization and demonstration of superior device characteristics. It is expected that the proposed VCSEL-Modulator emitter will demonstrate bandwidth of 40-100 GHz limited by parasitics of a low-power reverse-biased modulator p-i-n diode, and reduced frequency chirping which can be controlled from negative to positive. Broader Impacts:Broader impact of the proposed research is expected in education program that will benefit from the studies on physics of microcavities, VCSELs and modulators and the developed tools and technologies included into two PI's graduate level courses, direct participation in this research of graduate, undergraduate and historically under-represented in graduate education students and further development of interactive "Web-Tools" (http://www.albany.edu/~soktyabr/webtools) for design and virtual fabrication of optoelectronic devices.

高调制频率垂直腔面发射激光器（VCSEL）和密集VCSEL阵列有望改变从硅IC I/O（可能还有长芯片内）到模块级和板级的短程互连的整个范式。电流调制的激光二极管的带宽被限制在约20 GHz的固有动态过程，但可以显着增加外部调制。在这种情况下，从调制器到激光器的光反馈应该被抑制，例如，在电信应用中使用光隔离器。在本计画中，我们将研究一种新颖的方法，可将单块VCSEL调变器的增益与吸收体部分进行光学解耦。该方法的实质是在使用具有量子限制斯塔克效应吸收体的失谐法布里-珀罗腔来抑制从调制器部分反射的光波的AC部分。该工作计划包括研究“去耦”双腔器件中过程的物理学，开发数值模型来评估器件参数之间的关系，例如谐振失调精度、调制深度和施加电压摆幅;失调、调制带宽和频率啁啾，以及优化和演示上级器件特性。 预期所提出的VCSEL调制器发射器将展示受低功率反向偏置调制器p-i-n二极管的寄生效应限制的40-100 GHz的带宽，以及可以从负到正控制的降低的频率啁啾。 更广泛的影响：拟议的研究将产生更广泛的影响，预计在教育计划，将受益于微腔，VCSEL和调制器的物理学研究，以及纳入两个PI的研究生课程的开发工具和技术，直接参与研究生，本科生和历史上研究生教育学生的研究，并进一步开发交互式“网络工具”（http：//www.albany.edu/websoktyabr/webtools）用于设计和光电器件的虚拟制造。