Optically decoupled dual-cavity VCSEL-modulator high-speed light source

高调制频率垂直腔面发射激光器（VCSEL）和密集的VCSEL阵列有望改变从硅IC I/O（可能还有长芯片内）到模块和板级的整个短距离互连范式。电流调制激光二极管的带宽受内在动态过程限制在20 GHz左右，但通过外部调制可以显著提高带宽。在这种情况下，从调制器到激光器的光反馈应该被抑制，例如，在电信应用中使用光隔离器。本计画将研究单片vcsel调制器发射极增益与吸收部分的光学解耦方法。该方法的实质是利用带量子限制Stark效应吸收器的失谐Fabri-Perot腔抑制从调制器部分反射的光波的交流部分。该工作计划包括对“解耦”双腔器件过程的物理研究，开发数值模型以评估器件参数之间的关系，如谐振失谐精度、调制深度和施加电压摆幅；失谐，调制带宽和频率啁啾，以及优化和演示优越的设备特性。预计该vcsel调制器发射极的带宽为40-100 GHz，受低功率反向偏置调制器p-i-n二极管的寄生限制，并且可以从负向正控制频率啁啾。更广泛的影响：拟议的研究将对教育计划产生更广泛的影响，这将受益于微腔，VCSELs和调制器的物理研究以及包括在两个PI研究生水平课程中的开发工具和技术，研究生直接参与这项研究。本科生和历史上在研究生教育中代表性不足的学生，以及用于设计和虚拟制造光电器件的交互式“网络工具”（http://www.albany.edu/~soktyabr/webtools）的进一步发展。

Intellectual MeritsHigh modulation frequency vertical cavity surface-emitting lasers (VCSELs) and dense VCSEL arrays are expected to change the whole paradigm of short-range interconnections ranging from silicon IC I/O's (and perhaps long intra-chip) to module- and board-level. The bandwidth of current-modulated laser diodes is limited to about 20 GHz by intrinsic dynamic processes but can be significantly increased by external modulation. In this case, optical feedback from the modulator to laser should be suppressed, for example, using optical isolator as in telecom applications. In this project, a novel method of optical decoupling of gain and absorber sections of a monolithic VCSEL-modulator emitter will be studied. The essence of the approach is in the suppression of the AC part of the optical wave reflected from the modulator section using a detuned Fabri-Perot cavity with quantum-confined Stark effect absorber. The work plan contains studies of the physics of the processes in the "decoupled" dual-cavity device, development of numerical models to assess relationships between the device parameters, such as resonance detuning accuracy, modulation depth and applied voltage swing; detuning, modulation bandwidth and frequency chirp, and optimization and demonstration of superior device characteristics. It is expected that the proposed VCSEL-Modulator emitter will demonstrate bandwidth of 40-100 GHz limited by parasitics of a low-power reverse-biased modulator p-i-n diode, and reduced frequency chirping which can be controlled from negative to positive. Broader Impacts:Broader impact of the proposed research is expected in education program that will benefit from the studies on physics of microcavities, VCSELs and modulators and the developed tools and technologies included into two PI's graduate level courses, direct participation in this research of graduate, undergraduate and historically under-represented in graduate education students and further development of interactive "Web-Tools" (http://www.albany.edu/~soktyabr/webtools) for design and virtual fabrication of optoelectronic devices.