III-Sb Interfaces with High-k Oxides: Science and Technology of Novel MOSFET Gate Stack

III-Sb 与高 k 氧化物的界面：新型 MOSFET 栅极堆栈的科学与技术

• 批准号: 1006253
• 负责人: Serge Oktyabrsky
• 金额: $ 29.92万
• 依托单位: SUNY at Albany
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-09-15 至 2013-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1006253&HistoricalAwards=false
• 关键词: III; Sb; Interfaces; Oxides; Science

Technical: Metal-oxide-semiconductor field-effect transistors (MOSFETs) based on group III-V semiconductors have significant potential advantages over silicon-based devices for high-speed, low-power digital integrated circuits. MOSFETs with group III-Sb channels could reduce the switching energy-delay product by an order of magnitude. This project studies gate stacks for scalable n- and p-type MOSFETs with low interface state density and superior channel transport using a novel material system: high dielectric constant (k) oxide on In(Ga)Sb quantum-well channel. The research involves in-situ passivation of III-V channels grown using molecular beam epitaxy in an ultrahigh vacuum environment followed by an in-situ deposition of high-k oxide. A few-monolayer-thick amorphous Si or Al serves as the interface passivation layer and is incorporated into the high-k stack based on HfO2 or other high-k oxides. This approach is expected to reduce interface state density, improve thermal stability, and reduce carrier scattering.Non-technical: The project addresses basic research issues in a topical area of materials science with high technological relevance. Significant impacts are expected on the microelectronic industry through technology development, commercialization, and the facilitation of further scaling of digital circuits thus providing better, higher quality and less expensive electronics. The project also contributes to education activities through graduate student training, undergraduate minority student participation of research, and promotion of science and technology to the general public.

技术：基于III-V族半导体的金属氧化物半导体场效应晶体管（mosfet）与基于硅的器件相比，在高速、低功耗数字集成电路中具有显著的潜在优势。具有III-Sb组通道的mosfet可以将开关能量延迟积降低一个数量级。本项目使用一种新型材料系统：In(Ga)Sb量子阱通道上的高介电常数(k)氧化物，研究具有低界面态密度和优越通道输运的可扩展n型和p型mosfet的栅极堆叠。该研究涉及在超高真空环境下使用分子束外延生长的III-V通道的原位钝化，然后原位沉积高k氧化物。少量单层厚度的非晶态Si或Al作为界面钝化层，并结合到基于HfO2或其他高k氧化物的高k堆栈中。这种方法有望降低界面态密度，提高热稳定性，减少载流子散射。非技术：该项目涉及材料科学主题领域的基础研究问题，具有高技术相关性。通过技术发展、商业化和促进数字电路的进一步扩展，从而提供更好、更高质量和更便宜的电子产品，预计将对微电子工业产生重大影响。该项目还通过研究生培训、少数民族本科生参与研究以及向公众推广科学技术，为教育活动作出贡献。