EMT/NANO: Single Atom Wide Wires with Insulation: New Paradigm for Ballistic Transport

创造新的化合物和材料，促进有效的电子传导是一个重要的和持续的挑战，为发展纳米技术。 我们研究了一个新的一维材料家族的发展，其核心由一个单原子宽的导线组成，该导线被绝缘保护基团包围。这些电线与其绝缘涂层同时设计，使得电线可以以最大密度包装。 绝缘基团用于隔离每根导线以便于合成，促进高度一维结构，并促进沿沿着而不是在导线之间的有效传导。所提出的材料建立在我们小组确定的化合物基础上，经过验证的方法学，并通过新的配体和氧化还原反应扩展以实现所需的电子结构。 将制备盐，其中每个阳离子和阴离子含有金属原子M，被基于L和X基团的配体包围。 先前的工作建立了使用复分解反应来合成具有含d8和d10金属的阳离子和阴离子的形式为[ML 3X][MX 2]和[ML 2X 2][MX 2]的复盐，其中L是中性刘易斯碱供体，X是阴离子基团。 阳离子和阴离子以无限阵列堆叠，形成金属原子链，沿着链的长度沿着具有无限金属-金属接触。 到目前为止，Au和Pt结构已被广泛使用，将用Co、Ni、Cu、Rh、Ir、Pr和Ag对其进行详细说明。 还将开发其他离子基序，包括[MX4]-和[MLX 3]-，这种合成方案非常灵活，因此将允许制备基本上无限阵列的不同电子职业。

The creation of new compounds and materials that facilitate efficient electronic conduction is an important and on-going challenge for the development of nanoscale technologies. We study the development of a new family of one-dimensional materials whose core consists of a one-atom wide conducting wire that is surrounding by insulating protecting groups. These wires are designed simultaneously with their insulating coating such that the wires can be packed with maximum density. The insulating groups serve to isolate each wire for ease of synthesis, promote highly one-dimensional structures, and facilitate efficient conduction along but not between the wires.The proposed materials build on established compounds from our group, proven methodologies, and are expanded with new ligands and redox reactions to achieve the desired electronic structures. Salts will be prepared in which each cation and anion contain a metal atom, M, surrounded by ligands based on L and X groups. Previous work established the use of metathesis reactions to synthesize double salts with d8 and d10 metal-containing cations and anions of the form [ML3X][MX2] and [ML2X2][MX2], where L is a neutral Lewis base donor and X is anionic group. The cations and anions stack in an infinite array forming a chain of metal atoms with infinite metal-metal contacts along the length of the chain. Extensive use has been made of Au and Pt structures to date which will be elaborated upon with Co, Ni, Cu, Rh, Ir, Pr, and Ag. Other ion motifs will be developed as well including [MX4]-and [MLX3]-, This synthetic scheme is extremely flexible and will therefore allow an essentially infinite array of different electronic occupations to be prepared.