EMT/NANO: Single Atom Wide Wires with Insulation: New Paradigm for Ballistic Transport

创造促进有效电子传导的新化合物和材料是纳米技术发展的一个重要和持续的挑战。我们研究了一种新的一维材料家族的发展，其核心是一根单原子宽的导线，周围环绕着绝缘保护基团。这些线材与其绝缘涂层同时设计，使线材能够以最大密度进行包装。绝缘基用于隔离每根导线以便于合成，促进高度一维的结构，并促进沿导线但不是导线之间的有效传导。建议的材料建立在我们小组已建立的化合物基础上，经过验证的方法，并通过新的配体和氧化还原反应扩展，以获得所需的电子结构。将制备盐，其中每个阳离子和阴离子包含一个金属原子M，周围有基于L和X基团的配体。以前的工作建立了利用歧化反应与d8和d10金属阳离子和[ML3X][MX2]和[ML2X2][MX2]形式的阴离子合成复盐，其中L是中性路易斯碱给电子体，X是阴离子基团。阳离子和阴离子堆积成无限大的阵列，形成金属原子链，沿着链的长度具有无限的金属-金属接触。到目前为止，金和铂结构已经得到了广泛的使用，将与Co、Ni、Cu、Rh、Ir、Pr和Ag一起详细阐述这些结构。其他离子基序也将被开发，包括[MX4]-和[MLX3]-，这种合成方案非常灵活，因此将允许制备基本上无限的不同电子职业的阵列。

The creation of new compounds and materials that facilitate efficient electronic conduction is an important and on-going challenge for the development of nanoscale technologies. We study the development of a new family of one-dimensional materials whose core consists of a one-atom wide conducting wire that is surrounding by insulating protecting groups. These wires are designed simultaneously with their insulating coating such that the wires can be packed with maximum density. The insulating groups serve to isolate each wire for ease of synthesis, promote highly one-dimensional structures, and facilitate efficient conduction along but not between the wires.The proposed materials build on established compounds from our group, proven methodologies, and are expanded with new ligands and redox reactions to achieve the desired electronic structures. Salts will be prepared in which each cation and anion contain a metal atom, M, surrounded by ligands based on L and X groups. Previous work established the use of metathesis reactions to synthesize double salts with d8 and d10 metal-containing cations and anions of the form [ML3X][MX2] and [ML2X2][MX2], where L is a neutral Lewis base donor and X is anionic group. The cations and anions stack in an infinite array forming a chain of metal atoms with infinite metal-metal contacts along the length of the chain. Extensive use has been made of Au and Pt structures to date which will be elaborated upon with Co, Ni, Cu, Rh, Ir, Pr, and Ag. Other ion motifs will be developed as well including [MX4]-and [MLX3]-, This synthetic scheme is extremely flexible and will therefore allow an essentially infinite array of different electronic occupations to be prepared.