High Temperature Electronic Devices Based on Wide Bandgap Thin Films

基于宽带隙薄膜的高温电子器件

• 批准号: 0853789
• 负责人: Raj Singh
• 金额: $ 35万
• 依托单位: University of Cincinnati Main Campus
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-08-01 至 2012-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0853789&HistoricalAwards=false
• 关键词: Temperature; Electronic; Devices; Based; Wide

The objectives of this research are to synthesize and characterize thin films of high resistivity undoped, and semi-conducting p- and n-doped polycrystalline diamond and AlN thin films suitable for the fabrication of high temperature electronic devices, and to investigate the fabrication of high temperature microelectronic devices where silicon devices are not useful. The approach consists of synthesis of diamond films by microwave plasma enhanced chemical vapor deposition and measurement of their electrical and mechanical properties. The influence of process parameters on the composition, crystal quality, mechanical strength, and the electrical properties of the films will be studied. Advanced materials characterization techniques will be used to characterize nanoscale microstructure, which will be related to the properties of the films. Electrical properties such as I-V and C-V behaviors and carrier concentration will be measured over a range of temperatures. Young?s moduli will be measured on existing Michelson interferometer system. Fabrication of devices such as Schottky diodes, pressure sensor, and a voltage multiplier stack will be investigated. On a broader scale, the proposed research has potentials for enormous payoffs by developing electronics for operation above 500oC for aircraft, spacecraft, automobiles and nuclear reactors thereby reducing engine maintenance costs, and improving reliability and performance efficiencies. An essential and important component of this research will be to provide education and training of graduate students, post-docs, and undergraduate seniors. In addition, minority/women and high school students will be mentored and exposed to this research through programs at our university. A significant outreach to high schools is proposed.

本研究的目的是合成和表征薄膜的高电阻率未掺杂，半导体p-和n-掺杂的多晶金刚石和AlN薄膜适合于制造的高温电子器件，并调查高温微电子器件的制造硅器件是没有用的。该方法包括微波等离子体增强化学气相沉积金刚石薄膜的合成和测量其电气和机械性能。将研究工艺参数对薄膜的组成、晶体质量、机械强度和电学性能的影响。先进的材料表征技术将用于表征纳米级微结构，这将与薄膜的性能相关。将在一定温度范围内测量I-V和C-V行为以及载流子浓度等电学特性。年轻？s模量将在现有的迈克尔逊干涉仪系统上测量。肖特基二极管，压力传感器和电压倍增器堆栈等设备的制造将进行研究。在更广泛的范围内，拟议的研究有可能通过开发用于飞机、航天器、汽车和核反应堆的500 ℃以上运行的电子设备，从而降低发动机维护成本，提高可靠性和性能效率，获得巨大的回报。这项研究的一个重要组成部分是为研究生、博士后和本科高年级学生提供教育和培训。此外，少数民族/妇女和高中学生将通过我们大学的项目接受指导和接触这项研究。建议对高中进行重大宣传。