PFI-TT: Thermal Management of Power Semiconductor Electronics

PFI-TT：功率半导体电子器件的热管理

• 批准号: 2122495
• 负责人: Raj Singh
• 金额: $ 25万
• 依托单位: Oklahoma State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-08-01 至 2024-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2122495&HistoricalAwards=false
• 关键词: PFI; TT; Thermal; Management; Power

The broader impact/commercial potential of this Partnerships for Innovation - Technology Translation (PFI-TT) project is to pursue research and development that focuses on the more efficient removal of generated heat from electronic devices leading to commercialization of a new thermal management technology for power semiconductor electronics. Demand for power electronics is expected to be high and continues to grow especially in the defense, transportation, and alternative energy sectors, as well as the energy generation and distribution, hybrid/electric vehicles, and ultra-high efficiency lighting systems. There will be direct benefits of the project towards the development of new compact, lightweight, and higher reliability power electronic devices. In addition, successful completion of this project may result in an associated reduction in cost of operation, lower energy consumption, increased efficiency, and a lower carbon footprint. Finally, successful commercialization of the technology through the establishment of a start-up company or tech-transfer agreement and the training of students and a postdoctoral fellow in innovation and entrepreneurship will contribute to global leadership in power electronics for high-technology products.The current approach to thermal management for power electronics is limited due to heat extraction from the back or substrate side of the device using heat spreader/interface materials of poor thermal conductivity. This project addresses this technological problem by commercializing a novel diamond material-based technology to extract heat directly from the top of the power electronics where heat is generated. The approach is based on using a diamond film because it is well-suited for thermal management because of its high thermal conductivity and electrical resistivity. The extraction of heat directly from the top of a device can enhance efficiency by 40% and reduce package size and weight. The extraction of heat from the top also offers higher efficiency and reduced operating costs, while increasing device lifetimes and density. Another objective of the project is to train the work force in technology commercialization and entrepreneurship through NSF’s I-Corps Team Training in which the faculty (technical lead), a mentor and an entrepreneur lead (post doc and/or student) working on the project are taken through intensive training on how to successfully commercialize this promising technology. The new technology may lead to more efficient power electronics, lower operating costs, enhanced device lifetimes and density, and successful technology commercialization and entrepreneurship.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

该创新-技术转化合作伙伴关系（PFI-TT）项目的更广泛影响/商业潜力是致力于研究和开发，重点是更有效地去除电子设备产生的热量，从而使功率半导体电子设备的新热管理技术商业化。电力电子产品的需求预计将很高，并将继续增长，特别是在国防，运输和替代能源领域，以及能源生产和分配，混合动力/电动汽车和超高效率照明系统。该项目将直接有利于开发新的紧凑，轻便和更高可靠性的电力电子设备。此外，该项目的成功完成可能会降低运营成本、降低能源消耗、提高效率和减少碳足迹。最后，通过建立初创公司或技术转让协议，以及对学生和博士后进行创新和创业培训，成功实现技术商业化，将有助于在电力电子领域的全球领导地位，当前用于功率电子器件的热管理的方法由于使用散热器/散热器从器件的背面或衬底侧的热提取而受到限制。导热性差的界面材料。该项目通过将一种基于金刚石材料的新技术商业化来解决这一技术问题，该技术直接从产生热量的电力电子设备顶部提取热量。该方法是基于使用金刚石膜，因为它是非常适合于热管理，因为它的高导热性和电阻率。直接从器件顶部提取热量可以将效率提高40%，并减少封装尺寸和重量。 从顶部提取热量还提供了更高的效率和更低的运营成本，同时增加了器件的寿命和密度。该项目的另一个目标是通过国家科学基金会的I-Corps团队培训对劳动力进行技术商业化和创业培训，在该培训中，从事该项目的教师（技术领导）、导师和企业家领导（博士后和/或学生）接受了如何成功地将这一有前途的技术商业化的强化培训。这项新技术可能会带来更高效的电力电子产品、更低的运营成本、更长的器件寿命和密度，以及成功的技术商业化和创业精神。该奖项反映了NSF的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Influence of processing conditions on the titanium–aluminum contact metallization on a silicon wafer for thermal management

加工条件对硅片上钛铝接触金属化热管理的影响

• 发表时间: 2023
• 期刊: Journal of vacuum science technology B Microelectronics and nanometer structures
• 作者: Manish Singh, Manish;Ramasubramanian, Lakshmi Narayanan;Singh, Raj N
• 通讯作者: Singh, Raj N