A New Approach to Silicon/Compound Semiconductor Integration

硅/化合物半导体集成的新方法

• 批准号: 0901297
• 负责人: Ioannis Kymissis
• 金额: $ 33万
• 依托单位: Columbia University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-08-15 至 2012-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0901297&HistoricalAwards=false
• 关键词: New; Approach; Silicon; Compound; Semiconductor

This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5). The objective of this research is to develop a process which integrates high performance thin film silicon circuitry with compound semiconductor devices, and to use this process to demonstrate an active matrix light emitting diode capable of projecting a videobrightness image. The approach is to start with high qualitycompound semiconductor wafers, and then deposit and recrystallize the silicon circuitry using low temperature deposition and a laser annealing process known as sequential lateral solidification. This process produces thin film silicon transistors with high mobility and minimal thermal load to the substrate.Compound semiconductor materials are favored for a number of optoelectronic applications including photodetectors for visible, IR, and UV; light emitting diodes; and lasers. The materials used in these applications, however, generally do not form transistors and cannot be used for switching or local amplification. The approach presented in this proposal reverses the usual heteroepitaxy strategy, in which compound semiconductors are grown on a silicon wafer, and instead fabricates silicon devices on a compound semiconductor wafer. This allows integration of high quality compound semiconductor materials with silicon circuitry for switching and amplification, avoiding the limitations of other approaches.The technology developed has a range of applications including energy efficient displays, lithography, hyperspectral detection, communication systems, and miniature biological sensors. In addition to training a graduate student, the program will mentor a high school student and an undergraduate working on the project. Light emitting diode wafer materials will be used for high school demonstrations and a course on display devices.

该奖项是根据2009年美国复苏和再投资法案（公法111-5）资助的。本研究的目的是开发一种将高性能薄膜硅电路与化合物半导体器件集成的工艺，并利用该工艺演示一种能够投影视频亮度图像的有源矩阵发光二极管。 该方法是从高质量的化合物半导体晶片开始，然后使用低温沉积和称为连续横向固化的激光退火工艺存款并再结晶硅电路。 这种工艺生产的薄膜硅晶体管具有高迁移率和对衬底的最小热负荷。化合物半导体材料在许多光电应用中受到青睐，包括可见光、红外和紫外光探测器;发光二极管;和激光器。然而，在这些应用中使用的材料通常不形成晶体管，并且不能用于开关或局部放大。该提案中提出的方法逆转了通常的异质外延策略，其中化合物半导体在硅晶片上生长，而是在化合物半导体晶片上制造硅器件。 这使得高质量化合物半导体材料与用于开关和放大的硅电路集成，避免了其他方法的限制。开发的技术具有一系列应用，包括节能显示器、光刻、高光谱检测、通信系统和微型生物传感器。 除了培训一名研究生外，该项目还将指导一名高中生和一名从事该项目的本科生。 发光二极管晶片材料将用于高中演示和显示设备课程。