Scalable Synthesis and Metrology of Epitaxial Graphene on SiC

SiC 上外延石墨烯的可扩展合成和计量

• 批准号: 0926212
• 负责人: Alberto Salleo
• 金额: $ 38万
• 依托单位: Stanford University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-07-15 至 2012-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0926212&HistoricalAwards=false
• 关键词: Scalable; Synthesis; Metrology; Epitaxial; Graphene

Graphene, a single-atom-think layer of graphite, has exceptional electronic qualities, such as the ability to carry charge at great speed, that make this new nanomaterial attractive for the next generation of electronic devices. Synthesizing and characterizing such ultra-thin material however is especially challenging. Laser irradiation of a single-crystal of silicon carbide (SiC) is proposed as a graphene synthesis method. Laser light absorption causes the decomposition of the SiC and selective evaporation of silicon leaving a graphene layer on the surface. Using the x-ray beam at the Stanford Synchrotron source crystalline perfection and orientation of the laser-synthesized graphene layer will be investigated. Furthermore, bonding defects of the graphene layer will be investigated spectroscopically. Finally, one-step synthesis and patterning will be demonstrated by masking parts of the laser beam during irradiation.The societal benefits of having a graphene synthesis method that can be scaled to large wafers, similarly to silicon, would be very significant. Indeed, making large areas of graphene suitable for the fabrication of devices is one of the main challenges to the development of this material. Furthermore, students working on the project would be trained in the Materials Science of a novel material that is likely to play a role in the next generation of advanced electronic devices. Outreach activities are also planned through the summer institute for middle-school teachers at the Stanford-based NSF center for probing the nanoscale and through the development of hands-on activities that can be exported into a classroom environment.

石墨烯是一种单原子石墨层，具有特殊的电子特性，例如能够以极快的速度携带电荷，这使得这种新的纳米材料对下一代电子设备具有吸引力。然而，这种超薄材料的合成和表征尤其具有挑战性。提出了激光辐照单晶碳化硅（SiC）合成石墨烯的方法。激光吸收引起SiC的分解和硅的选择性蒸发，在表面留下石墨烯层。利用斯坦福同步加速器源的x射线束，将研究激光合成石墨烯层的结晶完美性和取向性。此外，还将对石墨烯层的键合缺陷进行光谱研究。最后，一步合成和图像化将演示在照射过程中遮盖部分激光束。石墨烯合成方法的社会效益是非常显著的，这种方法可以像硅一样扩展到更大的晶圆。事实上，使大面积的石墨烯适合于器件的制造是这种材料发展的主要挑战之一。此外，参与该项目的学生将接受材料科学方面的培训，学习一种可能在下一代先进电子设备中发挥作用的新型材料。此外，还计划通过斯坦福国家科学基金会中心为中学教师举办的暑期学院开展推广活动，以探索纳米尺度，并通过开发可导出到课堂环境的动手活动。