Short channel OFETs for the application in circuitry

短沟道 OFET 在电路中的应用

• 批准号: 195610266
• 负责人: Professor Dr.-Ing. Joachim N. Burghartz
• 金额: --
• 依托单位: Max-Planck-Institut für Festkörperforschung (MPI-FKF)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2011
• 资助国家: 德国
• 起止时间: 2010-12-31 至 2014-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/195610266?language=en
• 关键词: Short; channel; OFETs; application; circuitry

The main objective of the project is the optimization of organic field effect transistors (OFET) with short channel length for the application in circuitries designed in this project. The main focus of the experimental works are the preparation of a very thin insulating layer. Furthermore, the channel length and the overlap of the source-gate and drain gate contacts have to be optimized. The S/D contacts will be evaporated throuhg a Stencil-mask, also designed and prepared during the project. The theoretical work is focused on the numerical simulation of the devices to investigate the influence of short channel effects on the device behavior. In addition, the influence of the contact overlap on the cutoff frequency and capacitances of the OFET will be described. The applicability of the prepared OFETs will be tested in simple circuits as ring ocillator or analog digital converter and digital analog converter. For this purpose a OFET_Spice model should be applied and optimized.

本计画的主要目的是针对本计画所设计的电路中所应用的短沟道有机场效电晶体进行最佳化。实验工作的主要焦点是制备非常薄的绝缘层。此外，必须优化沟道长度以及源极-栅极和漏极-栅极接触的重叠。S/D触点将通过模板掩模进行蒸发，模板掩模也是在项目期间设计和制备的。理论工作的重点是对器件进行数值模拟，研究短沟道效应对器件行为的影响。此外，将描述接触重叠对OFET的截止频率和电容的影响。所制备的OFFERS可用于环形振荡器或模数转换器和数模转换器等简单电路中。为此，应应用并优化OFET_Spice模型。

项目成果

Accurate Capacitance Modeling and Characterization of Organic Thin-Film Transistors

• DOI: 10.1109/ted.2013.2292390
• 发表时间: 2014-01-01
• 期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
• 影响因子: 3.1
• 作者: Zaki, Tarek;Scheinert, Susanne;Burghartz, Joachim N.
• 通讯作者: Burghartz, Joachim N.

Numerical analysis of capacitance compact models for organic thin-film transistors

有机薄膜晶体管电容紧凑模型的数值分析

• DOI: 10.1016/j.orgel.2014.04.013
• 发表时间: 2014
• 期刊: Organic Electronics
• 影响因子: 3.2
• 作者: S. Scheinert;T. Zaki;R. Rödel;I. Hörselmann;H. Klauk;J. N. Burghartz
• 通讯作者: J. N. Burghartz