Short channel OFETs for the application in circuitry

该项目的主要目标是优化具有短沟道长度的有机场效应晶体管(OFET)，以便在该项目所设计的电路中应用。实验工作的重点是制备一层非常薄的绝缘层。此外，必须优化沟道长度以及源极-栅极和漏极触点的重叠。S/D触点将通过一个模板面具蒸发，该模板面具也是在项目期间设计和准备的。理论工作主要集中在器件的数值模拟上，以考察短沟效应对器件行为的影响。此外，还将描述接触重叠对OFET截止频率和电容的影响。制备的OFET的适用性将在简单的电路中进行测试，如环形振荡器或模拟数字转换器和数字模拟转换器。为此，应应用和优化OFET_SPICE模型。

The main objective of the project is the optimization of organic field effect transistors (OFET) with short channel length for the application in circuitries designed in this project. The main focus of the experimental works are the preparation of a very thin insulating layer. Furthermore, the channel length and the overlap of the source-gate and drain gate contacts have to be optimized. The S/D contacts will be evaporated throuhg a Stencil-mask, also designed and prepared during the project. The theoretical work is focused on the numerical simulation of the devices to investigate the influence of short channel effects on the device behavior. In addition, the influence of the contact overlap on the cutoff frequency and capacitances of the OFET will be described. The applicability of the prepared OFETs will be tested in simple circuits as ring ocillator or analog digital converter and digital analog converter. For this purpose a OFET_Spice model should be applied and optimized.