Investigation of the influence of surface treatments on amorphous zinc oxide films, processed at temperatures around 120°C, to control the transport energy levels and charge transport properties (e.g. switch n- to p-type) for the application in photovolta

该项目的目的是分析和评估非晶态氧化锌(a-氧化锌)和其他表面管理的氧化锌层，这些氧化锌层在120°C左右加工，作为光伏、电致发光和晶体管器件的可调构建块。这项研究将涵盖以下问题：-分析由氨基前驱体溶液构建的本征掺氮a-ZnO薄膜的传输能级-通过渗透和组装与电子供体和接受有机吸附物进行后处理。分析了在硫阴离子取代的a-氧化锌中在隔离、半导体和导电氮p掺杂之间切换薄膜性质的可能性，涉及以下问题：-用硫钝化a-氧化锌表面以最小化表面态的高密度(与晶体氧化锌(c-氧化锌)相比)-受主向间隙位置的迁移和受主自补偿的影响，A-氧化锌与c-氧化锌--掺杂在a-氧化锌中的溶解度(比较c-氧化锌)--a-氧化锌与c-氧化锌相比的受主激活能和c-氧化锌中的位错--使用定制的a-氧化锌层的电致发光、光伏和晶体管器件的制备和表征。

Aim of the project is the analysis and evaluation of amorphous ZnO (a-ZnO) and other surface governed ZnO layers, processed at temperatures around 120°C, as a tunable building block in photovoltaic-, electroluminescence-, and transistor devices. The research will cover the following issues:- Analysis of the transport energy levels in intrinsically n-doped a-ZnO thin films, build from ammonium based precursor solution- Post treatment via infiltration and assembling with electron donating and accepting organic adsorbates. Analysis of the possibilities in switching the film properties between isolating, semiconducting, and conducting- Nitrogen p-doping in sulfur anionic substituted a-ZnO with respect to the following issues:-- Passivation of the a-ZnO surface with sulfur to minimize the high density of surface states (comparison to crystalline ZnO (c-ZnO))-- Influence of acceptor migration to the interstitial position and acceptor self compensation, respectively: a-ZnO vs. c-ZnO-- Solubility of the dopant in a-ZnO (comparison c-ZnO)-- Acceptor activation energies in a-ZnO:ZnS in comparison to c-ZnO and dislocations in c-ZnO- Fabrication and characterization of electroluminescent-, photovoltaic, and transistor devices using the tailored a-ZnO layers.