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Investigation of the influence of surface treatments on amorphous zinc oxide films, processed at temperatures around 120°C, to control the transport energy levels and charge transport properties (e.g. switch n- to p-type) for the application in photovolta

研究表面处理对在 120°C 左右温度下处理的非晶氧化锌薄膜的影响，以控制光伏应用中的传输能级和电荷传输特性（例如，将 n 型转换为 p 型）

基本信息

批准号：
196921392
负责人：
Dr. Simon Bubel
金额：
--
依托单位：
Fachgebiet Nanostrukturtechnik
依托单位国家：
德国
项目类别：
Research Fellowships
财政年份：
2011
资助国家：
德国
起止时间：
2010-12-31 至 2013-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/196921392?language=en
关键词：
Investigation influence surface treatments amorphous

项目摘要

Aim of the project is the analysis and evaluation of amorphous ZnO (a-ZnO) and other surface governed ZnO layers, processed at temperatures around 120°C, as a tunable building block in photovoltaic-, electroluminescence-, and transistor devices. The research will cover the following issues:- Analysis of the transport energy levels in intrinsically n-doped a-ZnO thin films, build from ammonium based precursor solution- Post treatment via infiltration and assembling with electron donating and accepting organic adsorbates. Analysis of the possibilities in switching the film properties between isolating, semiconducting, and conducting- Nitrogen p-doping in sulfur anionic substituted a-ZnO with respect to the following issues:-- Passivation of the a-ZnO surface with sulfur to minimize the high density of surface states (comparison to crystalline ZnO (c-ZnO))-- Influence of acceptor migration to the interstitial position and acceptor self compensation, respectively: a-ZnO vs. c-ZnO-- Solubility of the dopant in a-ZnO (comparison c-ZnO)-- Acceptor activation energies in a-ZnO:ZnS in comparison to c-ZnO and dislocations in c-ZnO- Fabrication and characterization of electroluminescent-, photovoltaic, and transistor devices using the tailored a-ZnO layers.

该项目的目的是分析和评估非晶ZnO（a-ZnO）和其他表面控制的ZnO层，在120°C左右的温度下加工，作为光伏，电致发光和晶体管器件中的可调构件。本研究将涵盖以下问题：-在本质上n掺杂的a-ZnO薄膜的传输能级的分析，建立从铵基前体溶液-后处理通过渗透和组装与电子给予和接受有机吸附物。在绝缘、半导体和导电之间切换膜性质的可能性的分析-关于以下问题的硫阴离子取代的a-ZnO中的氮p掺杂：-用硫钝化a-ZnO表面以使表面态的高密度最小化（与晶体ZnO（c-ZnO）的比较）--受主迁移到间隙位置和受主自补偿的影响，分别为：a-ZnO与c-ZnO--掺杂剂在a-ZnO中的溶解度（比较c-ZnO）--a-ZnO：ZnS中的受主激活能与c-ZnO的比较以及c-ZnO中的位错--使用定制的a-ZnO层制造和表征电致发光、光伏和晶体管器件。